MUN2111T1 ON Semiconductor, MUN2111T1 Datasheet

TRANS BRT PNP 100MA 50V SC59

MUN2111T1

Manufacturer Part Number
MUN2111T1
Description
TRANS BRT PNP 100MA 50V SC59
Manufacturer
ON Semiconductor
Datasheet

Specifications of MUN2111T1

Transistor Type
PNP - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
10K
Resistor - Emitter Base (r2) (ohms)
10K
Dc Current Gain (hfe) (min) @ Ic, Vce
35 @ 5mA, 10V
Vce Saturation (max) @ Ib, Ic
250mV @ 300µA, 10mA
Current - Collector Cutoff (max)
500nA
Power - Max
230mW
Mounting Type
Surface Mount
Package / Case
SC-59-3, SMT3, SOT-346, TO-236
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
MUN2111T1OSCT

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MUN2111T1 Series
Bias Resistor Transistors
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
d e v i c e a n d i t s e x t e r n a l r e s i s t o r b i a s n e t w o r k . T h e
Bias Resistor Transistor (BRT) contains a single transistor with a
monolithic bias network consisting of two resistors; a series base
resistor and a base−emitter resistor. The BRT eliminates these
individual components by integrating them into a single device. The
use of a BRT can reduce both system cost and board space. The device
is housed in the SC−59 package which is designed for low power
surface mount applications.
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 x 1.0 inch Pad.
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2006
September, 2006 − Rev. 17
THERMAL CHARACTERISTICS
Collector − Base Voltage
Collector − Emitter Voltage
Collector Current
Total Device Dissipation
T
Derate above 25°C
Thermal Resistance,
Thermal Resistance,
Junction and Storage Temperature
Range
This new series of digital transistors is designed to replace a single
A
Soldering Eliminating the Possibility of Damage to the Die
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Moisture Sensitivity Level: 1
ESD Rating − Human Body Model: Class 1
The SC−59 Package Can be Soldered Using Wave or Reflow
The Modified Gull−Winged Leads Absorb Thermal Stress During
Pb−Free Packages are Available
= 25°C
Junction−to−Ambient
Junction−to−Lead
Characteristic
Rating
− Machine Model: Class B
(T
A
= 25°C unless otherwise noted)
Preferred Devices
Symbol
Symbol
T
V
V
R
R
J
P
, T
CBO
CEO
I
qJA
qJL
C
D
stg
230 (Note 1)
338 (Note 2)
540 (Note 1)
370 (Note 2)
264 (Note 1)
287 (Note 2)
1.8 (Note 1)
2.7 (Note 2)
−55 to +150
Value
Max
100
50
50
1
mAdc
°C/W
°C/W
°C/W
Unit
Unit
Vdc
Vdc
mW
°C
See detailed ordering and shipping information on page 2 of
this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
See device marking table on page 2 of this data sheet.
*Date Code orientation may vary depending
upon manufacturing location.
(Note: Microdot may be in either location)
DEVICE MARKING INFORMATION
PIN 2
BASE
(INPUT)
6x
M
G
ORDERING INFORMATION
MARKING DIAGRAM
http://onsemi.com
R1
R2
= Specific Device Code
= Date Code*
= Pb−Free Package
CASE 318D
PLASTIC
2
SC−59
6x M G
Publication Order Number:
G
1
PIN 1
EMITTER
(GROUND)
3
PIN 3
COLLECTOR
(OUTPUT)
1
MUN2111T1/D

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MUN2111T1 Summary of contents

Page 1

... MUN2111T1 Series Preferred Devices Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base− ...

Page 2

... MUN2140T1 (Note 3) MUN2140T1G (Note 3) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 3. New resistor combinations. Updated curves to follow in subsequent data sheets. MUN2111T1 Series Package Marking R1 (K) SC−59 ...

Page 3

... Output Voltage ( 1 1 1 1.0 kW Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%. MUN2111T1 Series = 25°C unless otherwise noted) A Symbol = CBO = CEO MUN2111T1 I EBO MUN2112T1 MUN2113T1 MUN2114T1 MUN2115T1 MUN2116T1 MUN2130T1 MUN2131T1 MUN2132T1 MUN2133T1 MUN2134T1 MUN2136T1 MUN2137T1 MUN2140T1 ...

Page 4

... Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%. 350 300 250 200 150 R = 370°C/W qJA 100 50 0 − AMBIENT TEMPERATURE (5°C) A Figure 1. Derating Curve MUN2111T1 Series (T = 25°C unless otherwise noted) A Symbol V OH MUN2111T1 MUN2112T1 MUN2113T1 MUN2114T1 MUN2133T1 MUN2134T1 MUN2136T1 MUN2137T1 MUN2130T1 MUN2115T1 MUN2116T1 MUN2131T1 ...

Page 5

... TYPICAL ELECTRICAL CHARACTERISTICS − MUN2111T1 −2°5C A 0.1 0. COLLECTOR CURRENT (mA) C Figure 3. V vs. I CE(sat REVERSE BIAS VOLTAGE (VOLTS) R Figure 5. Output Capacitance 100 0.1 0 Figure 7. Input Voltage vs. Output Current MUN2111T1 Series 1000 25°C 75°C 100 100 75° MHz 25° 0.1 0.01 ...

Page 6

... TYPICAL ELECTRICAL CHARACTERISTICS − MUN2112T1 0.1 0. COLLECTOR CURRENT (mA) C Figure 8. V vs. I CE(sat REVERSE BIAS VOLTAGE (VOLTS) R Figure 10. Output Capacitance 100 10 1 0.1 0 MUN2111T1 Series 1000 T = −25°C A 25°C 75°C 100 100 75° MHz 25° 0.1 0.01 0.001 Figure 11. Output Current vs. Input Voltage − ...

Page 7

... A 0.1 0. COLLECTOR CURRENT (mA) C Figure 13. V CE(sat) 1 0.8 0.6 0.4 0 REVERSE BIAS VOLTAGE (VOLTS) R Figure 15. Output Capacitance 100 10 1 0.1 0 MUN2111T1 Series 1000 25°C 75°C 100 vs 100 MHz 25° 0.1 0.01 0.001 Figure 16. Output Current vs. Input Voltage T = −25°C 25° ...

Page 8

... I , COLLECTOR CURRENT (mA) C Figure 18. V CE(sat) 4.5 4 3.5 3 2.5 2 1 REVERSE BIAS VOLTAGE (VOLTS) R Figure 20. Output Capacitance 10 1 0.1 0 Figure 22. Input Voltage vs. Output Current MUN2111T1 Series 180 160 CE 140 25°C 120 75°C 100 vs 100 MHz 25° INPUT VOLTAGE (VOLTS) in Figure 21 ...

Page 9

... I , COLLECTOR CURRENT (mA) C Figure 23. V vs. I CE(sat REVERSE BIAS VOLTAGE (V) R, Figure 25. Output Capacitance 10 1 0.1 0 Figure 27. Input Voltage vs. Output Current MUN2111T1 Series 1000 100 25°C 75° Figure 24. DC Current Gain C 100 75° MHz 25° 0.01 0. Figure 26. Output Current vs. Input Voltage T = − ...

Page 10

... I , COLLECTOR CURRENT (mA) C Figure 28. V versus I CE(sat REVERSE BIAS VOLTAGE (VOLTS) R Figure 30. Output Capacitance 75°C 0.1 0 Figure 32. Input Voltage versus Output Current MUN2111T1 Series 1000 75°C 100 25° 100 75° MHz 25° 0 −25°C A 0.01 0.001 Figure 31. Output Current versus Input Voltage = − ...

Page 11

... I , COLLECTOR CURRENT (mA) C Figure 33. Maximum Collector Voltage vs. Collector Current 1.2 1.0 0.8 0.6 0.4 0 REVERSE BIAS VOLTAGE (VOLTS) R Figure 35. Output Capacitance 100 25° Figure 37. Input Voltage vs. Output Current MUN2111T1 Series 1000 100 75°C 25° 100 MHz 25° 0 Figure 36. Output Current vs. Input Voltage T = − ...

Page 12

... COLLECTOR CURRENT (mA) C Figure 38. Maximum Collector Voltage vs. Collector Current 1.4 1.2 1.0 0.8 0.6 0.4 0 REVERSE BIAS VOLTAGE (VOLTS) R Figure 40. Output Capacitance 100 10 25° Figure 42. Input Voltage vs. Output Current MUN2111T1 Series 1000 75°C 100 Figure 39. DC Current Gain 100 MHz 25° ...

Page 13

... Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com MUN2111T1 Series PACKAGE DIMENSIONS SC−59 CASE 318D−04 ISSUE G NOTES: 1 ...

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