MUN2211T1 ON Semiconductor, MUN2211T1 Datasheet

TRANS BRT NPN 100MA 50V SC59

MUN2211T1

Manufacturer Part Number
MUN2211T1
Description
TRANS BRT NPN 100MA 50V SC59
Manufacturer
ON Semiconductor
Datasheet

Specifications of MUN2211T1

Transistor Type
NPN - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
10K
Resistor - Emitter Base (r2) (ohms)
10K
Dc Current Gain (hfe) (min) @ Ic, Vce
35 @ 5mA, 10V
Vce Saturation (max) @ Ib, Ic
250mV @ 300µA, 10mA
Current - Collector Cutoff (max)
500nA
Power - Max
338mW
Mounting Type
Surface Mount
Package / Case
SC-59-3, SMT3, SOT-346, TO-236
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
MUN2211T1OSCT

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MUN2211T1 Series
Bias Resistor Transistors
NPN Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base-emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the
SC-59 package which is designed for low power surface
mount applications.
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR-4 @ Minimum Pad.
2. FR-4 @ 1.0 x 1.0 inch Pad.
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2007
July, 2007 - Rev. 13
THERMAL CHARACTERISTICS
Collector‐Base Voltage
Collector‐Emitter Voltage
Collector Current
Total Device Dissipation
T
Derate above 25°C
Thermal Resistance, Junction‐to‐Ambient
Thermal Resistance, Junction‐to‐Lead
Junction and Storage Temperature
Range
This new series of digital transistors is designed to replace a single
A
Soldering Eliminating the Possibility of Damage to the Die
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Moisture Sensitivity Level: 1
ESD Rating - Human Body Model: Class 1
The SC-59 Package can be Soldered Using Wave or Reflow
The Modified Gull-Winged Leads Absorb Thermal Stress During
Pb-Free Packages are Available
= 25°C
Characteristic
Rating
- Machine Model: Class B
(T
A
= 25°C unless otherwise noted)
Preferred Devices
Symbol
Symbol
T
V
V
R
R
J
P
, T
CBO
CEO
I
qJA
qJL
C
D
stg
230 (Note 1)
338 (Note 2)
540 (Note 1)
370 (Note 2)
264 (Note 1)
287 (Note 2)
1.8 (Note 1)
2.7 (Note 2)
- 55 to +150
Value
Max
100
50
50
1
mAdc
°C/W
°C/W
°C/W
Unit
Unit
Vdc
Vdc
mW
°C
See detailed ordering and shipping information in the table on
page 2 of this data sheet.
See specific marking information in the Device Marking and
Resistor Values table on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
(INPUT)
*Date Code orientation may vary depending
(Note: Microdot may be in either location)
DEVICE MARKING INFORMATION
BASE
upon manufacturing location.
8x
M
G
PIN 2
2
ORDERING INFORMATION
= Device Code (Refer to page 2)
= Date Code*
= Pb-Free Package
1
BIAS RESISTOR
MARKING DIAGRAM
TRANSISTORS
http://onsemi.com
NPN SILICON
3
R
R
2
1
8x M G
G
Publication Order Number:
CASE 318D
STYLE 1
SC-59
1
PIN 1
EMITTER
(GROUND)
PIN 3
COLLECTOR
(OUTPUT)
MUN2211T1/D

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MUN2211T1 Summary of contents

Page 1

... MUN2211T1 Series Preferred Devices Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors ...

Page 2

... MUN2241T1 (Note 3) SC-59 MUN2241T1G (Note 3) SC-59 (Pb-Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 3. New devices. Updated curves to follow in subsequent data sheets. MUN2211T1 Series Marking R1 ( ...

Page 3

... V E (BR)CBO V (BR)CEO MUN2211T1 MUN2212T1, G MUN2213T1, G MUN2214T1, G MUN2215T1, G MUN2216T1, G MUN2230T1, G MUN2231T1, G MUN2232T1, G MUN2233T1, G MUN2234T1, G MUN2236T1, G MUN2237T1, G MUN2240T1, G MUN2241T1 CE(sat) MUN2211T1, G MUN2212T1, G MUN2213T1, G MUN2214T1, G MUN2233T1, G MUN2236T1, G MUN2230T1, G MUN2231T1, G MUN2237T1, G MUN2241T1, G MUN2215T1, G MUN2216T1, G MUN2232T1, G MUN2234T1, G MUN2240T1, G http://onsemi.com 3 Min Typ Max Unit - - 100 ...

Page 4

... MUN2231T1, G MUN2232T1, G MUN2236T1, G MUN2237T1, G MUN2240T1, G MUN2241T1, G MUN2211T1 MUN2212T1, G MUN2213T1, G MUN2214T1, G MUN2215T1, G MUN2216T1, G MUN2230T1, G MUN2231T1, G MUN2232T1, G MUN2233T1, G MUN2234T1, G MUN2236T1, G MUN2237T1, G MUN2240T1, G MUN2241T1, G MUN2211T1 MUN2212T1, G MUN2213T1, G MUN2214T1, G MUN2215T1, G MUN2216T1, G MUN2230T1, G MUN2231T1, G MUN2232T1, G MUN2233T1, G MUN2234T1, G MUN2236T1, G MUN2237T1, G MUN2240T1, G MUN2241T1, G http://onsemi.com 4 Min Typ Max ...

Page 5

... MUN2211T1 Series 350 300 250 200 150 100 R = 370°C/W 50 qJA AMBIENT TEMPERATURE (°C) A Figure 1. Derating Curve http://onsemi.com 5 100 150 ...

Page 6

... TYPICAL ELECTRICAL CHARACTERISTICS - MUN2211T1 0.1 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 2. V versus I CE(sat REVERSE BIAS VOLTAGE (VOLTS) R Figure 4. Output Capacitance 0 0.1 0 Figure 6. Input Voltage versus Output Current MUN2211T1 Series 1000 T = -25°C A 25°C 75°C 100 Figure 3. DC Current Gain ...

Page 7

... I , COLLECTOR CURRENT (mA) C Figure 7. V versus I CE(sat REVERSE BIAS VOLTAGE (VOLTS) R Figure 9. Output Capacitance 100 0.1 0 Figure 11. Input Voltage versus Output Current MUN2211T1 Series 1000 T = -25°C A 25°C 75°C 100 100 MHz 25° 0.1 0.01 0.001 Figure 10. Output Current versus Input Voltage = 0 ...

Page 8

... COLLECTOR CURRENT (mA) C Figure 12. V versus I CE(sat) 1 0.8 0.6 0.4 0 REVERSE BIAS VOLTAGE (VOLTS) R Figure 14. Output Capacitance 100 0.1 0 Figure 16. Input Voltage versus Output Current MUN2211T1 Series 1000 75°C 100 100 MHz 25° 0.1 0.01 0.001 Figure 15. Output Current versus Input Voltage = 0 ...

Page 9

... I , COLLECTOR CURRENT (mA) C Figure 17. V versus I CE(sat) 4 3.5 3 2.5 2 1 REVERSE BIAS VOLTAGE (VOLTS) R Figure 19. Output Capacitance 0.1 0 Figure 21. Input Voltage versus Output Current MUN2211T1 Series 300 T = -25° 250 25°C 200 75°C 150 100 100 MHz 25° Figure 20. Output Current versus Input Voltage T = -25° ...

Page 10

... COLLECTOR CURRENT (mA) C Figure 22. V versus I CE(sat) 4.5 4 3.5 3 2.5 2 1 REVERSE BIAS VOLTAGE (VOLTS) R Figure 24. Output Capacitance 75°C 0.1 0 Figure 26. Input Voltage versus Output Current MUN2211T1 Series 1000 T = -25°C 75°C A 100 100 75° MHz 25° 0.1 0.01 0.001 Figure 25 ...

Page 11

... COLLECTOR CURRENT (mA) C Figure 27. V versus I CE(sat) 4.5 4 3.5 3 2.5 2 1 REVERSE BIAS VOLTAGE (VOLTS) R Figure 29. Output Capacitance 75°C 0.1 0 Figure 31. Input Voltage versus Output Current MUN2211T1 Series 1000 T = -25°C A 75°C 100 100 75° MHz 25° 0.1 0.01 0.001 Figure 30 ...

Page 12

... C Figure 32. V versus I CE(sat) 4.5 4 3.5 3 2.5 2 1 REVERSE BIAS VOLTAGE (VOLTS) R Figure 34. Output Capacitance 10 1 0.1 0 Figure 36. Input Voltage versus Output Current MUN2211T1 Series 100 75° 100 75° MHz 25° 0.1 0.01 0.001 Figure 35. Output Current versus Input Voltage T = -25° ...

Page 13

... COLLECTOR CURRENT (mA) C Figure 37. V versus I CE(sat REVERSE BIAS VOLTAGE (VOLTS) R Figure 39. Output Capacitance 75°C 0.1 0 Figure 41. Input Voltage versus Output Current MUN2211T1 Series 1000 100 100 MHz 75° 25° 0.1 0.01 0.001 Figure 40. Output Current versus Input Voltage = -25°C 25° ...

Page 14

... I , COLLECTOR CURRENT (mA) C Figure 42. V versus I CE(sat) 4 3.5 3 2.5 2 1 REVERSE BIAS VOLTAGE (VOLTS) R Figure 44. Output Capacitance 10 1 75°C 0.1 0 Figure 46. Input Voltage versus Output Current MUN2211T1 Series 1000 100 75° 100 75° MHz 25° -25°C A 0.1 0.01 0.001 Figure 45. Output Current versus Input Voltage T = -25° ...

Page 15

... C Figure 47. V versus I CE(sat) 5 4.5 4 3.5 3 2.5 2 1 REVERSE BIAS VOLTAGE (VOLTS) R Figure 49. Output Capacitance 100 0.1 0 Figure 51. Input Voltage versus Output Current MUN2211T1 Series 1000 25°C 75°C 100 0.1 C 100 MHz 25° 0 Figure 50. Output Current versus Input Voltage 25° ...

Page 16

... I , COLLECTOR CURRENT (mA) C Figure 52. V versus I CE(sat) 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0 REVERSE BIAS VOLTAGE (VOLTS) R Figure 54. Output Capacitance 100 Figure 56. Input Voltage versus Output Current MUN2211T1 Series 1000 25°C 100 75° 100 MHz 0. 25°C A 0.001 Figure 55. Output Current versus Input Voltage = 0 ...

Page 17

... MUN2211T1 Series TYPICAL APPLICATIONS FOR NPN BRTs +12 V FROM mP OR OTHER LOGIC Figure 57. Level Shifter: Connects Volt Circuits to Logic V CC OUT IN Figure 58. Open Collector Inverter: Inverts the Input Signal Figure 59. Inexpensive, Unregulated Current Source http://onsemi.com 17 ISOLATED LOAD +12 V LOAD ...

Page 18

... PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT:  Literature Distribution Center for ON Semiconductor  P.O. Box 5163, Denver, Colorado 80217 USA  Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada  Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada  Email: orderlit@onsemi.com MUN2211T1 Series PACKAGE DIMENSIONS SC-59 CASE 318D-04 ISSUE G NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14 ...

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