MMUN2241LT1 ON Semiconductor, MMUN2241LT1 Datasheet

TRANS PREBIASED NPN 50V SOT23

MMUN2241LT1

Manufacturer Part Number
MMUN2241LT1
Description
TRANS PREBIASED NPN 50V SOT23
Manufacturer
ON Semiconductor
Datasheet
1.MMUN2211LT3G.pdf (18 pages)

Specifications of MMUN2241LT1

Transistor Type
NPN - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
100K
Dc Current Gain (hfe) (min) @ Ic, Vce
160 @ 5mA, 10V
Vce Saturation (max) @ Ib, Ic
250mV @ 5mA, 10mA
Current - Collector Cutoff (max)
500nA
Power - Max
246mW
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
MMUN2241LT1OS

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
MMUN2241LT1
Manufacturer:
ON
Quantity:
2 549
MMUN2211LT1G Series
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base-emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the
SOT-23 package which is designed for low power surface mount
applications.
Features
•
•
•
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ minimum pad
2. FR−4 @ 1.0 x 1.0 inch pad
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2010
October, 2010 − Rev. 11
THERMAL CHARACTERISTICS
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Total Device Dissipation
T
Derate above 25°C
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Lead
Junction and Storage Temperature
Range
This new series of digital transistors is designed to replace a single
A
Compliant
Simplifies Circuit Design
Reduces Board Space and Component Count
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
= 25°C
Characteristic
Rating
(T
A
= 25°C unless otherwise noted)
Symbol
Symbol
T
V
V
R
R
J
P
CBO
CEO
, T
I
qJA
qJL
C
D
stg
246 (Note 1)
400 (Note 2)
508 (Note 1)
311 (Note 2)
174 (Note 1)
208 (Note 2)
−55 to +150
1.5 (Note 1)
2.0 (Note 2)
Value
Max
100
50
50
mAdc
°C/W
°C/W
°C/W
Unit
Unit
Vdc
Vdc
mW
°C
See detailed ordering and shipping information in the package
dimensions section on page 17 of this data sheet.
*Date Code orientation and/or overbar may
(INPUT)
vary depending upon manufacturing location.
CASE 318
(Note: Microdot may be in either location)
STYLE 6
BASE
SOT−23
PIN 1
ORDERING INFORMATION
A8x
M
G
http://onsemi.com
R1
R2
= Specific Device Code
= Date Code*
= Pb−Free Package
MARKING DIAGRAM
Publication Order Number:
1
MMUN2211LT1/D
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
A8x M G
G

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MMUN2241LT1 Summary of contents

Page 1

MMUN2211LT1G Series Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains ...

Page 2

... MMUN2230LT1G MMUN2231LT1G MMUN2232LT1G MMUN2233LT1G MMUN2234LT1G MMUN2238LT1G MMUN2241LT1G V CE(sat) MMUN2211LT1G MMUN2212LT1G MMUN2213LT1G MMUN2214LT1G MMUN2233LT1G MMUN2234LT1G MMUN2215LT1G MMUN2216LT1G MMUN2232LT1G MMUN2238LT1G MMUN2230LT1G MMUN2231LT1G MMUN2241LT1G http://onsemi.com 2 Min Typ Max Unit − − 100 nAdc − − 500 nAdc − − 0.5 mAdc − − ...

Page 3

... MMUN2230LT1G MMUN2231LT1G MMUN2232LT1G MMUN2233LT1G MMUN2234LT1G MMUN2238LT1G MMUN2241LT1G MMUN2211LT1G R1/R2 MMUN2212LT1G MMUN2213LT1G MMUN2214LT1G MMUN2215LT1G MMUN2216LT1G MMUN2230LT1G MMUN2231LT1G MMUN2232LT1G MMUN2233LT1G MMUN2234LT1G MMUN2238LT1G MMUN2241LT1G http://onsemi.com 3 Min Typ Max Unit Vdc − − 0.2 − − 0.2 − − 0.2 − − 0.2 − ...

Page 4

TYPICAL ELECTRICAL CHARACTERISTICS − MMUN2211LT1G 250 200 150 100 R = 625°C/W qJA 50 0 − AMBIENT TEMPERATURE (5°C) A Figure 1. Derating Curve 1000 100 COLLECTOR CURRENT (mA) C Figure ...

Page 5

TYPICAL ELECTRICAL CHARACTERISTICS − MMUN2212LT1G 0.1 0.01 − 0.001 COLLECTOR CURRENT (mA) C Figure 7. V CE(sat ...

Page 6

TYPICAL ELECTRICAL CHARACTERISTICS − MMUN2213LT1G −25° 25°C 1 0.1 0. COLLECTOR CURRENT (mA) C Figure 12. V CE(sat) 1 0.8 0.6 0.4 0 ...

Page 7

TYPICAL ELECTRICAL CHARACTERISTICS − MMUN2214LT1G 0.1 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 17. V CE(sat) 4 3.5 3 2.5 2 1 ...

Page 8

TYPICAL ELECTRICAL CHARACTERISTICS − MMUN2215LT1G 0.1 −25°C 25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 22. V versus I CE(sat) 4.5 4 3.5 3 2.5 2 1.5 ...

Page 9

TYPICAL ELECTRICAL CHARACTERISTICS — MMUN2216LT1G 0.1 −25°C 25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 27. V versus I CE(sat) 4.5 4 3.5 3 2.5 2 1.5 ...

Page 10

TYPICAL ELECTRICAL CHARACTERISTICS — MMUN2230LT1G 0.1 −25°C 25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 32. V versus I CE(sat) 4.5 4 3.5 3 2.5 2 1.5 ...

Page 11

TYPICAL ELECTRICAL CHARACTERISTICS — MMUN2231LT1G 0.1 −25°C 25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 37. V versus I CE(sat) 4.5 4 3.5 3 2.5 2 1.5 ...

Page 12

TYPICAL ELECTRICAL CHARACTERISTICS − MMUN2232LT1G = 75°C 0.1 A −25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 42. V CE(sat ...

Page 13

TYPICAL ELECTRICAL CHARACTERISTICS − MMUN2233LT1G 0.1 75° −25°C A 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 47. V CE(sat) 4 3.5 3 2.5 2 1.5 ...

Page 14

TYPICAL ELECTRICAL CHARACTERISTICS — MMUN2234LT1G 0.1 75°C −25°C 25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 52. V versus I CE(sat) TBD V , REVERSE BIAS VOLTAGE ...

Page 15

TYPICAL ELECTRICAL CHARACTERISTICS − MMUN2238LT1G 0.1 75°C 25° −25°C A 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 57. V CE(sat) 4 3.5 3 2.5 2 ...

Page 16

TYPICAL APPLICATIONS FOR NPN BRTs FROM mP OR OTHER LOGIC Figure 62. Level Shifter: Connects Volt Circuits to Logic Figure 63. Open Collector Inverter: Inverts the Input Signal +12 V OUT http://onsemi.com 16 ISOLATED ...

Page 17

... MMUN2211LT1G MMUN2211LT3G MMUN2212LT1G MMUN2213LT1G MMUN2214LT1G MMUN2215LT1G MMUN2216LT1G MMUN2230LT1G MMUN2231LT1G MMUN2232LT1G MMUN2233LT1G MMUN2234LT1G MMUN2234LT3G MMUN2238LT1G MMUN2241LT1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. R1(k) R2( A8A A8B 47 47 ...

Page 18

... A A1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...

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