DTC144TT1
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base−emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the SC−59
package which is designed for low power surface mount applications.
Features
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Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 x 1.0 inch Pad
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2005
October, 2005 − Rev. 2
THERMAL CHARACTERISTICS
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Total Device Dissipation
Derate above 25°C
Thermal Resistance,
Thermal Resistance,
Junction and Storage Temperature
This new series of digital transistors is designed to replace a single
ESD Rating
modified gull−winged leads absorb thermal stress during soldering
eliminating the possibility of damage to the die.
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Moisture Sensitivity Level: 1
ESD Rating:
The SC−59 package can be soldered using wave or reflow. The
Pb−Free Package is Available
T
Junction-to-Ambient
Junction-to-Lead
Range
A
= 25°C
Characteristic
Rating
Human Body Model: Class 1
Machine Model: Class B
(T
A
= 25°C unless otherwise noted)
Preferred Devices
Symbol
Symbol
T
V
V
R
R
J
P
, T
CBO
CEO
I
qJA
qJL
C
D
stg
230 (Note 1)
338 (Note 2)
540 (Note 1)
370 (Note 2)
264 (Note 1)
287 (Note 2)
1.8 (Note 1)
2.7 (Note 2)
−55 to +150
Value
Max
100
50
50
1
mAdc
°C/W
°C/W
°C/W
Unit
Unit
Vdc
Vdc
mW
°C
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
*Date Code orientation may vary depending
(INPUT)
upon manufacturing location.
(Note: Microdot may be in either location)
RESISTOR TRANSISTOR
BASE
PIN 2
ORDERING INFORMATION
NPN SILICON BIAS
8T
M
G
MARKING DIAGRAM
http://onsemi.com
= Specific Device Code
= Date Code*
= Pb−Free Package
R
R
1
CASE 318D
1
2
STYLE 1
1
SC−59
8T M G
Publication Order Number:
2
G
3
PIN 1
EMITTER
(GROUND)
PIN 3
COLLECTOR
(OUTPUT)
DTC144TT1/D