MMUN2241LT1G ON Semiconductor, MMUN2241LT1G Datasheet - Page 7

• Manufacturer Part Number: MMUN2241LT1G
• Description: TRANS PREBIASED NPN 50V SOT23
• Manufacturer: ON Semiconductor

Specifications of MMUN2241LT1G

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 100K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 160 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 5mA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 246mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MMUN2241LT1GOS

0.001
0.01
3.5
2.5
1.5
0.5
0.1
4
3
2
1
0
1
0
0
I
C
2
/I
B
4
= 10
V
R
Figure 19. Output Capacitance
, REVERSE BIAS VOLTAGE (VOLTS)
I
C
6
20
, COLLECTOR CURRENT (mA)
Figure 17. V
8
TYPICAL ELECTRICAL CHARACTERISTICS − MMUN2214LT1G
10 15 20 25 30 35 40 45 50
40
CE(sat)
0.1
10
1
0
vs. I
T
V
Figure 21. Input Voltage vs. Output Current
A
O
= −25°C
= 0.2 V
C
60
f = 1 MHz
l
T
E
75°C
25°C
A
= 0 A
= 25°C
10
I
C
http://onsemi.com
, COLLECTOR CURRENT (mA)
80
20
7
100
300
250
200
150
100
10
50
1
0
1
0
T
30
A
V
Figure 20. Output Current vs. Input Voltage
= −25°C
CE
2
= 10
4
75°C
2
I
6
25°C
75°C
C
Figure 18. DC Current Gain
40
V
, COLLECTOR CURRENT (mA)
in
, INPUT VOLTAGE (VOLTS)
8
10
4
15 20 40 50 60 70 80 90
50
25°C
6
T
A
= −25°C
−25°C
V
25°C
T
O
8
A
= 5 V
= 75°C
100
10