LMN400E01-7 Diodes Inc, LMN400E01-7 Datasheet

LMN400E01-7

Manufacturer Part Number

LMN400E01-7

Description

MCU LOAD SWITCH 400MA SOT-363

Manufacturer

Diodes Inc

Datasheet

1.LMN400E01-7.pdf (8 pages)

Specifications of LMN400E01-7

Transistor Type

PNP Pre-Biased, N-Channel Pre-Biased

Applications

Load Switch

Voltage - Rated

50V PNP, 60V N-Channel

Current Rating

400mA PNP, 115mA

Mounting Type

Surface Mount

Package / Case

6-TSSOP, SC-88, SOT-363

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

LMN400E01DITR
LMN400E01TR
LMN400E01TR

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Features

Mechanical Data

General Description

Maximum Ratings, Total Device

Thermal Characteristics

DDTB122LU_DIE

DMN601TK_DIE

Power Dissipation

Power Derating Factor above 37.5°C

Output Current

Junction Operation and Storage Temperature Range

Thermal Resistance, Junction to Ambient Air

(Equivalent to one heated junction of PNP transistor)

LMN400E01 is best suited for applications where the load needs to

be turned on and off using control circuits like micro-controllers,

comparators etc. particularly at a point of load. It features a

discrete pass transistor with stable V

depend on input voltage and can support continuous maximum

current of 400 mA. It also contains an ESD protected discrete N-

MOSFET that can be used as control. The component can be used

as a part of a circuit or as a stand alone discrete device.

•

Notes:

DS30750 Rev. 7 - 2

Voltage Controlled Small Signal Switch

N-MOSFET with ESD Gate Protection

Surface Mount Package

Ideally Suited for Automated Assembly Processes

Lead Free By Design/ROHS Compliant (Note 1)

"Green" Device (Note 2)

Case: SOT-363

Case Material: Molded Plastic. "Green Molding" Compound.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020C

Terminal Connections: See Diagram

Terminals: Finish - Matte Tin annealed over Alloy 42

leadframe. Solderable per MIL- STD -202, Method 208

Marking Information: See Page 8

Ordering Information: See Page 8

Weight: 0.006 grams (approximate)

400 mA LOAD SWITCH FEATURING PRE-BIASED PNP TRANSISTOR AND ESD PROTECTED N-MOSFET

1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001,

which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

Sub-Component P/N

Characteristic

(ESD Protected)

CE(SAT)

which does not

= 25°C unless otherwise specified

Reference

(Note 3)

= 25°C unless otherwise specified

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PNP Transistor

Device Type

N-MOSFET

Symbol

, T

out

der

θ JA

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STG

PNP

E_Q1

C_Q1

Fig 2: Schematic and Pin Configuration

DDTB122LU

R1 10K

R1(NOM)

Fig. 1: SOT-363

10K

⎯

220

-55 to +150

Value

B_Q1

G_Q2

200

400

625

1.6

DMN601TK

LMN400E01

R2(NOM)

S_Q2

D_Q2

220

⎯

NMOS

mW/°C

°C/W

Unit

°C

LMN400E01

Figure

Related parts for LMN400E01-7

LMN400E01-7 Summary of contents

Page 1

... LOAD SWITCH FEATURING PRE-BIASED PNP TRANSISTOR AND ESD PROTECTED N-MOSFET General Description LMN400E01 is best suited for applications where the load needs to be turned on and off using control circuits like micro-controllers, comparators etc. particularly at a point of load. It features a discrete pass transistor with stable V ...

Page 2

... CE C ⎯ ⎯ -5V -400mA CE C ⎯ -0.3V -20mA -50mA /-2.5mA - -5V -400mA -50mA -5mA C B ⎯ 0.286 KΩ ⎯ 13 KΩ ⎯ ⎯ -10V -5mA, ⎯ MHz f = 100MHz V = -10V 0A, ⎯ 1MHz © Diodes Incorporated = 1K L LMN400E01 ...

Page 3

... 300 mA 300 mA 800 7mA lb = 8mA T = 25° 6mA lb = 9mA lb = 5mA lb = 4mA lb = 3mA lb = 2mA lb = 1mA 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5 COLLECTOR-BASE VOLTAGE (V) CB Fig. 4 Output Current vs. Voltage Drop (Pass Element PNP) LMN400E01 © Diodes Incorporated 5.5 ...

Page 4

... FE C DS30750 Rev ° - ° ° ° - ° ° www.diodes.com ° ° 125 C A ° ° 150 ° COLLECTOR CURRENT (A) C Fig vs CE(SAT ° -55 C ° 125 C A ° ° 150 ° COLLECTOR CURRENT (mA) C Fig vs BE(ON LMN400E01 © Diodes Incorporated ...

Page 5

... GATE-SOURCE VOLTAGE GS Fig. 11 Transfer Characteristics V = 10V GS Pulsed ° ° 125 ° 150 C A ° - ° ° ° - DRAIN CURRENT ( Fig. 13 Static Drain-Source On-Resistance vs. Drain Current V GATE SOURCE VOLTAGE (V) GS, Fig. 15 Static Drain-Source On-Resistance vs. Gate-Source Voltage LMN400E01 © Diodes Incorporated ° ° ° ...

Page 6

... Fig. 16 Static Drain-Source On-State Resistance vs. Junction Temperature V = 10V DS30750 Rev 300mA 150mA D ° 25°C A Pulsed = www.diodes.com Pulsed ° 125 C A ° 150 C A ° ° ° ° - ° - ° - ° - ° ° 125 C ° ° 150 C A LMN400E01 © Diodes Incorporated ...

Page 7

... Application Details PNP Transistor (DDTB122LU) and ESD Protected N-MOSFET (DMN601TK) integrated as one in LMN400E01 can be used as a discrete entity for general application integrated circuit to function as a Load Switch. When it is used as the latter as shown in Fig. 20, various input voltage sources can be used as long as it does not exceed the maximum ratings of the device ...

Page 8

... Ordering Information (Note 5) Device LMN400E01-7 Notes: 5. For packaging details our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information Date Code Key Year 2006 Code T Month Jan Feb Code 1 2 Mechanical Details Fig. 23 Suggested Pad Layout Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein ...

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