MCH6935-TL-E SANYO, MCH6935-TL-E Datasheet

TRANS PNP/MOSFET N-CH MCPH6

MCH6935-TL-E

Manufacturer Part Number
MCH6935-TL-E
Description
TRANS PNP/MOSFET N-CH MCPH6
Manufacturer
SANYO
Datasheet

Specifications of MCH6935-TL-E

Transistor Type
PNP, N-Channel
Applications
General Purpose
Voltage - Rated
30V PNP, 30V N-Channel
Current Rating
700mA PNP, 150mA N-Channel
Mounting Type
Surface Mount
Package / Case
6-MCPH
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
869-1181-2
Ordering number : EN8039A
MCH6935
Features
Specifications
Absolute Maximum Ratings at Ta=25°C
Marking : EY
[TR]
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
[FET]
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
[Common Rating]
Total Dissipation
Storage Temperature
Composite type with a PNP transistor and a N-ch MOSFET contained in one package facilitating high-density
mounting.
Ultrasmall package permitting applied sets to be small and slim.
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer ' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer ' s products or
equipment.
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
TR : PNP Epitaxial Planar Silicon Transistor
FET : N-Channel Silicon MOSFET
Power Management Switch
Applications
Symbol
V CBO
V CEO
V EBO
V GSS
V DSS
Tstg
I CP
I DP
Tch
P C
P D
P T
I C
I D
Tj
SANYO Semiconductors
Mounted on a ceramic board (600mm
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (600mm
Mounted on a ceramic board (600mm
MCH6935
30707 TI IM TC-00000561 / 12805EA TS IM TB-00001164
Conditions
2
2
2
✕0.8mm)
✕0.8mm)
✕0.8mm)
DATA SHEET
Ratings
--55 to +150
--700
--1.4
150
150
600
150
0.55
±10
- -30
- -30
0.5
0.5
30
--5
No.8039-1/6
Unit
mA
mA
mA
°C
°C
°C
W
W
W
V
V
V
A
V
V

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MCH6935-TL-E Summary of contents

Page 1

... To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN MCH6935 SANYO Semiconductors TR : PNP Epitaxial Planar Silicon Transistor FET : N-Channel Silicon MOSFET ...

Page 2

... Source 2 : Gate 3 : Collector Emitter 5 : Base 6 : Drain SANYO : MCPH6 MCH6935 Symbol Conditions I CBO V CB =--30V =0A I EBO V EB =--4V = =--2V =--10mA =--10V =--50mA Cob V CB =--10V, f=1MHz V CE (sat =--200mA =--10mA V BE (sat =--200mA =--10mA V (BR)CBO I C =--10µ =0A V (BR)CEO I C =--1mA =∞ ...

Page 3

... -- --100 -- --100 --1000 --1.0 IT05051 [TR =50 2 --1 --100 --1000 --1.0 IT05055 V DD =15V I D =80mA =187.5Ω OUT G MCH6935 50Ω --2V --0.2 --0.4 --0.6 --0.8 --1.0 Base-to-Emitter Voltage (sat = -- --100 Collector Current (sat = -- --100 Collector Current No.8039-3/6 [TR] --1.2 IT05050 [TR --1000 IT05054 ...

Page 4

... Drain-to-Source Voltage (on 80mA =40mA Gate-to-Source Voltage MCH6935 [TR] 1000 f=1MHz 100 IT05053 [TR] 0.6 OUT 0.5 0.4 0.3 0.2 0 --10 IT06403 [FET] 0. =10V 0.25 0.20 0. =1.5V 0.10 0.05 0 0.8 ...

Page 5

... Ambient Temperature ° 0 0.01 0.5 0.6 0.7 0.8 0.9 Diode Forward Voltage Ciss, Coss, Crss -- Ciss 7 Coss 5 3 Crss 2 1 Drain-to-Source Voltage MCH6935 [FET =2. 0.001 IT00033 [FET 0 100 120 140 160 0.01 IT00035 [FET = 100 1.0 1.1 1.2 0.01 IT00037 ...

Page 6

... Ambient Temperature °C Note on usage : Since the MCH6935 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co ...

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