VEC2901-TL-E SANYO, VEC2901-TL-E Datasheet
VEC2901-TL-E
Specifications of VEC2901-TL-E
Related parts for VEC2901-TL-E
VEC2901-TL-E Summary of contents
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... SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN VEC2901 TR : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Silicon MOSFET Switching, Flash Applications ...
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... Base 2 : Emitter 3 : Gate 4 : Drain 5 : Source 6 : Collector 7 : Collector 8 : Collector SANYO : VEC8 VEC2901 Symbol Conditions V BE (sat =2A =40mA V (BR)CBO (BR)CEO I C =1mA (BR)EBO See specified Test Circuit. t stg See specified Test Circuit See specified Test Circuit. V (BR)DSS I D =1mA DSS ...
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... Collector-to-Emitter Voltage 100 0.01 0.1 Collector Current (sat 0 0. 0.01 0.1 Collector Current VEC2901 Switching TimeII Test Circuit V OUT [TR 0.6 0.8 1.0 IT08135 [TR =2V 0.1 0. 1.0 IT08137 [TR =50 1 1.0 IT08139 I B1 PW= OUTPUT INPUT 100 F ...
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... Collector-to-Emitter Voltage 0.16 0.14 3.5V 4.0V 0.12 0.10 0.08 0.06 0.04 0. 0.2 0.4 0.6 Drain-to-Source Voltage (on 80mA =40mA Gate-to-Source Voltage VEC2901 [TR] 1000 f=1MHz 100 0.01 IT08141 [TR] 1 1.1 1.0 0.8 0.6 0.4 0 100 0 IT08143 [FET] 0. =10V 0.25 0.20 0. ...
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... Ambient Temperature 0 0.01 0.5 0.6 0.7 0.8 0.9 Diode Forward Voltage Ciss, Coss, Crss -- V DS 100 1 Drain-to-Source Voltage VEC2901 [FET] 100 V GS =2. 1 0.001 IT00033 [FET 0.01 100 120 140 160 0.01 IT00035 [FET] 1000 100 1.0 1.1 1.2 ...
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... Amibient Temperature Note on usage : Since the VEC2901 includes MOSFET, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’ ...