ZHB6792TC Diodes Zetex, ZHB6792TC Datasheet - Page 2

• Manufacturer Part Number: ZHB6792TC
• Description: TRANS H-BRIDGE BIPO SOT223-8
• Manufacturer: Diodes Zetex

Specifications of ZHB6792TC

• Transistor Type: 2NPN, 2PNP (H-Bridge)
• Applications: General Purpose
• Voltage - Rated: 70V
• Current Rating: 1A
• Mounting Type: Surface Mount
• Package / Case: SOT-223-8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

THERMAL CHARACTERISTICS
* The power which can be dissipated assuming the device is mounted in a typical manner on a PCB
with copper equal to 2 inches square.
†"Two devices on" is the standard operating condition for the bridge. Eg. opposing NPN/PNP pairs
rurned on.
PARAMETER
Total Power Dissipation at T
Any single transistor “on”
Q1 and Q3 “on” or Q2 and Q4 “on” equally
Derate above 25°C*
Any single transistor “on”
Q1 and Q3 “on” or Q2 and Q4 “on” equally
Thermal Resistance - Junction to Ambient*
Any single transistor “on”
Q1 and Q3 “on” or Q2 and Q4 “on” equally
ZHB6792
100
2.0
1.5
1.0
0.5
80
60
40
20
0
100us
0
0
Transient Thermal Resistance
20
1ms
t1
Single Transistor "On"
tP
40
T - Temperature (°C)
10ms 100ms
D=t1
Derating curve
tP
Pulse Width
60
80
amb
100
1s
= 25°C*
120
D=1
D=0.5
D=0.2
D=0.1
D=0.05
Single Pulse
10s
140
100s
160
SYMBOL
P
tot
0.1
60
50
40
30
20
10
10
100us
0
1
0.1
Full Copper
Transient Thermal Resistance
Q1 and Q3 or Q2 and Q4 "On"
Minimum
Copper
Pd v Pcb Area Comparison
1ms
t1
tP
Pcb Area (inches squared)
10ms
D=t1
VALUE
1.25
62.5
tP
100
10
16
Pulse Width
2
100ms
1
1s
D=1
D=0.05
D=0.5
D=0.2
D=0.1
Single Pulse
10s
mW/ °C
mW/ °C
Dual Transistors †
Single Transistor
°C/ W
°C/ W
UNIT
Dual Transistors †
Single Transistor
W
W
100s
10