UMF32NTR Rohm Semiconductor, UMF32NTR Datasheet - Page 3

• Manufacturer Part Number: UMF32NTR
• Description: TRANS PNP DUAL 50V UMT6
• Manufacturer: Rohm Semiconductor

Specifications of UMF32NTR

• Transistor Type: PNP Pre-Biased, N-Channel
• Applications: General Purpose
• Voltage - Rated: 50V PNP, 30V N Channel
• Current Rating: 100mA PNP, 100mA N-Channel
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Module Configuration: Dual
• Transistor Polarity: PNP + N MOSFET
• Collector Emitter Voltage V(br)ceo: -50V
• Gain Bandwidth Ft Typ: 250MHz
• Power Dissipation Pd: 150mW
• Dc Collector Current: -100mA
• Operating: RoHS Compliant
• Dc Current Gain Hfe: 250
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical characteristic curves
Tr1
Tr2
○
EMF32 / UMF32N
c
www.rohm.com
500
200
100
0.15
0.05
1k
50
20
10
0.1
Fig.6
2010 ROHM Co., Ltd. All rights reserved.
−100μ
5
2
1
Fig.3 Typical output characteristics
0
0
0.5
50
Fig.1 DC current gain vs. collector
20
10
0.001
5
2
1
−200μ
DRAIN-SOURCE VOLTAGE : V
COLLECTOR CURRENT : I
0.002
Static drain-source on-state
resistance vs. drain current ( Ι )
−500μ
1
current
Ta=125°C
Ta=100°C
4V
3.5V
DRAIN CURRENT : I
0.005 0.01 0.02
−1m
−40°C
−25°C
75°C
25°C
25°C
V
2
−2m
GS
2.5V
2V
=1.5V
3V
−5m
3
−10m
0.05 0.1
−20m
D
C
V
Ta=25°C
Pulsed
4
(A)
(A)
DS
CE
=−5V
−50m −100m
V
Pulsed
(V)
GS
0.2
=4V
5
0.5
Fig.4 Typical transfer characteristics
200m
100m
−500m
−200m
−100m
0.5m
0.2m
0.1m
−50m
−20m
−10m
50m
20m
10m
Fig.7
−5m
−2m
−1m
5m
2m
1m
−100μ
−1
Fig.2 Collector-emitter saturation
0
0.5
50
20
10
0.001
5
2
1
V
Pulsed
−200μ
DS
GATE-SOURCE VOLTAGE : V
COLLECTOR CURRENT : I
0.002
=3V
Static drain-source on-state
resistance vs. drain current ( ΙΙ )
voltage vs. collector current
−500μ
Ta=125°C
1
DRAIN CURRENT : I
0.005 0.01 0.02
Ta=100°C
−1m
−25°C
75°C
25°C
−40°C
25°C
−2m
2
Ta=125°C
3/4
−5m
−25°C
75°C
25°C
−10m
0.05 0.1
−20m
3
D
C
l
GS
C
(A)
(A)
/l
V
Pulsed
B
(V)
−50m−100m
=20
GS
0.2
=2.5V
4
0.5
1.5
0.5
2
0
1
−50
Fig.8
Fig.5 Gate threshold voltage vs.
15
10
0
5
0
CHANNEL TEMPERATURE : Tch (°C)
−25
GATE-SOURCE VOLTAGE : V
channel temperature
Static drain-source on-state
resistance vs. gate-source
voltage
0
5
25
50
10
75
2010.09 - Rev.A
I
I
D
D
=0.1A
=0.05A
100 125 150
V
I
Pulsed
D
15
Data Sheet
DS
=0.1mA
=3V
Ta=25°C
Pulsed
GS
(V)
20