BTA26-800BWRG STMicroelectronics, BTA26-800BWRG Datasheet - Page 5

• Manufacturer Part Number: BTA26-800BWRG
• Description: TRIAC 25A 800V INSUL TOP3
• Manufacturer: STMicroelectronics
• Series: Snubberless™r
• Type: TRIACr

Specifications of BTA26-800BWRG

• Triac Type: Alternistor - Snubberless
• Mounting Type: Through Hole
• Configuration: Single
• Current - Hold (ih) (max): 75mA
• Voltage - Off State: 800V
• Current - Gate Trigger (igt) (max): 50mA
• Current - Non Rep. Surge 50, 60hz (itsm): 250A, 260A
• Current - On State (it (rms)) (max): 25A
• Voltage - Gate Trigger (vgt) (max): 1.3V
• Package / Case: TOP-3 Insulated
• Current - On State (it (rms) (max): 25A
• Repetitive Peak Off-state Volt: 800V
• Off-state Voltage: 800V
• Hold Current: 75mA
• Gate Trigger Current (max): 50mA
• Gate Trigger Voltage (max): 1.3V
• Package Type: TOP Insulated
• Peak Repeat Off Current: 5uA
• Peak Surge On-state Current (max): 260A
• On State Voltage(max): 1.55@35AV
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Operating Temp Range: -40C to 125C
• Operating Temperature Classification: Automotive
• Current, Average Input: 25 A
• Current, Dc Gate-trigger: 35 to 50 mA
• Current, On-state, Rms, Maximum: 25 A
• Current, Surge, Non-repetitive Peak Forward: 260 A
• Dissipation, Gate-power, Average: 1 W
• Resistance, Thermal, Junction To Case: 1.1 °C⁄W
• Temperature, Operating, Maximum: 125 °C
• Temperature, Operating, Minimum: -40 °C
• Thermal Resistance, Junction To Ambient: 50 °C⁄W
• Voltage, Dc Gate-trigger: 1.3 V (Max.)
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Off-state Leakage Current @ Vdrm Idrm: 5 uA
• Gate Trigger Voltage (vgt): 1.3 V
• Gate Trigger Current (igt): 50 mA
• Holding Current (ih Max): 75 mA
• Forward Voltage Drop: 1.55 V
• Mounting Style: Through Hole
• Repetitive Peak Forward Blocking Voltage: 800 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4172-5

BTA24, BTB24, BTA25, BTA26, BTB26, T25
Figure 7.
Figure 9.
Figure 11. D
80
70
60
50
40
30
20
10
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
3000
1000
0
100
0
0.1
R
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
0.01
th(j-a)
I
TSM
B
dI/dt limitation:
4
(°C/W)
(A), I t (A s)
50A/µs
Non-repetitive surge peak on-state
current for a sinusoidal pulse with
width t
value of I
Relative variation of critical rate of
decrease of main current versus
(dV/dt)c (typical values)
ambient versus copper surface under
tab (printed circuit board FR4, copper
thickness: 35 µm)
8
2
2
PAK thermal resistance junction to
2
12
1.0
0.10
p
(dV/dt)c (V/µs)
< 10 ms and corresponding
16
2
t
S(cm²)
t (ms)
p
20
24
10.0
1.00
28
I t
2
T2535/CW/BW
I
32
TSM
T initial=25°C
j
D PAK
2
36
10.00
100.0
40
Figure 8.
Figure 10. Relative variation of critical rate of
2.5
2.0
1.5
1.0
0.5
0.0
6
5
4
3
2
1
0
(dI/dt)c [T ] /
0
-40
I
GT H L
,I ,I [T ] /
-20
I
H
& I
j
L
25
Relative variation of gate trigger
current, holding current and
latching current versus junction
temperature (typical values)
I
decrease of main current versus T
j
GT
(dI/dt)c [T s
0
I
GT H L
,I ,I [T =25°C]
20
j
50
j
pecified]
40
T (°C)
T (°C)
j
j
60
75
80
Characteristics
100
100
120
140
125
5/12
j