MAC4DCN-1G ON Semiconductor, MAC4DCN-1G Datasheet

THYRISTOR TRIAC 4A 800V DPAK-3

MAC4DCN-1G

Manufacturer Part Number
MAC4DCN-1G
Description
THYRISTOR TRIAC 4A 800V DPAK-3
Manufacturer
ON Semiconductor
Datasheet

Specifications of MAC4DCN-1G

Triac Type
Standard
Mounting Type
Through Hole
Configuration
Single
Current - Hold (ih) (max)
35mA
Voltage - Off State
800V
Current - Gate Trigger (igt) (max)
35mA
Current - Non Rep. Surge 50, 60hz (itsm)
40A @ 60Hz
Current - On State (it (rms)) (max)
4A
Voltage - Gate Trigger (vgt) (max)
1.3V
Package / Case
TO-251-3 Long Leads, IPak, TO-251AB
Current - On State (it (rms) (max)
4A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MAC4DCN-001G
MAC4DCN-1GOS

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MAC4DCN-1G
Manufacturer:
ON Semiconductor
Quantity:
10
Part Number:
MAC4DCN-1G
Manufacturer:
ON/安森美
Quantity:
20 000
MAC4DCM, MAC4DCN
Triacs
Silicon Bidirectional Thyristors
applications such as motor control; process control; temperature, light
and speed control.
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. V
MAXIMUM RATINGS
January, 2009 − Rev. 7
Peak Repetitive Off−State Voltage
On−State RMS Current
Peak Non-Repetitive Surge Current
Circuit Fusing Consideration
Peak Gate Power
Average Gate Power
Peak Gate Current
Peak Gate Voltage
Operating Junction Temperature Range
Storage Temperature Range
Designed for high volume, low cost, industrial and consumer
Small Size Surface Mount DPAK Package
Passivated Die for Reliability and Uniformity
Blocking Voltage to 800 V
On−State Current Rating of 4.0 A RMS at 108 C
High Immunity to dv/dt − 500 V/ms at 125 C
High Immunity to di/dt − 6.0 A/ms at 125 C
Epoxy Meets UL 94 V−0 @ 0.125 in
ESD Ratings: Human Body Model, 3B u 8000 V
Pb−Free Packages are Available
Semiconductor Components Industries, LLC, 2009
voltages shall not be tested with a constant current source such that the
voltage ratings of the device are exceeded.
(Note 1) (T
50 to 60 Hz, Gate Open)
(Full Cycle Sine Wave, 60 Hz,
T
(One Full Cycle Sine Wave, 60 Hz,
T
(t = 8.3 msec)
(Pulse Width
(t = 8.3 msec, T
(Pulse Width
(Pulse Width
DRM
C
J
= 125 C)
= 108 C)
and V
J
RRM
= −40 to 125 C, Sine Wave,
Rating
Machine Model, C u 400 V
10 msec, T
20 msec, T
20 msec, T
C
for all types can be applied on a continuous basis. Blocking
= 108 C)
(T
J
= 25 C unless otherwise noted)
MAC4DCM
MAC4DCN
C
C
C
Preferred Device
= 108 C)
= 108 C)
= 108 C)
Symbol
I
P
V
V
T(RMS)
I
P
V
T
G(AV)
I
DRM,
TSM
RRM
GM
T
I
GM
GM
stg
2
J
t
−40 to 125
−40 to 150
Value
600
800
4.0
6.6
2.0
1.0
4.0
5.0
40
1
A
Unit
2
W
W
V
A
A
A
V
sec
C
C
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
1 2
1
2
3
3
1
2
3
4
Y
WW
AC4DCx
G
MT2
ORDERING INFORMATION
4.0 AMPERES RMS
4
4
600 − 800 VOLTS
http://onsemi.com
PIN ASSIGNMENT
CASE 369C
CASE 369D
STYLE 6
STYLE 6
DPAK−3
DPAK
TRIACS
= Year
= Work Week
= Device Code
= Pb−Free Package
x= M or N
Main Terminal 1
Main Terminal 2
Main Terminal 2
Publication Order Number:
Gate
DIAGRAMS
G
MARKING
MT1
MAC4DCM/D
4DCxG
YWW
AC
4DCxG
YWW
AC

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MAC4DCN-1G Summary of contents

Page 1

... MAC4DCM, MAC4DCN Preferred Device Triacs Silicon Bidirectional Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. Features Small Size Surface Mount DPAK Package Passivated Die for Reliability and Uniformity Blocking Voltage to 800 V On− ...

Page 2

... MAC4DCM−001 MAC4DCM−1G MAC4DCMT4 MAC4DCMT4G MAC4DCN−001 MAC4DCN−1G MAC4DCNT4 MAC4DCNT4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/ unless otherwise noted; Electricals apply in both directions ...

Page 3

... Voltage Current Characteristic of Triacs Symbol Parameter V Peak Repetitive Forward Off−State Voltage DRM I Peak Forward Blocking Current DRM V Peak Repetitive Reverse Off−State Voltage RRM I Peak Reverse Blocking Current RRM V Maximum On−State Voltage TM I Holding Current H Quadrant II (−) I GATE I − GT Quadrant III (− ...

Page 4

CONDUCTION ANGLE 105 0 0.5 1.0 1.5 2.0 2 RMS ON-STATE CURRENT (AMPS) T(RMS) Figure 1. RMS Current Derating 100 TYPICAL @ MAXIMUM @ ...

Page 5

MT2 POSITIVE MT2 NEGATIVE 10 0 -50 - JUNCTION TEMPERATURE ( C) J Figure 7. Typical Holding Current versus Junction Temperature 10 K 8 400 ...

Page 6

K 8 400 V PK 6.0 K 600 V 4.0 K 800 V 2 100 105 110 115 T , JUNCTION TEMPERATURE ( C) J Figure 13. Typical Exponential Static dv/dt versus Junction Temperature, ...

Page 7

... 0.13 (0.005) M 5.80 0.228 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. PACKAGE DIMENSIONS DPAK CASE 369C ISSUE O −T− SEATING PLANE SOLDERING FOOTPRINT* 6.20 3.0 0.244 0.118 2.58 ...

Page 8

... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...

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