BTB12-600BW3G ON Semiconductor, BTB12-600BW3G Datasheet - Page 5

• Manufacturer Part Number: BTB12-600BW3G
• Description: TRIAC 12A 50MA 600V TO-220AB
• Manufacturer: ON Semiconductor

Specifications of BTB12-600BW3G

• Triac Type: Standard
• Mounting Type: Through Hole
• Configuration: Single
• Current - Hold (ih) (max): 50mA
• Voltage - Off State: 600V
• Current - Gate Trigger (igt) (max): 50mA
• Current - Non Rep. Surge 50, 60hz (itsm): 120A @ 60Hz
• Current - On State (it (rms)) (max): 12A
• Voltage - Gate Trigger (vgt) (max): 1.1V
• Package / Case: TO-220-3
• Current - On State (it (rms) (max): 12A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BTB12-600BW3G; BTB12-600BW3GOS

100
10
1
-40 -25 -10 5
Figure 6. Typical Gate Trigger Current Variation
Figure 8. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)
I
TM
ADJUST FOR
, 60 Hz V
200 V
CHARGE
T
RMS
J
AC
, JUNCTION TEMPERATURE (°C)
20
TRIGGER
Note: Component values are for verification of rated (di/dt)
Q2
35
5000
50
4K
3K
2K
1K
0
BTB12-600BW3G, BTB12-800BW3G
CONTROL
10
NON‐POLAR
CHARGE
65
Figure 9. Critical Rate of Rise of Off‐State Voltage
Q3
80
R
Q1
V
R
G
C
, GATE TO MAIN TERMINAL 1 RESISTANCE (OHMS)
L
D
L
95
= 30 W
= 12 V
110 125
(Exponential Waveform)
http://onsemi.com
100
5
1.8
1.6
1.4
1.2
0.8
0.6
0.4
L
2
1
1N914
L
-40 -25 -10 5
Figure 7. Typical Gate Trigger Voltage Variation
c
. See AN1048 for additional information.
MEASURE
51 W
1000
I
MT2
G
T
J
V
T
, JUNCTION TEMPERATURE (°C)
D
J
MT1
= 125°C
= 800 Vpk
Q2
Q3
20
35
Q1
50
1N4007
65
-
+
80
V
R
200 V
D
L
95
= 30 W
= 12 V
110 125
c