BTA201-800E,112 NXP Semiconductors, BTA201-800E,112 Datasheet - Page 4

TRIAC 800V 1A TO-92

BTA201-800E,112

Manufacturer Part Number
BTA201-800E,112
Description
TRIAC 800V 1A TO-92
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BTA201-800E,112

Package / Case
TO-92-3 (Standard Body), TO-226
Triac Type
Logic - Sensitive Gate
Mounting Type
Through Hole
Configuration
Single
Current - Hold (ih) (max)
12mA
Voltage - Off State
800V
Current - Gate Trigger (igt) (max)
10mA
Current - Non Rep. Surge 50, 60hz (itsm)
12.5A, 13.7A
Current - On State (it (rms)) (max)
1A
Voltage - Gate Trigger (vgt) (max)
1.5V
Current - On State (it (rms) (max)
1A
Rated Repetitive Off-state Voltage Vdrm
800 V
Breakover Current Ibo Max
13.7 A
Off-state Leakage Current @ Vdrm Idrm
0.5 mA
Gate Trigger Voltage (vgt)
1.5 V
Gate Trigger Current (igt)
10 mA
Holding Current (ih Max)
12 mA
Forward Voltage Drop
1.5 V @ 1.4 A
Mounting Style
SMD/SMT
Repetitive Peak Forward Blocking Voltage
800 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
568-3690
934059679112
BTA201-800E
NXP Semiconductors
BTA201_SER_B_E_ER_4
Product data sheet
Fig 3.
Fig 4.
I
TSM
(A)
I
T(RMS)
(A)
(1) dI
10
10
10
3
2
1
0
3
2
10
10
t
Non-repetitive peak on-state current as a function of pulse width; maximum values
f = 50 Hz; T
RMS on-state current as a function of surge
duration; maximum values
p
5
2
T
/dt limit
20 ms
(1)
lead
10
1
54.3 C
10
1
4
surge duration (s)
001aag961
Rev. 04 — 4 February 2008
10
BTA201 series B, E and ER
10
3
Fig 5.
I
T(RMS)
(A)
1.2
1.0
0.8
0.6
0.4
0.2
0
1 A Three-quadrant triacs high commutation
50
RMS on-state current as a function of lead
temperature; maximum values
0
10
2
50
54.3 C
I
T
T
j(init)
t
p
(s)
100
= 25 C max
t
p
© NXP B.V. 2008. All rights reserved.
T
lead
003aaa955
001aag960
I
TSM
( C)
t
10
150
1
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