BTA208X-800B,127 NXP Semiconductors, BTA208X-800B,127 Datasheet - Page 4

• Manufacturer Part Number: BTA208X-800B,127
• Description: TRIAC 800V 8A SOT1861
• Manufacturer: NXP Semiconductors

Specifications of BTA208X-800B,127

• Package / Case: TO-220-3 Full Pack
• Mounting Type: Through Hole
• Configuration: Single
• Current - Hold (ih) (max): 60mA
• Voltage - Off State: 800V
• Current - Gate Trigger (igt) (max): 50mA
• Current - Non Rep. Surge 50, 60hz (itsm): 65A, 71A
• Current - On State (it (rms) (max): 8A
• Voltage - Gate Trigger (vgt) (max): 1.5V
• Triac Type: Standard
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Breakover Current Ibo Max: 71 A
• On-state Rms Current (it Rms): 8 A
• Off-state Leakage Current @ Vdrm Idrm: 0.1 mA
• Gate Trigger Voltage (vgt): 0.4 V
• Gate Trigger Current (igt): 18 mA
• Holding Current (ih Max): 60 mA
• Forward Voltage Drop: 1.3 V
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Off-state Capacitance Co: 10 pF
• Repetitive Peak Forward Blocking Voltage: 800 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934039010127::BTA208X-800B::BTA208X-800B

Philips Semiconductors
September 1997
Three quadrant triacs
high commutation
Fig.8. Normalised latching current I
Fig.9. Normalised holding current I
2.5
1.5
0.5
2.5
1.5
0.5
I
GT
2.5
1.5
0.5
3
2
1
0
3
2
1
0
-50
-50
(T
3
2
1
0
IGT(25 C)
IL(25 C)
-50
IGT(Tj)
IL(Tj)
IH(25C)
IH(Tj)
Fig.7. Normalised gate trigger current
j
)/ I
GT
versus junction temperature T
versus junction temperature T
(25˚C), versus junction temperature T
0
0
0
BTA212
TRIAC
TRIAC
Tj / C
Tj / C
Tj / C
50
50
50
100
T2+ G-
T2- G-
100
100
T2+ G+
H
L
(T
(T
j
j
)/ I
)/ I
j
j
.
.
H
L
(25˚C),
(25˚C),
150
150
150
j
.
4
Fig.12. Typical, critical rate of change of commutating
Fig.10. Typical and maximum on-state characteristic.
Fig.11. Transient thermal impedance Z
1000
25
20
15
10
current dI
0.01
100
5
0
0.1
10
10
0
1
10us
IT / A
1
20
Rs = 0.0378 Ohms
Vo = 1.264 V
Tj = 125 C
dIcom/dt (A/ms)
Zth j-hs (K/W)
Tj = 25 C
with heatsink compound
without heatsink compound
0.5
0.1ms
40
com
/dt versus junction temperature.
unidirectional
pulse width t
1ms
1
60
BTA208
BT137
tp / s
VT / V
BT137
10ms
Tj / C
typ
1.5
80
BTA208X series B
bidirectional
P
D
p
0.1s
.
100
Product specification
2
t
p
max
1s
120
2.5
th j-hs
t
, versus
Rev 1.200
10s
140
3