BT138X-800E,127 NXP Semiconductors, BT138X-800E,127 Datasheet - Page 6

• Manufacturer Part Number: BT138X-800E,127
• Description: TRIAC 800V 12A SOT186A
• Manufacturer: NXP Semiconductors

Specifications of BT138X-800E,127

• Package / Case: TO-220-3 Full Pack
• Triac Type: Logic - Sensitive Gate
• Mounting Type: Through Hole
• Configuration: Single
• Current - Hold (ih) (max): 30mA
• Voltage - Off State: 800V
• Current - Gate Trigger (igt) (max): 10mA
• Current - Non Rep. Surge 50, 60hz (itsm): 95A, 105A
• Current - On State (it (rms)) (max): 12A
• Voltage - Gate Trigger (vgt) (max): 1.5V
• Current - On State (it (rms) (max): 12A
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Breakover Current Ibo Max: 105 A
• On-state Rms Current (it Rms): 12 A
• Off-state Leakage Current @ Vdrm Idrm: 0.1 mA
• Gate Trigger Voltage (vgt): 0.7 V
• Gate Trigger Current (igt): 11 mA
• Holding Current (ih Max): 30 mA
• Forward Voltage Drop: 1.4 V
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Off-state Capacitance Co: 10 pF
• Repetitive Peak Forward Blocking Voltage: 800 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934039550127; BT138X-800E; BT138X-800E

NXP Semiconductors
6. Isolation characteristics
Table 5.
T
7. Static characteristics
Table 6.
T
BT138X_SER_D_E_3
Product data sheet
Symbol
V
C
Symbol Parameter
I
I
I
V
V
I
GT
L
H
D
h
j
isol(RMS)
T
GT
isol
= 25 C unless otherwise specified.
= 25 C unless otherwise specified.
gate trigger current V
latching current
holding current
on-state voltage
gate trigger voltage I
off-state current
Isolation limiting values and characteristics
Static characteristics
Parameter
RMS isolation voltage from all three terminals to external heatsink;
isolation capacitance
Conditions
V
V
I
V
T
T
D
D
D
D
T2+ G+
T2+ G
T2 G
T2 G+
T2+ G+
T2+ G
T2 G
T2 G+
V
V
= 15 A; see
= 0.1 A; see
= 12 V; I
= 12 V; I
= 12 V; I
= V
D
D
= 12 V
= V
Conditions
f = 50 Hz to 60 Hz; sinusoidal waveform;
relative humidity
from pin 2 to external heatsink; f = 1 MHz
DRM(max)
DRM
T
G
G
; T
= 0.1 A; see
= 0.1 A; see
= 0.1 A; see
Figure 9
Figure 7
; T
j
= 125 C
j
Rev. 03 — 10 March 2008
= 125 C
65 %; clean and dust free
Figure 8
Figure 10
Figure 11
BT138X series D and E
BT138X-600D
Min
-
-
-
-
-
-
-
-
-
-
-
0.25
-
12 A four-quadrant triacs, sensitive gate
Typ
1.3
2.8
3.2
5.5
-
-
-
-
-
1.4
0.7
0.4
0.1
Max
5
5
5
10
15
20
15
20
10
1.65
1.5
-
0.5
Min
-
-
BT138X-600E
BT138X-800E
Min
-
-
-
-
-
-
-
-
-
-
-
0.25
-
Typ
-
10
Typ
2.5
4.0
5.0
11
-
-
-
-
-
1.4
0.7
0.4
0.1
© NXP B.V. 2008. All rights reserved.
Max
2500
-
Max
10
10
10
25
30
40
30
40
30
1.65
1.5
-
0.5
Unit
V
pF
6 of 12
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
V
V
V
mA