BT138X-600G,127 NXP Semiconductors, BT138X-600G,127 Datasheet - Page 3

• Manufacturer Part Number: BT138X-600G,127
• Description: TRIAC 600V 12A TO-220F
• Manufacturer: NXP Semiconductors

Specifications of BT138X-600G,127

• Package / Case: TO-220-3 Full Pack
• Triac Type: Standard
• Mounting Type: Through Hole
• Configuration: Single
• Current - Hold (ih) (max): 60mA
• Voltage - Off State: 600V
• Current - Gate Trigger (igt) (max): 50mA
• Current - Non Rep. Surge 50, 60hz (itsm): 95A, 105A
• Current - On State (it (rms)) (max): 12A
• Voltage - Gate Trigger (vgt) (max): 1.5V
• Current - On State (it (rms) (max): 12A
• Rated Repetitive Off-state Voltage Vdrm: 600 V
• Breakover Current Ibo Max: 105 A
• On-state Rms Current (it Rms): 12 A
• Off-state Leakage Current @ Vdrm Idrm: 0.1 mA
• Gate Trigger Voltage (vgt): 0.7 V
• Gate Trigger Current (igt): 22 mA
• Holding Current (ih Max): 30 mA
• Forward Voltage Drop: 1.4 V
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Off-state Capacitance Co: 10 pF
• Repetitive Peak Forward Blocking Voltage: 600 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934023220127; BT138X-600G; BT138X-600G

Philips Semiconductors
DYNAMIC CHARACTERISTICS
T
July 2001
Triacs
j
SYMBOL PARAMETER
dV
dV
t
gt
= 25 ˚C unless otherwise stated
D
com
/dt
/dt
Critical rate of rise of
off-state voltage
Critical rate of change of
commutating voltage
Gate controlled turn-on
time
CONDITIONS
V
T
waveform; gate open
circuit
V
I
dI
open circuit
I
I
T(RMS)
TM
G
j
DM
DM
com
= 125 ˚C; exponential
= 0.1 A; dI
= 16 A; V
= 67% V
= 400 V; T
/dt = 5.4 A/ms; gate
= 12 A;
D
G
DRM(max)
/dt = 5 A/ s
= V
j
BT138X-
= 95 ˚C;
3
DRM(max)
;
;
100
...
-
-
MIN.
...F
50
-
-
TYP.
250
20
BT138X series
2
Product specification
MAX.
-
-
-
Rev 1.400
UNIT
V/ s
V/ s
s