MAC4DLMT4G ON Semiconductor, MAC4DLMT4G Datasheet

THYRISTOR TRIAC 4A 600V DPAK

MAC4DLMT4G

Manufacturer Part Number
MAC4DLMT4G
Description
THYRISTOR TRIAC 4A 600V DPAK
Manufacturer
ON Semiconductor
Datasheet

Specifications of MAC4DLMT4G

Triac Type
Logic - Sensitive Gate
Mounting Type
Surface Mount
Configuration
Single
Current - Hold (ih) (max)
15mA
Voltage - Off State
600V
Current - Gate Trigger (igt) (max)
3mA
Current - Non Rep. Surge 50, 60hz (itsm)
40A @ 60Hz
Current - On State (it (rms)) (max)
4A
Voltage - Gate Trigger (vgt) (max)
1.3V
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Current - On State (it (rms) (max)
4A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MAC4DLMT4G
Manufacturer:
MICROCHIP
Quantity:
2 192
Part Number:
MAC4DLMT4G
Manufacturer:
ON
Quantity:
16 939
MAC4DLM
Sensitive Gate Triacs
Silicon Bidirectional Thyristors
applications such as motor control; process control; temperature, light
and speed control.
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. V
MAXIMUM RATINGS
August, 2010 − Rev. 5
Peak Repetitive Off−State Voltage (Note 1)
(T
50 to 60 Hz, Gate Open)
On−State RMS Current
(Full Cycle Sine Wave, 60 Hz, T
Peak Non-Repetitive Surge Current
(One Full Cycle, 60 Hz, T
Circuit Fusing Consideration (t = 8.3 msec)
Peak Gate Power
(Pulse Width
Average Gate Power
(t = 8.3 msec, T
Peak Gate Current
(Pulse Width
Peak Gate Voltage
(Pulse Width
Operating Junction Temperature Range
Storage Temperature Range
Designed for high volume, low cost, industrial and consumer
Small Size Surface Mount DPAK Package
Passivated Die for Reliability and Uniformity
Four−Quadrant Triggering
Blocking Voltage to 600 V
On−State Current Rating of 4.0 Amperes RMS at 93 C
Low Level Triggering and Holding Characteristics
Epoxy Meets UL 94 V−0 @ 0.125 in
ESD Ratings: Human Body Model, 3B u 8000 V
Pb−Free Packages are Available
Semiconductor Components Industries, LLC, 2010
voltages shall not be tested with a constant current source such that the
voltage ratings of the device are exceeded.
J
DRM
= −40 to 110 C, Sine Wave,
and V
RRM
10 msec, T
20 msec, T
20 msec, T
C
= 93 C)
Rating
for all types can be applied on a continuous basis. Blocking
Machine Model, C u 400 V
(T
J
C
C
C
J
= 110 C)
= 25 C unless otherwise noted)
= 93 C)
= 93 C)
= 93 C)
C
= 93 C)
Symbol
I
P
V
V
T(RMS)
I
P
V
I
T
TSM
G(AV)
DRM,
RRM
I
GM
T
GM
GM
stg
2
J
t
−40 to 150
−40 to 110
Value
600
4.0
6.6
2.0
1.0
4.0
5.0
40
1
A
Unit
2
W
W
V
A
A
A
V
sec
C
C
1 2
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
1
2
3
3
1
2
3
4
Y
WW
AC4DLM = Device Code
G
MT2
ORDERING INFORMATION
4
4.0 AMPERES RMS
4
http://onsemi.com
PIN ASSIGNMENT
CASE 369C
CASE 369D
600 VOLTS
STYLE 6
STYLE 6
DPAK−3
DPAK
TRIACS
= Year
= Work Week
= Pb−Free Package
Publication Order Number:
Main Terminal 1
Main Terminal 2
Main Terminal 2
Gate
DIAGRAMS
MARKING
G
MAC4DLM/D
MT1
4DLMG
YWW
AC
4DLMG
YWW
AC

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MAC4DLMT4G Summary of contents

Page 1

... MAC4DLM Sensitive Gate Triacs Silicon Bidirectional Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. Features Small Size Surface Mount DPAK Package Passivated Die for Reliability and Uniformity Four−Quadrant Triggering Blocking Voltage to 600 V On− ...

Page 2

... Duty Cycle ORDERING INFORMATION Device MAC4DLM−001 MAC4DLM−001G MAC4DLMT4 MAC4DLMT4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/ unless otherwise noted; Electricals apply in both directions) J ...

Page 3

... Voltage Current Characteristic of Triacs Symbol Parameter V Peak Repetitive Forward Off−State Voltage DRM I Peak Forward Blocking Current DRM V Peak Repetitive Reverse Off−State Voltage RRM I Peak Reverse Blocking Current RRM V Maximum On−State Voltage TM I Holding Current H Quadrant II (−) I GATE I − GT Quadrant III (− ...

Page 4

CONDUCTION ANGLE 90 0 0.5 1.0 1.5 2.0 2 RMS ON-STATE CURRENT (AMPS) T(RMS) Figure 1. RMS Current Derating 100 TYPICAL @ MAXIMUM ...

Page 5

MT2 NEGATIVE 2.0 MT2 POSITIVE 1.0 0 -40 -25 -10 5 JUNCTION TEMPERATURE ( C) J Figure 7. Typical Holding Current versus Junction Temperature MAC4DLM 10 ...

Page 6

... 0.13 (0.005) M 5.80 0.228 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. PACKAGE DIMENSIONS DPAK CASE 369C ISSUE O −T− SEATING PLANE SOLDERING FOOTPRINT* 6.20 3.0 0.244 0.118 2.58 ...

Page 7

... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...

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