BTA16-600CW3G ON Semiconductor, BTA16-600CW3G Datasheet
BTA16-600CW3G
Specifications of BTA16-600CW3G
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BTA16-600CW3G Summary of contents
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... BTA16-600CW3G, BTA16-800CW3G Triacs Silicon Bidirectional Thyristors Designed for high performance full−wave ac control applications where high noise immunity and high commutating di/dt are required. Features • Blocking Voltage to 800 V • On-State Current Rating RMS at 25°C • Uniform Gate Trigger Currents in Three Quadrants • ...
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THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case (AC) Junction−to−Ambient Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 seconds ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Peak Repetitive Blocking Current (V = Rated Gate Open) D DRM ...
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... Voltage Current Characteristic of Triacs Symbol Parameter V Peak Repetitive Forward Off State Voltage DRM I Peak Forward Blocking Current DRM V Peak Repetitive Reverse Off State Voltage RRM I Peak Reverse Blocking Current RRM V Maximum On State Voltage TM I Holding Current H Quadrant (− GATE I − GT Quadrant III (− ...
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RMS ON‐STATE CURRENT (AMP) T(RMS) Figure 1. RMS Current Derating 1000 Typical @ T = 25°C J Typical ...
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−40 −25 − JUNCTION TEMPERATURE (°C) J Figure 6. Gate Trigger Current Variation 200 V RMS ADJUST FOR CHARGE TRIGGER ...
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... U 0.000 0.050 0.00 1.27 V 0.045 --- 1.15 --- Z --- 0.080 --- 2.04 STYLE 12: PIN 1. MAIN TERMINAL 1 2. MAIN TERMINAL 2 3. GATE 4. NOT CONNECTED ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative BTA16−600CW3/D ...