BTA12-600BW STMicroelectronics, BTA12-600BW Datasheet - Page 5

• Manufacturer Part Number: BTA12-600BW
• Description: TRIAC 600V 12A TO-220AB
• Manufacturer: STMicroelectronics
• Series: Snubberless™r

Specifications of BTA12-600BW

• Triac Type: Alternistor - Snubberless
• Mounting Type: Through Hole
• Configuration: Single
• Current - Hold (ih) (max): 50mA
• Voltage - Off State: 600V
• Current - Gate Trigger (igt) (max): 50mA
• Current - Non Rep. Surge 50, 60hz (itsm): 120A, 126A
• Current - On State (it (rms)) (max): 12A
• Voltage - Gate Trigger (vgt) (max): 1.3V
• Package / Case: TO-220-3
• Current - On State (it (rms) (max): 12A
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 497-2396; 497-2396-5

BTA12, BTB12, T12xx
Figure 7.
Figure 9.
Figure 11. Relative variation of critical rate of
6
5
4
3
2
1
0
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
1000
100
0
10
(dI/dt)c [T ] /
0.1
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
0.01
B
I
TSM
C
dI/dt limitation:
T1210/SW
(A), I t (A s)
50A/µs
j
25
2
Non-repetitive surge peak on-state
current for a sinusoidal pulse with
width t
value of I
Relative variation of critical rate of
decrease of main current versus
(dV/dt)c (typical values)
(BW/CW/T1210/T1235)
decrease of main current versus
junction temperature
(dI/dt)c [T s
2
1.0
0.10
p
(dV/dt)c (V/µs)
j
50
< 10 ms and corresponding
pecified]
2
t
t (ms)
T (°C)
p
j
75
10.0
1.00
I
TSM
T1235/T1250/CW/BW
100
I t
2
T initial=25°C
j
10.00
100.0
125
Figure 8.
Figure 10. Relative variation of critical rate of
Figure 12. D
80
70
60
50
40
30
20
10
2.5
2.0
1.5
1.0
0.5
0.0
0
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
-40
R
I
0.1
GT H L
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
th(j-a)
,I ,I [T ] /
4
-20
D PAK
(°C/W)
2
I
TW
H
& I
L
j
8
I
Figure 8: Relative variation of gate
trigger current, holding current and
latching current versus junction
temperature (typical values)
decrease of main current versus
(dV/dt)c (typical values) (TW)
to ambient versus copper surface
under tab (printed circuit board
FR4, copper thickness: 35 µm)
GT
0
I
2
GT H L
PAK thermal resistance junction
12
,I ,I [T =25°C]
20
1.0
(dV/dt)c (V/µs)
16
j
40
S(cm²)
T (°C)
j
20
60
24
10.0
80
28
Characteristics
100
32
120
36
100.0
5/12
140
40