MMBV105GLT1 ON Semiconductor, MMBV105GLT1 Datasheet
MMBV105GLT1
Manufacturer Part Number
MMBV105GLT1
Description
DIODE TUNING SS 30V SOT23
Manufacturer
ON Semiconductor
Datasheet
1.MMBV105GLT1G.pdf
(3 pages)
Specifications of MMBV105GLT1
Capacitance @ Vr, F
2.8pF @ 25V, 1MHz
Capacitance Ratio
6.5
Capacitance Ratio Condition
C3/C25
Voltage - Peak Reverse (max)
30V
Diode Type
Single
Q @ Vr, F
250 @ 3V, 50MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
MMBV105GLT1OSCT
Available stocks
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Part Number
Manufacturer
Quantity
Price
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Part Number:
MMBV105GLT1
Manufacturer:
ON
Quantity:
50 700
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MMBV105GLT1
Manufacturer:
TI
Quantity:
66
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MMBV105GLT1
Manufacturer:
MOTOROLA/摩托罗拉
Quantity:
20 000
Company:
Part Number:
MMBV105GLT1G
Manufacturer:
ON Semiconductor
Quantity:
2 800
Company:
Part Number:
MMBV105GLT1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
MMBV105GLT1G
Manufacturer:
ON/安森美
Quantity:
20 000
MMBV105GLT1G
Silicon Tuning Diode
frequency control and tuning applications. It provides solid−state
reliability in replacement of mechanical tuning methods.
Features
•
•
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2009
August, 2009 − Rev. 5
MAXIMUM RATINGS
Reverse Voltage
Forward Current
Device Dissipation @ T
Junction Temperature
Storage Temperature Range
This device is designed in the Surface Mount package for general
Compliant
Controlled and Uniform Tuning Ratio
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Derate above 25°C
Rating
A
(T
= 25°C
C
= 25°C unless otherwise noted)
Symbol
T
V
P
T
I
stg
F
R
D
J
−55 to +150
Value
+125
200
225
1.8
30
1
mW/°C
mAdc
Unit
mW
Vdc
°C
°C
†For information on tape and reel specifications,
MMBV105GLT1G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*Date Code orientation and/or overbar may
Device
vary depending upon manufacturing location.
(Note: Microdot may be in either location)
ORDERING INFORMATION
M4E = Specific Device Code
M
G
Cathode
MARKING DIAGRAM
http://onsemi.com
3
SOT−23 (TO−236)
= Date Code*
= Pb−Free Package
1
1
(Pb−Free)
Package
CASE 318
SOT−23
STYLE 8
M4EM G
2
Publication Order Number:
G
3
3,000 / Tape & Reel
Anode
MMBV105GLT1/D
1
Shipping
†
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MMBV105GLT1 Summary of contents
Page 1
... ORDERING INFORMATION Device Package Shipping MMBV105GLT1G SOT−23 3,000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: MMBV105GLT1/D † ...
Page 2
... ELECTRICAL CHARACTERISTICS Characteristic Reverse Breakdown Voltage ( mAdc) R Reverse Voltage Leakage Current ( Vdc) R Device Type MMBV105GLT1 8.0 6 1.0 MHz T = 25°C A 4.0 2.0 0 0.3 0.5 1.0 2.0 3 REVERSE VOLTAGE (VOLTS) R Figure 1. Diode Capacitance 1.04 1.03 1.02 1.01 1.00 0.99 0.98 0.97 0. 25° ...
Page 3
... ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MMBV105GLT1/D ...