SI3210M-E-GMR Silicon Laboratories Inc, SI3210M-E-GMR Datasheet - Page 116

• Manufacturer Part Number: SI3210M-E-GMR
• Manufacturer: Silicon Laboratories Inc

Specifications of SI3210M-E-GMR

• Lead Free Status / RoHS Status: Supplier Unconfirmed

Si3210/Si3211
116
Bit
4
3
2
1
0
HYSTEN
ZSEXT
SWDB
DCFIL
Name
LCVE
Impedance Internal Reference Resistor Disable.
When enabled, this bit removes the internal reference resistor used to synthesize ac
impedances for 600 + 2.1 µF and 900 + 2.16 µF so that an external resistor reference
may be used.
0 = Internal resistor used to generate 600 + 2.1 µF and 900 + 2.16 µF impedances.
1 = Internal resistor removed from circuit.
Battery Switch Debounce (Si3211 only).
When enabled, this bit allows debouncing of the battery switching circuit only when tran-
sitioning from V
0 = No debounce used.
1 = 60 ms debounce period used.
Si3210 = Reserved.
Voltage-Based Loop Closure.
Enables loop closure to be determined by the TIP-to-RING voltage rather than loop cur-
rent.
0 = Loop closure determined by loop current.
1 = Loop closure determined by TIP-to-RING voltage.
DC-DC Converter Squelch (Si3210 only).
When enabled, this bit squelches noise in the audio band from the dc-dc converter con-
trol loop.
0 = Voice band squelch disabled.
1 = Voice band squelch enabled.
Loop Closure Hysteresis Enable.
When enabled, this bit allows hysteresis to the loop closure calculation. The upper and
lower hysteresis thresholds are defined by indirect registers 28 and 43, respectively.
0 = Loop closure hysteresis disabled.
1 = Loop closure hysteresis enabled.
BATH
to V
BATL
Rev. 1.45
external battery supplies (EXTBAT = 1).
Function