Mechanical Data
Electrical Characteristics
Features
Maximum Ratings
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Base Current
Power Dissipation at T
Operating and Storage Temperature Range
DC Current Gain
Thermal Resistance, Junction to Ambient Air
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Collector Cutoff Current
Emitter Cutoff Current
Gain Bandwidth Product
Collector-Base Capacitance
Emitter-Base Capacitance
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Notes:
DS30373 Rev. 6 - 2
Ideally Suited for Automated Insertion
For Switching and AF Amplifier Applications
Ultra-Small Surface Mount Package
Lead Free/RoHS Compliant (Note 2)
"Green" Device (Note 4 and 5)
Case: SOT-363
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy
42 leadframe).
Terminal Connections: See Diagram
Marking: K3W (See Page 3)
Ordering Information (See Page 3)
Weight: 0.006 grams
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
2. No purposefully added lead.
3. Short duration pulse test used to minimize self-heating effect.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
SB
Characteristic
= 50°C
Characteristic
@T
A
= 25°C unless otherwise specified
@T
A
= 25°C unless otherwise specified
(Note 3)
(Note 3) V
(Note 3) V
(Note 3)
(Note 1)
(Note 1)
(Note 1)
(Note 1)
(Note 1)
Symbol
www.diodes.com
CE(SAT)
BE(SAT)
C
C
R
DUAL PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR
I
I
I
V
h
CBO
CBO
EBO
CBO
EBO
f
θ JA
FE
BE
T
K
J
1 of 3
C
E
2
2
TOP VIEW
-580
Min
220
100
Symbol
T
—
—
—
—
—
—
—
A
H
B
B
V
V
V
j
, T
1
2
I
I
P
CBO
CEO
EBO
CM
BM
I
D
C
d
STG
C
E
1
1
F
-700
-665
Typ
—
—
—
—
—
—
—
—
—
11
B C
L
Max
-100
-400
-750
-100
475
625
-4.0
-15
—
—
—
3
-55 to +125
Value
M
-100
-200
-200
-5.0
200
°C/W
-50
-45
MHz
Unit
mV
mV
mV
nA
µA
nA
pF
pF
—
V
Note 1
I
I
I
V
V
V
V
V
f = 100MHz
V
V
C
C
C
CE
CE
CB
CB
EB
CE
CB
EB
= -10mA, I
= -100mA, I
= -10mA, I
= -5.0V, I
= -5.0V, I
= -30V, I
= -30V, T
= -5.0V, I
= -5.0V, I
= -10V, f = 1.0MHz
= -0.5V, f = 1.0MHz
All Dimensions in mm
Dim
BC857BS
M
A
B
C
D
F
H
K
L
α
J
Test Condition
SOT-363
B
B
E
C
C
C
C
j
B
0.10
1.15
2.00
0.30
1.80
0.90
0.25
0.10
= -0.5mA
= -0.5mA
= 0
= 150°C
Min
0.65 Nominal
= 0
= -2.0mA
= -2.0mA
= -10mA,
⎯
0°
= -5.0mA
© Diodes Incorporated
Unit
mW
mA
mA
mA
°C
V
V
V
BC857BS
Max
0.30
1.35
2.20
0.40
2.20
0.10
1.00
0.40
0.25
8°