MCP14E5T-E/MF Microchip Technology, MCP14E5T-E/MF Datasheet

MCP14E5T-E/MF

Manufacturer Part Number

MCP14E5T-E/MF

Description

IC,Dual MOSFET Driver,CMOS,LLCC,8PIN,PLASTIC

Manufacturer

Microchip Technology

Type

Low Sider

Datasheet

1.MCP14E5-EP.pdf (26 pages)

Specifications of MCP14E5T-E/MF

Configuration

Low-Side

Input Type

Inverting and Non-Inverting

Delay Time

46ns

Current - Peak

Number Of Configurations

Number Of Outputs

Voltage - Supply

4.5 V ~ 18 V

Operating Temperature

-40°C ~ 125°C

Mounting Type

Surface Mount

Package / Case

8-DFN

Rise Time

30 ns

Fall Time

30 ns

Supply Voltage (min)

4.5 V

Supply Current

2 mA

Maximum Operating Temperature

+ 125 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 40 C

Number Of Drivers

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

High Side Voltage - Max (bootstrap)

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

Other names

MCP14E5T-E/MFTR

Current page: 1 of 26
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4.0A Dual High-Speed Power MOSFET Drivers With Enable

Features

• High Peak Output Current: 4.0A (typical)

• Independent Enable Function for Each Driver

• Low Shoot-Through/Cross-Conduction Current in

• Wide Input Supply Voltage Operating Range:

• High Capacitive Load Drive Capability:

• Short Delay Times: 50 ns (typical)

• Latch-Up Protected: Will Withstand 1.5A Reverse

• Logic Input Will Withstand Negative Swing Up To

• Space-Saving Packages:

Applications

• Switch Mode Power Supplies

• Pulse Transformer Drive

• Line Drivers

• Motor and Solenoid Drive

Package Types

Output

Output Stage

- 4.5V to 18V

- 2200 pF in 15 ns (typical)

- 5600 pF in 26 ns (typical)

Current

- 8-Lead 6x5 DFN, PDIP, SOIC

ENB_A

GND

IN A

IN B

PDIP/SOIC

8-Pin

MCP14E3

Note 1: Exposed pad of the DFN package is electrically isolated.

ENB_B

OUT A

OUT B

MCP14E4

MCP14E3/MCP14E4/MCP14E5

ENB_B

OUT A

OUT B

MCP14E5

ENB_B

OUT A

OUT B

ENB_A

GND

IN A

IN B

General Description

The MCP14E3/MCP14E4/MCP14E5 devices are a

family of 4.0A buffers/MOSFET drivers. Dual-inverting,

dual-noninvertering, and complementary outputs are

standard logic options offered.

The

capable of operating from a 4.5V to 18V single power

supply and can easily charge and discharge 2200 pF

gate capacitance in under 15 ns (typical). They provide

low impedance in both the ON and OFF states to

ensure the MOSFET’s intended state will not be

affected, even by large transients. The MCP14E3/

MCP14E4/MCP14E5 inputs may be driven directly

from either TTL or CMOS (2.4V to 18V).

Additional

MCP14E5 outputs is allowed by the use of separate

enable functions. The ENB_A and ENB_B pins are

active high and are internally pulled up to V

maybe left floating for standard operation.

The MCP14E3/MCP14E4/MCP14E5 dual-output 4.0A

driver family is offered in both surface-mount and pin-

through-hole packages with a -40°C to +125°C

temperature rating. The low thermal resistance of the

thermally enhanced DFN package allows for greater

power dissipation capability for driving heavier

capacitive or resistive loads.

These devices are highly latch-up resistant under any

conditions within their power and voltage ratings. They

are not subject to damage when up to 5V of noise

spiking (of either polarity) occurs on the ground pin.

They can accept, without damage or logic upset, up to

1.5A of reverse current being forced back into their

outputs. All terminals are fully protect against

Electrostatic Discharge (ESD) up to 4 kV.

6x5 DFN

MCP14E3/MCP14E4/MCP14E5

8-Pin

control

(1)

MCP14E3

ENB_B

OUT A

OUT B

the

MCP14E4

ENB_B

OUT A

OUT B

MCP14E3/MCP14E4/

DS22062B-page 1

MCP14E5

drivers

ENB_B

OUT A

OUT B

. The pins

are

Related parts for MCP14E5T-E/MF

MCP14E5T-E/MF Summary of contents

Page 1

... OUT B OUT B Note 1: Exposed pad of the DFN package is electrically isolated. © 2008 Microchip Technology Inc. General Description The MCP14E3/MCP14E4/MCP14E5 devices are a family of 4.0A buffers/MOSFET drivers. Dual-inverting, dual-noninvertering, and complementary outputs are standard logic options offered. The MCP14E3/MCP14E4/MCP14E5 capable of operating from a 4.5V to 18V single power supply and can easily charge and discharge 2200 pF gate capacitance in under 15 ns (typical) ...

Page 2

... MCP14E3/MCP14E4/MCP14E5 Functional Block Diagram V DD Internal Pull-up Enable Input Effective 4.7 V Input (Each Input) GND DS22062B-page 2 Inverting Non-inverting 4.7 V Dual Inverting MCP14E3 MCP14E4 Dual Noninverting MCP14E5 One Inverting, One Noninverting V DD Output © 2008 Microchip Technology Inc. ...

Page 3

... Tested during characterization, not production tested. 3: Package power dissipation is dependent on the copper pad area on the PCB. © 2008 Microchip Technology Inc. MCP14E3/MCP14E4/MCP14E5 † Notice: Stresses above those listed under "Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational sections of this specification is not intended ...

Page 4

... V ENB_A = ENB_B = Low — 1.00 1. ENB_A = ENB_B = Low ≤ 18V. Conditions = 3V 3V, IN_A IN_B = 0V 0V, IN_A IN_B = 3V 0V, IN_A IN_B = 0V 3V, IN_A IN_B = 3V 3V, IN_A IN_B = 0V 0V, IN_A IN_B = 3V 0V, IN_A IN_B = 0V 3V, IN_A IN_B © 2008 Microchip Technology Inc. ...

Page 5

... Propagation Delay Time t D4 Power Supply Supply Voltage V DD Supply Current Note 1: Switching times ensured by design. © 2008 Microchip Technology Inc. MCP14E3/MCP14E4/MCP14E5 Min Typ Max Units 2.4 — — V — — 0.8 V –10 — +10 µA V – 0.025 — — — — ...

Page 6

... J T –65 — +150 A θ — 35.7 — JA θ — 89.3 — JA θ — 149.5 — JA ≤ 18V. DD Units Conditions °C °C °C °C/W Typical four-layer board with vias to ground plane °C/W °C/W © 2008 Microchip Technology Inc. ...

Page 7

... Capacitive Load (pF) FIGURE 2-2: Rise Time vs. Capacitive Load 18V FALL -40 -25 - 110 125 Temperature (°C) FIGURE 2-3: Rise and Fall Times vs. Temperature. © 2008 Microchip Technology Inc. MCP14E3/MCP14E4/MCP14E5 ≤ 18V. DD 120 10,000 pF 90 6,800 pF 100 FIGURE 2-4: Voltage. 60 12V 18V 20 ...

Page 8

... FIGURE 2-11: Temperature 125° 25° FIGURE 2-12: Low) vs. Supply Voltage 110 125 Temperature (°C) Propagation Delay Time vs. Input = 1 Input = 110 125 Temperature (°C) Quiescent Current vs (MCP14E3 (MCP14E4 Supply Voltage (V) Output Resistance (Output © 2008 Microchip Technology Inc. ...

Page 9

... Capacitive Load kHz DD 30 100 kHz 25 400 kHz 200 kHz 20 15 650 kHz 100 1000 Capacitive Load (pF) FIGURE 2-15: Supply Current vs. Capacitive Load. © 2008 Microchip Technology Inc. MCP14E3/MCP14E4/MCP14E5 ≤ 18V. DD 120 V 50 kHz DD 100 10000 10 FIGURE 2-16: Frequency 12V DD 60 ...

Page 10

... For a single driver, divide the stated value 12V DD For a signal transition of a single driver, divide the state value by 4. FIGURE 2-23: Supply Voltage 12V 110 125 Temperature (°C) Enable Hysteresis vs Supply Voltage (V) Crossover Energy vs. © 2008 Microchip Technology Inc. ...

Page 11

... Ground is the device return pin. The ground pin(s) should have a low impedance connection to the bias supply source return. High peak currents will flow out the ground pin(s) when the capacitive load is being discharged. © 2008 Microchip Technology Inc. MCP14E3/MCP14E4/MCP14E5 Table 3-1. Output A Enable ...

Page 12

... Ceramic Output C = 2200 pF L MCP14E4 (1/2 MCP14E5) 90% 90% 90 10% 10% Non-Inverting Driver Timing so DD (2.4V typical), that driver EN_H (2.0V typical), that driver output is dis- Table 4-1 for enable and t , are D3 D4 Figure 4-3. © 2008 Microchip Technology Inc. ...

Page 13

... PCB trace loop area and inductance should be minimized by the use of ground planes or trace under MOSFET gate drive signals, separate analog and power grounds, and local driver decoupling. © 2008 Microchip Technology Inc. MCP14E3/MCP14E4/MCP14E5 MCP14E3 IN B OUT A OUT B ...

Page 14

... MOSFET driver output transitions because for a very short period of time both MOSFETs in the output stage are on simultaneously. This cross-conduction current leads to a power dissipation describes as: EQUATION 4-4: × × Where Cross-conduction constant (A*sec Switching frequency V = MOSFET driver supply voltage DD DS22062B-page × DD © 2008 Microchip Technology Inc. ...

Page 15

... Note: In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information. © 2008 Microchip Technology Inc. MCP14E3/MCP14E4/MCP14E5 : Example MCP14E3 ...

Page 16

... BSC D1 4.67 BSC D2 3.85 4.00 E 5.99 BSC E1 5.74 BSC E2 2.16 2.31 b 0.35 0.40 L 0.50 0.60 K 0.20 – φ – – Microchip Technology Drawing C04-113B NOTE 1 MAX 1.00 0.80 0.05 4.15 2.46 0.47 0.75 – 12° © 2008 Microchip Technology Inc. ...

Page 17

... Significant Characteristic. 3. Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010" per side. 4. Dimensioning and tolerancing per ASME Y14.5M. BSC: Basic Dimension. Theoretically exact value shown without tolerances. © 2008 Microchip Technology Inc. MCP14E3/MCP14E4/MCP14E5 E1 2 ...

Page 18

Page 19

... Microchip Technology Inc. MCP14E3/MCP14E4/MCP14E5 DS22062B-page 19 ...

Page 20

Page 21

... APPENDIX A: REVISION HISTORY Revision B (April 2008) The following is the list of modifications: 1. Correct examples in Product identification System page. Revision A (September 2007) • Original Release of this Document. © 2008 Microchip Technology Inc. MCP14E3/MCP14E4/MCP14E5 DS22062B-page 21 ...

Page 22

Page 23

... All package offerings are Pb Free (Lead Free) © 2008 Microchip Technology Inc. MCP14E3/MCP14E4/MCP14E5 Examples: a) MCP14E3-E/MF: b) MCP14E3-E/P: c) MCP14E3-E/SN: a) MCP14E4-E/MF: b) MCP14E4-E/P: c) MCP14E4T-E/SN: Tape and Reel, a) MCP14E5T-E/MF: Tape and Reel, b) MCP14E5-E/P: c) MCP14E5-E/SN: . 4.0A Dual Inverting MOSFET Driver, 8LD DFN package. 4.0A Dual Inverting MOSFET Driver, 8LD PDIP package . ...

Page 24

Page 25

... PowerMate, PowerTool, REAL ICE, rfLAB, Select Mode, Total Endurance, UNI/O, WiperLock and ZENA are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. All other trademarks mentioned herein are property of their respective companies. ...

Page 26

... Fax: 886-3-572-6459 Taiwan - Kaohsiung Tel: 886-7-536-4818 Fax: 886-7-536-4803 Taiwan - Taipei Tel: 886-2-2500-6610 Fax: 886-2-2508-0102 Thailand - Bangkok Tel: 66-2-694-1351 Fax: 66-2-694-1350 © 2008 Microchip Technology Inc. EUROPE Austria - Wels Tel: 43-7242-2244-39 Fax: 43-7242-2244-393 Denmark - Copenhagen Tel: 45-4450-2828 Fax: 45-4485-2829 France - Paris Tel: 33-1-69-53-63-20 ...

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