MIC4100BM Micrel Inc, MIC4100BM Datasheet - Page 13

• Manufacturer Part Number: MIC4100BM
• Description: IC,Dual MOSFET Driver,SOP,8PIN,PLASTIC
• Manufacturer: Micrel Inc

Specifications of MIC4100BM

• Configuration: Half Bridge
• Input Type: Non-Inverting
• Delay Time: 27ns
• Current - Peak: 2A
• Number Of Configurations: 1
• Number Of Outputs: 2
• High Side Voltage - Max (bootstrap): 118V
• Voltage - Supply: 9 V ~ 16 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Gate Driver Power Dissipation
Power dissipation in the output driver stage is mainly
caused by charging and discharging the gate to source
and gate to drain capacitance of the external MOSFET.
Figure 7 shows a simplified equivalent circuit of the
MIC4100 driving an external MOSFET.
C
Micrel, Inc.
March 2006
B
HI
LI
Level
shift
Vdd
Vdd
external
diode
Vss
Ron
Roff
Figure 6
HS
Figure 7
HB
HB
HS
HO
HO
C
LO
B
Rg
Rg_fet
Cgd
Cgs
External
Vin
FET
13
Dissipation during the external MOSFET Turn-On
Energy from capacitor C
capacitance of the MOSFET (Cgd and Cgs). The energy
delivered to the MOSFET is dissipated in the three
resistive components, Ron, Rg and Rg_fet. Ron is the on
resistance of the upper driver MOSFET in the MIC4100.
Rg is the series resistor (if any) between the driver IC and
the MOSFET. Rg_fet is the gate resistance of the
MOSFET. Rg_fet is usually listed in the power MOSFET’s
specifications. The ESR of capacitor C
of the connecting etch can be ignored since they are much
less than Ron and Rg_fet.
The effective capacitance of Cgd and Cgs is difficult to
calculate since they vary non-linearly with Id, Vgs, and
Vds. Fortunately, most power MOSFET specifications
include a typical graph of total gate charge vs. Vgs. Figure
8 shows a typical gate charge curve for an arbitrary power
MOSFET. This chart shows that for a gate voltage of 10V,
the MOSFET requires about 23.5nC of charge. The energy
dissipated by the resistive components of the gate drive
circuit during turn-on is calculated as:
The same energy is dissipated by Roff, Rg and Rg_fet
when the driver IC turns the MOSFET off. Assuming Ron
is approximately equal to Roff, the total energy and power
dissipated by the resistive drive elements is:
Q
so
Ciss
E
but
E
where
=
=
=
1/2
C
1
2
is
×
×
the
×
Ciss
V
Qg
10
8
6
4
2
0
total
0
×
×
V
V
V
I
D
gate
DS
gs
gs
= 6.9A
Q g - Total Gate Charge (nC)
2
= 50V
5
capacitanc
Figure 8
B
Gate Charge
is used to charge up the input
10
15
e
of
B
and the resistance
the
20
MOSFET
M9999-031506
MIC4100/1
25