MIC94031YM4 TR Micrel Inc, MIC94031YM4 TR Datasheet - Page 3

• Manufacturer Part Number: MIC94031YM4 TR
• Description: Dual P-Channel MOSFET ( )
• Manufacturer: Micrel Inc
• Series: TinyFET®r

Specifications of MIC94031YM4 TR

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 450 mOhm @ 100mA, 10V
• Drain To Source Voltage (vdss): 16V
• Current - Continuous Drain (id) @ 25° C: 1A
• Vgs(th) (max) @ Id: 1.4V @ 250µA
• Input Capacitance (ciss) @ Vds: 100pF @ 12V
• Power - Max: 568mW
• Mounting Type: Surface Mount
• Package / Case: SOT-143, SOT-143B, TO-253AA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 576-1327-2

Absolute Maximum Ratings
Voltage and current values are negative. Signs not shown for clarity.
Drain-to-Source Voltage (pulse).....................................16V
Gate-to-Source Voltage (pulse). ....................................16V
Continuous Drain Current
Operating Junction Temperature ..............–55°C to +150°C
Storage Temperature ................................–55°C to +150°C
Electrical Characteristics
Voltage and current values are negative. Signs not shown for clarity.
Notes:
1. T
2. ESD gate protection diode conducts during positive gate-to-source voltage excursions.
3. MIC94030 only.
4. MIC94031 only.
5. Pulse Test: Pulse Width ≤ 80µsec, Duty Cycle ≤ 0.5%.
Micrel, Inc.
Symbol
V
V
I
R
C
I
I
R
g
July 2006
GSS
DSS
D(ON)
FS
BDSS
GS
GS
ISS
DS(ON)
A
T
T
= 25°C unless noted. Substrate connected to source for all conditions.
A
A
= 25°C ...................................................................1A
= 100°C ..............................................................0.5A
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Gate-Source Resistor
Input Capacitance
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resist
Forward Transconductance
(1)
Condition (Note 1)
V
V
V
V
V
V
V
V
V
V
V
V
GS
DS
DS
DS
GS
DS
DS
DS
GS
GS
GS
DS
= V
= 0V, V
= 0V, V
= 12V, V
= 12V, V
= 10V, V
= 10V, I
= 0V, I
= 0V, V
= 10V, I
= 4.5V, I
= 2.7V, I
GS
, I
D
D
GS
GS
DS
D
D
= 250µA
D
D
GS
GS
GS
= 250µA
= 100mA
= 200mA, Note 5
= 12V, Note 2, Note 3
= 12V, Note 2, Note 4
= 12V
= 100mA
= 100mA
= 0V
= 0V, T
= 10V, Note 5
3
Total Power Dissipation
Thermal Resistance
Lead Temperature
J
T
T
θ
θ
1/16” from case, 10s.......................................... +300°C
= 125°C
A
A
JA
JC
= 25°C...........................................................568mW
= 100°C.........................................................227mW
....................................................................220°C/W
....................................................................130°C/W
13.5
Min
500
0.6
MIC94030/MIC94031
0.010
0.45
0.75
1.20
Typ
750
100
480
1.0
6.3
M9999-071106
1000
Max
1.00
250
1.4
25
1
Units
mS
µA
kΩ
µA
µA
pF
Ω
Ω
Ω
V
V
A