SSM2212RZ-RL

Manufacturer Part NumberSSM2212RZ-RL
DescriptionLow Noise,Matched Dual NPN Transistor
ManufacturerAnalog Devices Inc
SSM2212RZ-RL datasheet
 


Specifications of SSM2212RZ-RL

Transistor Type2 NPN (Dual)Current - Collector (ic) (max)20mA
Voltage - Collector Emitter Breakdown (max)40VVce Saturation (max) @ Ib, Ic200mV @ 100µA, 1mA
Current - Collector Cutoff (max)500pAFrequency - Transition200MHz
Mounting TypeSurface MountPackage / Case8-SOIC (0.154", 3.90mm Width)
Lead Free Status / RoHS StatusLead free / RoHS CompliantDc Current Gain (hfe) (min) @ Ic, Vce-
Power - Max-  
1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
6
Page 6
7
Page 7
8
Page 8
9
Page 9
10
Page 10
11
12
Page 1/12

Download datasheet (254Kb)Embed
Next
FEATURES
Very low voltage noise: 1 nV/√Hz maximum @ 100 Hz
Excellent current gain match: 0.5%
Low offset voltage (V
): 200 μV maximum
OS
Outstanding offset voltage drift: 0.03 μV/°C
High gain bandwidth product: 200 MHz
GENERAL DESCRIPTION
The SSM2212 is a dual, NPN-matched transistor pair that is
specifically designed to meet the requirements of ultralow noise
audio systems.
With its extremely low input base spreading resistance (rbb' is
typically 28 Ω) and high current gain (h
at I
= 1 mA), the SSM2212 can achieve outstanding signal-to-
C
noise ratios. The high current gain results in superior
performance compared to systems incorporating commercially
available monolithic amplifiers.
Excellent matching of the current gain (Δh
low V
of less than 10 μV typical make the SSM2212 ideal for
OS
symmetrically balanced designs, which reduce high-order
amplifier harmonic distortion.
B
Rev.
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
Stability of the matching parameters is guaranteed by protection
diodes across the base-emitter junction. These diodes prevent
degradation of beta and matching characteristics due to reverse
biasing of the base-emitter junction.
typically exceeds 600
The SSM2212 is also an ideal choice for accurate and reliable
FE
current biasing and mirroring circuits. Furthermore, because a
current mirror’s accuracy degrades exponentially with mismatches
of V
BE
does not need offset trimming in most circuit applications.
) to about 0.5% and
The SSM2212 performance and characteristics are guaranteed
FE
over the extended temperature range of −40°C to +85°C.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
Fax: 781.461.3113
Audio, Dual-Matched
NPN Transistor
SSM2212
PIN CONFIGURATION
C
C
1
8
1
2
B
B
2
7
1
2
E
E
3
6
1
2
SSM2212
NIC
NIC
4
5
NIC = NO INTERNAL CONNECTION
Figure 1. 8-Lead SOIC_N
between transistor pairs, the low V
of the SSM2212
OS
2010
©
Analog Devices, Inc. All rights reserved.
www.analog.com