SST25LF020A-33-4C-SAE-T Microchip Technology, SST25LF020A-33-4C-SAE-T Datasheet - Page 10

• Manufacturer Part Number: SST25LF020A-33-4C-SAE-T
• Description: 3.0V To 3.6V 2Mbit SPI Serial Flash 8 SOIC 3.90mm (.150") T/R
• Manufacturer: Microchip Technology

Specifications of SST25LF020A-33-4C-SAE-T

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 2M (256K x 8)
• Speed: 33MHz
• Interface: SPI Serial
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Data Sheet
High-Speed-Read (33 MHz)
The High-Speed-Read instruction supporting up to 33 MHz
is initiated by executing an 8-bit command, 0BH, followed
by address bits [A
remain active low for the duration of the High-Speed-Read
cycle. See Figure 6 for the High-Speed-Read sequence.
Following a dummy byte (8 clocks input dummy cycle), the
High-Speed-Read instruction outputs the data starting from
the specified address location. The data output stream is
continuous through all addresses until terminated by a low
©2010 Silicon Storage Technology, Inc.
SCK
CE#
FIGURE 6: High-Speed-Read Sequence
SO
SI
MODE 3
MODE 0
Note: X = Dummy Byte: 8 Clocks Input Dummy Cycle (V
MSB
0 1 2 3 4 5 6 7 8
23
-A
0
] and a dummy byte. CE# must
0B
HIGH IMPEDANCE
MSB
ADD.
15 16
ADD.
23 24
ADD.
10
IL
or V
31 32
to high transition on CE#. The internal address pointer will
automatically increment until the highest memory address
is reached. Once the highest memory address is reached,
the address pointer will automatically increment to the
beginning (wrap-around) of the address space, i.e. for
2 Mbit density, once the data from address location
03FFFFH has been read, the next output will be from
address location 000000H.
IH
)
X
39 40
MSB
D
OUT
N
47 48
D
N+1
OUT
2 Mbit SPI Serial Flash
55 56
D
N+2
OUT
63 64
SST25LF020A
D
N+3
OUT
S71242-07-000
71 72
D
N+4
OUT
1242 F05.0
80
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