SST39SF040-55-4I-WHE Microchip Technology, SST39SF040-55-4I-WHE Datasheet - Page 12

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SST39SF040-55-4I-WHE

Manufacturer Part Number
SST39SF040-55-4I-WHE
Description
4.5V To 5.5V 4Mbit Multi-Purpose Flash 32 TSOP 8x14 Mm TRAY
Manufacturer
Microchip Technology
Datasheet

Specifications of SST39SF040-55-4I-WHE

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
4M (512K x 8)
Speed
55ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Package / Case
32-TFSOP (0.315", 8.00mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data Sheet
©2010 Silicon Storage Technology, Inc.
ADDRESS A
FIGURE 9: Toggle Bit Timing Diagram
FIGURE 10: WE# Controlled Sector-Erase Timing Diagram
ADDRESS A
DQ
WE#
MS-0
OE#
CE#
WE#
MS-0
OE#
DQ
CE#
7-0
6
Note: This device also supports CE# controlled Sector-Erase operation. The WE# and CE# signals are
Note: Toggle bit output is always high first.
interchageable as long as minimum timings are met. (See Table 10)
SA
A
A
A
A
5555
MS
MS
MS
MS
X
SW0
= Sector Address
= Most significant address
= A
T
AA
= Most significant address
= A
WP
16
16
for SST39SF010A, A
for SST39SF010A, A
2AAA
T
OEH
SW1
55
SIX-BYTE CODE FOR SECTOR-ERASE
T
CE
5555
Note
T
SW2
17
17
80
OE
for SST39SF020A, and A
for SST39SF020A, and A
SST39SF010A / SST39SF020A / SST39SF040
5555
1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash
SW3
12
AA
2AAA
SW4
55
18
18
for SST39SF040
for SST39SF040
SA
WITH SAME OUTPUTS
TWO READ CYCLES
X
SW5
30
T
SE
T
OES
S71147-09-000
1147 F07.1
1147 F08.1
01/10

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