SST39VF3201-70-4I-B3KE Microchip Technology, SST39VF3201-70-4I-B3KE Datasheet

SST39VF3201-70-4I-B3KE

Manufacturer Part Number

SST39VF3201-70-4I-B3KE

Description

2.7V To 3.6V 32Mbit Multi-Purpose Flash 48 TFBGA 6x8x1.2 Mm TRAY

Manufacturer

Microchip Technology

Datasheet

1.SST39VF1601-70-4C-B3KE.pdf (31 pages)

Specifications of SST39VF3201-70-4I-B3KE

Format - Memory

FLASH

Memory Type

FLASH

Memory Size

32M (2M x 16)

Speed

70ns

Interface

Parallel

Voltage - Supply

2.7 V ~ 3.6 V

Operating Temperature

-40°C ~ 85°C

Package / Case

48-TFBGA

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

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Company:

BOSTOCK HK LIMITED

Part Number:

SST39VF3201-70-4I-B3KE

Manufacturer:

Microchip Technology

Quantity:

10 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

SST39VF3201-70-4I-B3KE

Manufacturer:

SST

Quantity:

20 000

Company:

H&T Electronics

Part Number:

SST39VF3201-70-4I-B3KE

Quantity:

960

Company:

BOSTOCK HK LIMITED

Part Number:

SST39VF3201-70-4I-B3KE-T

Manufacturer:

Microchip Technology

Quantity:

10 000

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FEATURES:

• Organized as 1M x16: SST39VF1601/1602

• Single Voltage Read and Write Operations

• Superior Reliability

• Low Power Consumption (typical values at 5 MHz)

• Hardware Block-Protection/WP# Input Pin

• Sector-Erase Capability

• Block-Erase Capability

• Chip-Erase Capability

• Erase-Suspend/Erase-Resume Capabilities

• Hardware Reset Pin (RST#)

PRODUCT DESCRIPTION

The SST39VF160x and SST39VF320x devices are 1M

x16 and 2M x16, respectively, CMOS Multi-Purpose

Flash Plus (MPF+) manufactured with SST’s proprietary,

high performance CMOS SuperFlash technology. The

split-gate cell design and thick-oxide tunneling injector

attain better reliability and manufacturability compared

with alternate approaches. The SST39VF160x/320x write

(Program or Erase) with a 2.7-3.6V power supply. These

devices conform to JEDEC standard pinouts for x16

memories.

Featuring

SST39VF160x/320x devices provide a typical Word-Pro-

gram time of 7 µsec. These devices use Toggle Bit or

Data# Polling to indicate the completion of Program opera-

tion. To protect against inadvertent write, they have on-chip

hardware and Software Data Protection schemes.

Designed, manufactured, and tested for a wide spectrum of

applications, these devices are offered with a guaranteed

typical endurance of 100,000 cycles. Data retention is rated

at greater than 100 years.

S71223-05-000

– 2.7-3.6V

– Endurance: 100,000 Cycles (Typical)

– Greater than 100 years Data Retention

– Active Current: 9 mA (typical)

– Standby Current: 3 µA (typical)

– Auto Low Power Mode: 3 µA (typical)

– Top Block-Protection (top 32 KWord)

– Bottom Block-Protection (bottom 32 KWord)

– Uniform 2 KWord sectors

– Uniform 32 KWord blocks

for SST39VF1602/3202

for SST39VF1601/3201

16 Mbit / 32 Mbit / (x16) Multi-Purpose Flash Plus

high

SST39VF160x / 320x / 640x2.7V 16Mb / 32Mb / 64Mb (x16) MPF+ memories

2M x16: SST39VF3201/3202

performance

6/08

SST39VF1601 / SST39VF3201

SST39VF1602 / SST39VF3202

Word-Program,

the

The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.

• Security-ID Feature

• Fast Read Access Time:

• Latched Address and Data

• Fast Erase and Word-Program:

• Automatic Write Timing

• End-of-Write Detection

• CMOS I/O Compatibility

• JEDEC Standard

• Packages Available

• All non-Pb (lead-free) devices are RoHS compliant

The SST39VF160x/320x devices are suited for applica-

tions that require convenient and economical updating of

program, configuration, or data memory. For all system

applications, they significantly improve performance and

reliability, while lowering power consumption. They inher-

ently use less energy during Erase and Program than alter-

native flash technologies. The total energy consumed is a

function of the applied voltage, current, and time of applica-

tion. Since for any given voltage range, the SuperFlash

technology uses less current to program and has a shorter

erase time, the total energy consumed during any Erase or

Program operation is less than alternative flash technolo-

gies. These devices also improve flexibility while lowering

the cost for program, data, and configuration storage appli-

cations.

The SuperFlash technology provides fixed Erase and Pro-

gram times, independent of the number of Erase/Program

cycles that have occurred. Therefore the system software

or hardware does not have to be modified or de-rated as is

necessary with alternative flash technologies, whose

Erase and Program times increase with accumulated

Erase/Program cycles.

– SST: 128 bits; User: 128 bits

– 70 ns

– Sector-Erase Time: 18 ms (typical)

– Block-Erase Time: 18 ms (typical)

– Chip-Erase Time: 40 ms (typical)

– Word-Program Time: 7 µs (typical)

– Internal V

– Toggle Bits

– Data# Polling

– Flash EEPROM Pinouts and command sets

– 48-lead TSOP (12mm x 20mm)

– 48-ball TFBGA (6mm x 8mm)

Generation

These specifications are subject to change without notice.

MPF is a trademark of Silicon Storage Technology, Inc.

Data Sheet

Related parts for SST39VF3201-70-4I-B3KE

SST39VF3201-70-4I-B3KE Summary of contents

Page 1

... SST39VF1601 / SST39VF3201 SST39VF1602 / SST39VF3202 SST39VF160x / 320x / 640x2.7V 16Mb / 32Mb / 64Mb (x16) MPF+ memories FEATURES: • Organized as 1M x16: SST39VF1601/1602 2M x16: SST39VF3201/3202 • Single Voltage Read and Write Operations – 2.7-3.6V • Superior Reliability – Endurance: 100,000 Cycles (Typical) – Greater than 100 years Data Retention • ...

Page 2

... WE# or CE#, whichever occurs first. The Pro- gram operation, once initiated, will be completed within 10 ©2008 Silicon Storage Technology, Inc. 16 Mbit / 32 Mbit Multi-Purpose Flash Plus SST39VF1601 / SST39VF3201 SST39VF1602 / SST39VF3202 µs. See Figures 5 and 6 for WE# and CE# controlled Pro- gram operation timing diagrams and Figure 20 for flow- charts ...

Page 3

... Mbit / 32 Mbit Multi-Purpose Flash Plus SST39VF1601 / SST39VF3201 SST39VF1602 / SST39VF3202 To resume Sector-Erase or Block-Erase operation which has been suspended the system must issue Erase Resume command. The operation is executed by issuing one byte command sequence with Erase Resume command (30H) at any address in the last Byte sequence. ...

Page 4

... CFI data at the addresses given in Tables 7 through 10. The system must write the CFI Exit command to return to Read mode from the CFI Query mode. 4 SST39VF1601 / SST39VF3201 SST39VF1602 / SST39VF3202 any in-progress operation will terminate and RP , The contents ...

Page 5

... SST39VF1601 / SST39VF3201 SST39VF1602 / SST39VF3202 Product Identification The Product Identification mode identifies the devices as the SST39VF1601, SST39VF1602, SST39VF3201, or SST39VF3202, and manufacturer as SST. This mode may be accessed software operations. Users may use the Software Product Identification operation to identify the part (i.e., using the device ID) when using multiple manufacturers in the same socket ...

Page 6

... Mbit / 32 Mbit Multi-Purpose Flash Plus X-Decoder Address Buffer & Latches Control Logic Standard Pinout 9 10 Top View 11 12 Die SST39VF1601 / SST39VF3201 SST39VF1602 / SST39VF3202 SuperFlash Memory Y-Decoder I/O Buffers and Data Latches 1223 B1.0 SST39VF160x/320x A16 DQ15 45 DQ7 44 DQ14 43 DQ6 42 DQ13 41 DQ5 40 DQ12 39 ...

Page 7

... Mbit / 32 Mbit Multi-Purpose Flash Plus SST39VF1601 / SST39VF3201 SST39VF1602 / SST39VF3202 TOP VIEW (balls facing down) SST39VF1601/1602 6 A13 A12 A14 A15 A16 A10 A11 DQ7 4 WE# RST# NC A19 DQ5 3 NC WP# A18 NC DQ2 2 A7 A17 A6 A5 DQ0 FIGURE 3: pin assignments for 48-ball TFBGA ©2008 Silicon Storage Technology, Inc. ...

Page 8

... Mbit / 32 Mbit Multi-Purpose Flash Plus -A address lines will select the sector address lines will select the block for SST39VF3201/3202 20 OE# WE OUT High High OUT High OUT SST39VF1601 / SST39VF3201 SST39VF1602 / SST39VF3202 T4.2 1223 Address Sector or block address, XXH for Chip-Erase See Table 6 S71223-05-000 T5.0 1223 6/08 ...

Page 9

... F0H , but no other value, for Command sequence for SST39VF1601/1602, , but no other value, for Command sequence for SST39VF3201/3202, address lines address lines for SST39VF3201/3202 (Address range = 000000H to 000007H (Address range = 000010H to 000017H). ...

Page 10

... PP pin µ µs) N µs (00H = not supported ms) N times typical (2 N times typical N 1 times typical ( Bytes (15H = 21 MByte) N (00H = not supported) 10 SST39VF1601 / SST39VF3201 SST39VF1602 / SST39VF3202 ms µ times typical ( ms ms) S71223-05-000 T7.1 1223 T8.3 1223 T9.0 1223 6/08 ...

Page 11

... Mbit / 32 Mbit Multi-Purpose Flash Plus SST39VF1601 / SST39VF3201 SST39VF1602 / SST39VF3202 TABLE 10: Device Geometry Information for SST39VF3201/3202 Address Data Data 27H 0016H Device size = 2 28H 0001H Flash Device Interface description; 0001H = x16-only asynchronous interface 29H 0000H 2AH 0000H Maximum number of byte in multi-byte write = 2 ...

Page 12

... C capable in both non-Pb and with-Pb solder versions. ° C for 10 seconds; please consult the factory for the latest information 2.7-3.6V 2.7-3. SST39VF1601 / SST39VF3201 SST39VF1602 / SST39VF3202 DD DD S71223-05-000 +0.5V +2.0V 6/08 ...

Page 13

... Mbit / 32 Mbit Multi-Purpose Flash Plus SST39VF1601 / SST39VF3201 SST39VF1602 / SST39VF3202 TABLE 11: DC Operating Characteristics V Symbol Parameter I Power Supply Current DD 3 Read Program and Erase I Standby V Current Auto Low Power ALP I Input Leakage Current LI I Input Leakage Current LIW on WP# pin and RST# ...

Page 14

... Sector-Erase SE T Block-Erase BE T Chip-Erase SCE 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. ©2008 Silicon Storage Technology, Inc. 16 Mbit / 32 Mbit Multi-Purpose Flash Plus SST39VF1601 / SST39VF3201 SST39VF1602 / SST39VF3202 = 2.7-3.6V DD Min 500 50 Min ...

Page 15

... Mbit / 32 Mbit Multi-Purpose Flash Plus SST39VF1601 / SST39VF3201 SST39VF1602 / SST39VF3202 ADDRESS A MS-0 CE# OE WE# HIGH-Z DQ 15-0 Note Most significant address FIGURE 4: Read Cycle Timing Diagram 5555 ADDRESS WPH AS OE# CE# DQ XXAA 15-0 SW0 Note Most significant address WP# must be held in proper logic state (V ...

Page 16

... WORD (ADDR/DATA) for SST39VF1601/1602 and A for SST39VF3201/3202 µs prior to and 1 µs after the command sequence but no other value OEH T OE DATA# for SST39VF3201/3202 20 16 SST39VF1601 / SST39VF3201 SST39VF1602 / SST39VF3202 INTERNAL PROGRAM OPERATION STARTS 1223 F05.4 T OES DATA# DATA S71223-05-000 1223 F06.3 6/08 ...

Page 17

... Mbit / 32 Mbit Multi-Purpose Flash Plus SST39VF1601 / SST39VF3201 SST39VF1602 / SST39VF3202 ADDRESS A MS-0 CE# OE# WE# DQ and Note Most significant address FIGURE 8: Toggle Bits Timing Diagram ADDRESS A 5555 MS-0 5555 ADDRESS A MS-0 CE# CE# OE# OE WE# WE# XXAA DQ 15-0 XXAA DQ 15-0 SW0 SW0 Note: This device also supports CE# controlled Chip-Erase operation. The WE# and CE# signals are interchageable as long as minimum timings are met ...

Page 18

... SIX-BYTE CODE FOR SECTOR-ERASE 2AAA 5555 5555 2AAA XX55 XX80 XXAA XX55 SW1 SW2 SW3 SW4 for SST39VF3201/3202 µs prior to and 1 µs after the command sequence but no other value IH 18 SST39VF1601 / SST39VF3201 SST39VF1602 / SST39VF3202 XX50 SW5 1223 F09 XX30 SW5 1223 F10.5 S71223-05-000 6/08 ...

Page 19

... Mbit / 32 Mbit Multi-Purpose Flash Plus SST39VF1601 / SST39VF3201 SST39VF1602 / SST39VF3202 Three-Byte Sequence for Software ID Entry ADDRESS A 5555 2AAA 14-0 CE# OE WE# XXAA DQ 15-0 SW0 Note: Device ID = 234BH for 39VF1601, 234AH for 39VF1602, 235BH for 39VF3201, and 235AH for 39VF3202, WP# must be held in proper logic state (V ...

Page 20

... but no other value IL IH 5555 T IDA T WPH T AA XX55 XX88 SW1 SW2 for SST39VF3201/3202 µs prior to and 1 µs after the command sequence but no other value SST39VF1601 / SST39VF3201 SST39VF1602 / SST39VF3202 1223 F13.0 1223 F20.2 S71223-05-000 6/08 ...

Page 21

... Mbit / 32 Mbit Multi-Purpose Flash Plus SST39VF1601 / SST39VF3201 SST39VF1602 / SST39VF3202 T RP RST# CE#/OE# FIGURE 16: RST# Timing Diagram (When no internal operation is in progress RST# CE#/OE# FIGURE 17: RST# Timing Diagram (During Program or Erase operation) ©2008 Silicon Storage Technology, Inc. T RHR T RY End-of-Write Detection (Toggle-Bit) ...

Page 22

... Mbit / 32 Mbit Multi-Purpose Flash Plus V REFERENCE POINTS IT ) for a logic “1” and V (0 ILT DD ) and V (0 Input rise and fall times (10 TESTER 22 SST39VF1601 / SST39VF3201 SST39VF1602 / SST39VF3202 V OUTPUT OT 1223 F14.0 ) for a logic “0”. Measurement reference points ↔ 90%) are <5 ns. Note Test IT INPUT ...

Page 23

... Mbit / 32 Mbit Multi-Purpose Flash Plus SST39VF1601 / SST39VF3201 SST39VF1602 / SST39VF3202 FIGURE 20: Word-Program Algorithm ©2008 Silicon Storage Technology, Inc. Start Load data: XXAAH Address: 5555H Load data: XX55H Address: 2AAAH Load data: XXA0H Address: 5555H Load Word Address/Word Data Wait for end of Program ( ...

Page 24

... Data Sheet Internal Timer Program/Erase Initiated Wait SCE Program/Erase Completed FIGURE 21: Wait Options ©2008 Silicon Storage Technology, Inc. 16 Mbit / 32 Mbit Multi-Purpose Flash Plus SST39VF1601 / SST39VF3201 SST39VF1602 / SST39VF3202 Toggle Bit Program/Erase Initiated Read word Read same No word No Does DQ 6 match? Yes Program/Erase ...

Page 25

... Mbit / 32 Mbit Multi-Purpose Flash Plus SST39VF1601 / SST39VF3201 SST39VF1602 / SST39VF3202 CFI Query Entry Command Sequence Load data: XXAAH Address: 5555H Load data: XX55H Address: 2AAAH Load data: XX98H Address: 5555H Wait T IDA Read CFI data FIGURE 22: Software ID/CFI Entry Command Flowcharts ©2008 Silicon Storage Technology, Inc. ...

Page 26

... Silicon Storage Technology, Inc. 16 Mbit / 32 Mbit Multi-Purpose Flash Plus Software ID Exit/CFI Exit/Sec ID Exit Command Sequence Load data: XXF0H Address: 5555H Address: XXH Wait T IDA Return to normal Address: 5555H operation Wait T IDA operation X can but no other value 26 SST39VF1601 / SST39VF3201 SST39VF1602 / SST39VF3202 1223 F18.1 S71223-05-000 6/08 ...

Page 27

... Mbit / 32 Mbit Multi-Purpose Flash Plus SST39VF1601 / SST39VF3201 SST39VF1602 / SST39VF3202 Chip-Erase Command Sequence Load data: XXAAH Address: 5555H Load data: XX55H Address: 2AAAH Load data: XX80H Address: 5555H Load data: XXAAH Address: 5555H Load data: XX55H Address: 2AAAH Load data: XX10H Address: 5555H ...

Page 28

... Hardware Block Protection 1 = Bottom Boot-Block 2 = Top Boot-Block Device Density 160 = 16 Mbit 320 = 32 Mbit Voltage V = 2.7-3.6V Product Series 39 = Multi-Purpose Flash 1. Environmental suffix “E” denotes non-Pb solder. SST non-Pb solder devices are “RoHS Compliant”. 28 SST39VF1601 / SST39VF3201 SST39VF1602 / SST39VF3202 = non-Pb S71223-05-000 6/08 ...

Page 29

... SST39VF1602-90-4C-EKE SST39VF1602-90-4C-B3KE SST39VF1602-70-4I-EKE SST39VF1602-70-4I-B3KE SST39VF1602-90-4I-EKE SST39VF1602-90-4I-B3KE Valid Combinations for SST39VF3201 SST39VF3201-70-4C-EKE SST39VF3201-70-4C-B3KE SST39VF3201-90-4C-EKE SST39VF3201-90-4C-B3KE SST39VF3201-70-4I-EKE SST39VF3201-70-4I-B3KE SST39VF3201-90-4I-EKE SST39VF3201-90-4I-B3KE Valid Combinations for SST39VF3202 SST39VF3202-70-4C-EKE SST39VF3202-70-4C-B3KE SST39VF3202-90-4C-EKE SST39VF3202-90-4C-B3KE SST39VF3202-70-4I-EKE SST39VF3202-70-4I-B3KE SST39VF3202-90-4I-EKE SST39VF3202-90-4I-B3KE Note: Valid combinations are those products in mass production or will be in mass production. Consult your SST sales representative to confirm availability of valid combinations and to determine availability of new combinations. © ...

Page 30

... Maximum allowable mold flash is 0. the package ends, and 0.25 mm between leads. FIGURE 25: 48-lead Thin Small Outline Package (TSOP) 12mm x 20mm SST Package Code: EK ©2008 Silicon Storage Technology, Inc. 16 Mbit / 32 Mbit Multi-Purpose Flash Plus 18.50 18.30 20.20 19.80 30 SST39VF1601 / SST39VF3201 SST39VF1602 / SST39VF3202 1.05 0.95 0.50 BSC 0.27 0.17 12.20 11.80 ...

Page 31

... Mbit / 32 Mbit Multi-Purpose Flash Plus SST39VF1601 / SST39VF3201 SST39VF1602 / SST39VF3202 TOP VIEW 8.00 ± 0. CORNER SIDE VIEW SEATING PLANE Note: 1. Complies with JEDEC Publication 95, MO-210, variant 'AB-1', although some dimensions may be more stringent. 2. All linear dimensions are in millimeters. 3. Coplanarity: 0. Ball opening size is 0.38 mm (± 0.05 mm) ...

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