SST39VF6402B-70-4I-B1KE-T Microchip Technology, SST39VF6402B-70-4I-B1KE-T Datasheet

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SST39VF6402B-70-4I-B1KE-T

Manufacturer Part Number
SST39VF6402B-70-4I-B1KE-T
Description
2.7V To 3.6V 64Mbit Multi-Purpose Flash 48 TFBGA 8x10x1.2 Mm T/R
Manufacturer
Microchip Technology
Datasheet

Specifications of SST39VF6402B-70-4I-B1KE-T

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
64M (4M x 16)
Speed
70ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SST39VF6402B-70-4I-B1KE-T
Manufacturer:
Microchip Technology
Quantity:
10 000
FEATURES:
• Organized as 4M x16
• Single Voltage Read and Write Operations
• Superior Reliability
• Low Power Consumption (typical values at 5 MHz)
• Hardware Block-Protection/WP# Input Pin
• Sector-Erase Capability
• Block-Erase Capability
• Chip-Erase Capability
• Erase-Suspend/Erase-Resume Capabilities
• Hardware Reset Pin (RST#)
• Security-ID Feature
PRODUCT DESCRIPTION
The SST39VF640xB devices are 4M x16 CMOS Multi-
Purpose Flash Plus (MPF+) manufactured with SST’s pro-
prietary, high-performance CMOS SuperFlash technology.
The split-gate cell design and thick-oxide tunneling injector
attain better reliability and manufacturability compared with
alternate approaches. The SST39VF640xB write (Pro-
gram or Erase) with a 2.7-3.6V power supply. These
devices conform to JEDEC standard pin assignments for
x16 memories.
Featuring
SST39VF640xB devices provide a typical Word-Program
time of 7 µsec. These devices use Toggle Bit or Data# Poll-
ing to indicate the completion of Program operation. To pro-
tect against inadvertent write, they have on-chip hardware
and Software Data Protection schemes. Designed, manu-
factured, and tested for a wide spectrum of applications,
these devices are offered with a guaranteed typical endur-
ance of 100,000 cycles. Data retention is rated at greater
than 100 years.
The SST39VF640xB devices are suited for applications that
require convenient and economical updating of program,
©2006 Silicon Storage Technology, Inc.
S71288-02-000
1
– 2.7-3.6V
– Endurance: 100,000 Cycles (Typical)
– Greater than 100 years Data Retention
– Active Current: 9 mA (typical)
– Standby Current: 3 µA (typical)
– Auto Low Power Mode: 3 µA (typical)
– Top Block-Protection (top 32 KWord)
– Bottom Block-Protection (bottom 32 KWord)
– Uniform 2 KWord sectors
– Uniform 32 KWord blocks
– SST: 128 bits; User: 128 bits
for SST39VF6402B
for SST39VF6401B
high
64 Mbit (x16) Multi-Purpose Flash Plus
performance
7/06
SST39VF640xB2.7V 64Mb (x16) MPF+ memories
SST39VF6401B / SST39VF6402B
Word-Program,
the
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
• Fast Read Access Time:
• Latched Address and Data
• Fast Erase and Word-Program:
• Automatic Write Timing
• End-of-Write Detection
• CMOS I/O Compatibility
• JEDEC Standard
• Packages Available
• All non-Pb (lead-free) devices are RoHS compliant
configuration, or data memory. For all system applications,
they significantly improve performance and reliability, while
lowering power consumption. They inherently use less
energy during Erase and Program than alternative flash
technologies. The total energy consumed is a function of
the applied voltage, current, and time of application. Since
for any given voltage range, the SuperFlash technology
uses less current to program and has a shorter erase time,
the total energy consumed during any Erase or Program
operation is less than alternative flash technologies. These
devices also improve flexibility while lowering the cost for
program, data, and configuration storage applications.
The SuperFlash technology provides fixed Erase and Pro-
gram times, independent of the number of Erase/Program
cycles that have occurred. Therefore the system software
or hardware does not have to be modified or de-rated as is
necessary with alternative flash technologies, whose Erase
and Program times increase with accumulated Erase/Pro-
gram cycles.
To meet high-density, surface mount requirements, the
SST39VF640xB devices are offered in 48-lead TSOP and
48-ball TFBGA packages. See Figures 1 and 2 for pin
assignments.
– 70 ns
– 90 ns
– Sector-Erase Time: 18 ms (typical)
– Block-Erase Time: 18 ms (typical)
– Chip-Erase Time: 40 ms (typical)
– Word-Program Time: 7 µs (typical)
– Internal V
– Toggle Bits
– Data# Polling
– Flash EEPROM Pin Assignments
– Software command sequence compatibility
– 48-lead TSOP (12mm x 20mm)
– 48-ball TFBGA (8mm x 10mm)
- Address format is 11 bits, A
- Block-Erase 6th Bus Write Cycle is 30H
- Sector-Erase 6th Bus Write Cycle is 50H
PP
Generation
These specifications are subject to change without notice.
MPF is a trademark of Silicon Storage Technology, Inc.
10
-A
0
Data Sheet

Related parts for SST39VF6402B-70-4I-B1KE-T

SST39VF6402B-70-4I-B1KE-T Summary of contents

Page 1

... Mbit (x16) Multi-Purpose Flash Plus SST39VF6401B / SST39VF6402B SST39VF640xB2.7V 64Mb (x16) MPF+ memories FEATURES: • Organized as 4M x16 • Single Voltage Read and Write Operations – 2.7-3.6V • Superior Reliability – Endurance: 100,000 Cycles (Typical) – Greater than 100 years Data Retention • ...

Page 2

... Data# Polling and Toggle Bit. During the internal Pro- gram operation, the host is free to perform additional tasks. ©2006 Silicon Storage Technology, Inc. 64 Mbit Multi-Purpose Flash Plus SST39VF6401B / SST39VF6402B Any commands issued during the internal Program opera- tion are ignored. During the command sequence, WP# should be statically held high or low. ...

Page 3

... Mbit Multi-Purpose Flash Plus SST39VF6401B / SST39VF6402B Chip-Erase Operation The SST39VF640xB provide a Chip-Erase operation, which allows the user to erase the entire memory array to the “1” state. This is useful when the entire device must be quickly erased. The Chip-Erase operation is initiated by executing a six- byte command sequence with Chip-Erase command (10H) at address 555H in the last byte sequence ...

Page 4

... Write operation. This prevents inadvert- ent writes during power-up or power-down. Hardware Block Protection The SST39VF6402B support top hardware block protec- tion, which protects the top 32 KWord block of the device. The SST39VF6401B support bottom hardware block pro- tection, which protects the bottom 32 KWord block of the device ...

Page 5

... SST39VF6401B / SST39VF6402B Product Identification The Product Identification mode identifies the devices as the SST39VF6401B and SST39VF6402B, and the manu- facturer as SST. This mode may be accessed through software operations. Users may use the Software Product Identification operation to identify the part (i.e., using the device ID) when using multiple manufacturers in the same socket ...

Page 6

... A15 A14 A13 A12 A11 A10 A9 A8 A19 A20 WE# RST# A21 WP# NC A18 A17 FIGURE SSIGNMENTS FOR ©2006 Silicon Storage Technology, Inc. 64 Mbit Multi-Purpose Flash Plus SST39VF6401B / SST39VF6402B X-Decoder Control Logic Standard Pinout 9 10 Top View 11 12 Die 1288 48-tsop P1.0 ...

Page 7

... Mbit Multi-Purpose Flash Plus SST39VF6401B / SST39VF6402B FIGURE 2: PIN ASSIGNMENTS FOR TABLE ESCRIPTION Symbol Pin Name Functions Address Inputs To provide memory addresses During Sector-Erase A During Block-Erase A DQ -DQ Data Input/output To output data during Read cycles and receive input data during Write cycles Data is internally latched during a Write cycle. ...

Page 8

... Data Sheet TABLE PERATION ODES ELECTION Mode CE# Read V Program V Erase V Standby V Write Inhibit Product Identification Software Mode can but no other value ©2006 Silicon Storage Technology, Inc. 64 Mbit Multi-Purpose Flash Plus SST39VF6401B / SST39VF6402B OE# WE OUT High High OUT High OUT Address A IN ...

Page 9

... Valid Word-Addresses for Sec ID are from 000000H-000007H and 000010H-000017H. 7. The device does not remain in Software Product ID Mode if powered down. 8. With A -A =0; SST Manufacturer ID = 00BFH, is read with SST39VF6401B Device ID = 236DH, is read with A SST39VF6402B Device ID = 236CH, is read with Most significant address for SST39VF640xB ...

Page 10

... Block Information ( Number of blocks 256B = block size) 32H 0000H y =127 + 1 = 128 blocks (007FH = 127) 33H 0000H 34H 0001H z = 256 x 256 Bytes = 64 KBytes/block (0100H = 256) ©2006 Silicon Storage Technology, Inc. 64 Mbit Multi-Purpose Flash Plus SST39VF6401B / SST39VF6402B 1 S SST39VF640 B TRING FOR X SST39VF640 B X -DQ ...

Page 11

... Mbit Multi-Purpose Flash Plus SST39VF6401B / SST39VF6402B Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.) Temperature Under Bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55° ...

Page 12

... This parameter is measured only for initial qualification and after a design or process change that could affect this parameter endurance rating is qualified as a 10,000 cycle minimum for the whole device. A sector- or block-level rating would result in a END higher minimum specification. ©2006 Silicon Storage Technology, Inc. 64 Mbit Multi-Purpose Flash Plus SST39VF6401B / SST39VF6402B 2.7-3.6V DD Limits Min ...

Page 13

... Mbit Multi-Purpose Flash Plus SST39VF6401B / SST39VF6402B AC CHARACTERISTICS TABLE 14 EAD YCLE IMING Symbol Parameter T Read Cycle Time RC T Chip Enable Access Time CE T Address Access Time AA T Output Enable Access Time CE# Low to Active Output CLZ 1 T OE# Low to Active Output OLZ 1 T CE# High to High-Z Output ...

Page 14

... DATA SW1 SW2 WORD (ADDR/DATA) for SST39VF640xB µs prior to and 1 µs after the command sequence but no other value ROGRAM YCLE IMING IAGRAM 14 SST39VF6401B / SST39VF6402B OHZ T CHZ T OH DATA VALID INTERNAL PROGRAM OPERATION STARTS 1288 F04.0 S71288-02-000 HIGH-Z 1288 F03.0 7/06 ...

Page 15

... Mbit Multi-Purpose Flash Plus SST39VF6401B / SST39VF6402B 555 ADDRESS CPH OE# WE# DQ 15-0 XXAA SW0 Note Most significant address for SST39VF640xB MS 21 WP# must be held in proper logic state (V X can but no other value. IL IH, FIGURE 5: CE# C ONTROLLED ADDRESS A MS-0 CE# OE# WE DATA Note Most significant address ...

Page 16

... SST39VF640xB MS 21 WP# must be held in proper logic state (V X can but no other value. IL IH, FIGURE 8: WE# C ONTROLLED ©2006 Silicon Storage Technology, Inc. 64 Mbit Multi-Purpose Flash Plus SST39VF6401B / SST39VF6402B OEH for SST39VF640xB D IAGRAM SIX-BYTE CODE FOR CHIP-ERASE 2AA 555 555 2AA XX55 ...

Page 17

... Mbit Multi-Purpose Flash Plus SST39VF6401B / SST39VF6402B 555 ADDRESS A MS-0 CE# OE WE# DQ 15-0 XXAA SW0 Note: This device also supports CE# controlled Block-Erase operation The WE# and CE# signals are interchangeable as long as minimum timings are met. (See Table 15 Block Address Most significant address for SST39VF640xB ...

Page 18

... Data Sheet Three-Byte Sequence for Software ID Entry ADDRESS A 14-0 555 CE# OE WE# DQ 15-0 XXAA SW0 Note: Device ID = 236DH for SST39VF6401B and 236CH for SST39VF6402B WP# must be held in proper logic state (V X can IH, FIGURE 11 OFTWARE NTRY AND Three-Byte Sequence for CFI Query Entry ...

Page 19

... Mbit Multi-Purpose Flash Plus SST39VF6401B / SST39VF6402B THREE-BYTE SEQUENCE FOR SOFTWARE ID EXIT AND RESET 555 ADDRESS A 14-0 DQ 15-0 XXAA CE# OE WE# SW0 Note: WP# must be held in proper logic state (V X can but no other value. IL IH, FIGURE 13 OFTWARE XIT THREE-BYTE SEQUENCE FOR ADDRESS A MS-0 555 ...

Page 20

... T RP RST# CE#/OE# FIGURE 15: RST IMING IAGRAM T RP RST# CE#/OE# FIGURE 16: RST IMING IAGRAM ©2006 Silicon Storage Technology, Inc. 64 Mbit Multi-Purpose Flash Plus SST39VF6401B / SST39VF6402B T RHR (W HEN NO INTERNAL OPERATION IS IN PROGRESS T RY End-of-Write Detection (Toggle-Bit URING ROGRAM OR RASE OPERATION 20 1288 F15.0 ) 1288 F16 ...

Page 21

... Mbit Multi-Purpose Flash Plus SST39VF6401B / SST39VF6402B V IHT INPUT V ILT AC test inputs are driven at V (0.9 V IHT for inputs and outputs are V (0 FIGURE 17 NPUT UTPUT TO DUT FIGURE 18 EST OAD XAMPLE ©2006 Silicon Storage Technology, Inc REFERENCE POINTS ) for a logic “1” and V (0 ...

Page 22

... Data Sheet FIGURE 19 ORD ROGRAM ©2006 Silicon Storage Technology, Inc. 64 Mbit Multi-Purpose Flash Plus SST39VF6401B / SST39VF6402B Start Load data: XXAAH Address: 555H Load data: XX55H Address: 2AAH Load data: XXA0H Address: 555H Load Word Address/Word Data Wait for end of Program ( Data# Polling ...

Page 23

... Mbit Multi-Purpose Flash Plus SST39VF6401B / SST39VF6402B Internal Timer Program/Erase Initiated Wait SCE Program/Erase Completed FIGURE 20 AIT PTIONS ©2006 Silicon Storage Technology, Inc. Toggle Bit Program/Erase Initiated Read word Read same No word No Does DQ 6 match? Yes Program/Erase Completed 23 Data Sheet Data# Polling ...

Page 24

... Address: 555H Wait T IDA Read CFI data FIGURE 21: S ID/CFI E OFTWARE ©2006 Silicon Storage Technology, Inc. 64 Mbit Multi-Purpose Flash Plus SST39VF6401B / SST39VF6402B Sec ID Query Entry Software Product ID Entry Command Sequence Load data: XXAAH Address: 555H Load data: XX55H Address: 2AAH Load data: XX88H ...

Page 25

... Mbit Multi-Purpose Flash Plus SST39VF6401B / SST39VF6402B Load data: XXAAH Load data: XX55H Load data: XXF0H Return to normal FIGURE 22: S ID/CFI E OFTWARE ©2006 Silicon Storage Technology, Inc. Software ID Exit/CFI Exit/Sec ID Exit Command Sequence Load data: XXF0H Address: 555H Address: XXH Wait T IDA ...

Page 26

... Wait T SCE Chip erased to FFFFH FIGURE 23 RASE OMMAND ©2006 Silicon Storage Technology, Inc. 64 Mbit Multi-Purpose Flash Plus SST39VF6401B / SST39VF6402B Sector-Erase Command Sequence Load data: XXAAH Address: 555H Load data: XX55H Address: 2AAH Load data: XX80H Address: 555H Load data: XXAAH Address: 555H ...

Page 27

... Mbit Multi-Purpose Flash Plus SST39VF6401B / SST39VF6402B PRODUCT ORDERING INFORMATION SST 39 VF 6402B - XX XX XXXXB - XXX ©2006 Silicon Storage Technology, Inc XXX X Environmental Attribute Package Modifier Package Type Temperature Range Minimum Endurance Read Access Speed Hardware Block Protection Device Density Voltage Product Series 1. Environmental suffix “ ...

Page 28

... Valid Combinations for SST39VF6401B SST39VF6401B-70-4C-EK SST39VF6401B-70-4C-B1K SST39VF6401B-70-4C-EKE SST39VF6401B-70-4C-B1KE SST39VF6401B-90-4C-EK SST39VF6401B-90-4C-B1K SST39VF6401B-90-4C-EKE SST39VF6401B-90-4C-B1KE SST39VF6401B-70-4I-EK SST39VF6401B-70-4I-B1K SST39VF6401B-70-4I-EKE SST39VF6401B-70-4I-B1KE SST39VF6401B-90-4I-EK SST39VF6401B-90-4I-B1K SST39VF6401B-90-4I-EKE SST39VF6401B-90-4I-B1KE Valid Combinations for SST39VF6402B SST39VF6402B-70-4C-EK SST39VF6402B-70-4C-B1K SST39VF6402B-70-4C-EKE SST39VF6402B-70-4C-B1KE SST39VF6402B-90-4C-EK SST39VF6402B-90-4C-B1K SST39VF6402B-90-4C-EKE SST39VF6402B-90-4C-B1KE SST39VF6402B-70-4I-EK SST39VF6402B-70-4I-B1K SST39VF6402B-70-4I-EKE SST39VF6402B-70-4I-B1KE SST39VF6402B-90-4I-EK SST39VF6402B-90-4I-B1K SST39VF6402B-90-4I-EKE SST39VF6402B-90-4I-B1KE Note: Valid combinations are those products in mass production or will be in mass production. Consult your SST sales representative to confirm availability of valid combinations and to determine availability of new combinations. © ...

Page 29

... Mbit Multi-Purpose Flash Plus SST39VF6401B / SST39VF6402B PACKAGING DIAGRAMS Pin # 1 Identifier 0.70 0.50 Note: 1. Complies with JEDEC publication 95 MO-142 DD dimensions, although some dimensions may be more stringent. 2. All linear dimensions are in millimeters (max/min). 3. Coplanarity: 0 Maximum allowable mold flash is 0. the package ends, and 0.25 mm between leads. ...

Page 30

... Changed document phase from Preliminary Information to Data Sheet Silicon Storage Technology, Inc. • 1171 Sonora Court • Sunnyvale, CA 94086 • Telephone 408-735-9110 • Fax 408-735-9036 ©2006 Silicon Storage Technology, Inc. 64 Mbit Multi-Purpose Flash Plus SST39VF6401B / SST39VF6402B 4.00 8.00 ± 0.20 0.80 1.10 ± ...

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