SST39WF1602-70-4C-MAQE-T Microchip Technology, SST39WF1602-70-4C-MAQE-T Datasheet

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SST39WF1602-70-4C-MAQE-T

Manufacturer Part Number
SST39WF1602-70-4C-MAQE-T
Description
1.65V To 1.95V 16Mbit Multi-Purpose Flash 48 WFBGA 4x6x0.8 Mm T/R
Manufacturer
Microchip Technology
Datasheet

Specifications of SST39WF1602-70-4C-MAQE-T

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
16M (1M x 16)
Speed
70ns
Interface
Parallel
Voltage - Supply
1.65 V ~ 1.95 V
Operating Temperature
0°C ~ 70°C
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SST39WF1602-70-4C-MAQE-T
Manufacturer:
Microchip Technology
Quantity:
10 000
FEATURES:
• Organized as 1M x16
• Single Voltage Read and Write Operations
• Superior Reliability
• Low Power Consumption (typical values at 5 MHz)
• Hardware Block-Protection/WP# Input Pin
• Sector-Erase Capability
• Block-Erase Capability
• Chip-Erase Capability
• Erase-Suspend/Erase-Resume Capabilities
• Hardware Reset Pin (RST#)
PRODUCT DESCRIPTION
The SST39WF1601/1602 devices are 1M x16 CMOS
Multi-Purpose Flash Plus (MPF+) manufactured with
SST’s proprietary, high-performance CMOS SuperFlash
technology. The split-gate cell design and thick-oxide tun-
neling injector attain better reliability and manufacturability
compared with alternate approaches. The SST39WF1601/
1602 write (Program or Erase) with a 1.65-1.95V power
supply. These devices conform to JEDEC standard pin
assignments for x16 memories.
Featuring
SST39WF1601/1602 devices provide a typical Word-Pro-
gram time of 28 µsec. These devices use Toggle Bit or
Data# Polling to indicate the completion of Program opera-
tion. To protect against inadvertent write, they have on-chip
hardware and Software Data Protection schemes.
Designed, manufactured, and tested for a wide spectrum of
applications, these devices are offered with a guaranteed
typical endurance of 100,000 cycles. Data retention is rated
at greater than 100 years.
The SST39WF1601/1602 devices are suited for applica-
tions that require convenient and economical updating of
©2011 Silicon Storage Technology, Inc.
S71297-06-000
1
– 1.65-1.95V
– Endurance: 100,000 Cycles (Typical)
– Greater than 100 years Data Retention
– Active Current: 5 mA (typical)
– Standby Current: 5 µA (typical)
– Auto Low Power Mode: 5 µA (typical)
– Top Block-Protection (top 32 KWord)
– Bottom Block-Protection (bottom 32 KWord)
– Uniform 2 KWord sectors
– Uniform 32 KWord blocks
for SST39WF1602
for SST39WF1601
high
16 Mbit (x16) Multi-Purpose Flash Plus
performance
01/11
SST39WF160x2.7V 16Mb (x16) MPF+ memories
SST39WF1601 / SST39WF1602
Word-Program,
the
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
• Security-ID Feature
• Fast Read Access Time:
• Latched Address and Data
• Fast Erase and Word-Program:
• Automatic Write Timing
• End-of-Write Detection
• CMOS I/O Compatibility
• JEDEC Standard
• Packages Available
• All devices are RoHS compliant
program, configuration, or data memory. For all system
applications, they significantly improve performance and
reliability, while lowering power consumption. They inher-
ently use less energy during Erase and Program than
alternative flash technologies. The total energy consumed
is a function of the applied voltage, current, and time of
application. Since for any given voltage range, the Super-
Flash technology uses less current to program and has a
shorter erase time, the total energy consumed during any
Erase or Program operation is less than alternative flash
technologies. These devices also improve flexibility while
lowering the cost for program, data, and configuration stor-
age applications.
The SuperFlash technology provides fixed Erase and Pro-
gram times, independent of the number of Erase/Program
cycles that have occurred. Therefore the system software
or hardware does not have to be modified or de-rated as is
necessary with alternative flash technologies, whose
Erase and Program times increase with accumulated
Erase/Program cycles.
– SST: 128 bits; User: 128 bits
– 70 ns
– Sector-Erase Time: 36 ms (typical)
– Block-Erase Time: 36 ms (typical)
– Chip-Erase Time: 140 ms (typical)
– Word-Program Time: 28 µs (typical)
– Internal V
– Toggle Bits
– Data# Polling
– Flash EEPROM Pin Assignments and
– 48-ball TFBGA (6mm x 8mm)
– 48-ball WFBGA (4mm x 6mm)
Command Sets
PP
Generation
These specifications are subject to change without notice.
MPF is a trademark of Silicon Storage Technology, Inc.
Data Sheet

Related parts for SST39WF1602-70-4C-MAQE-T

SST39WF1602-70-4C-MAQE-T Summary of contents

Page 1

... Mbit (x16) Multi-Purpose Flash Plus SST39WF1601 / SST39WF1602 SST39WF160x2.7V 16Mb (x16) MPF+ memories FEATURES: • Organized as 1M x16 • Single Voltage Read and Write Operations – 1.65-1.95V • Superior Reliability – Endurance: 100,000 Cycles (Typical) – Greater than 100 years Data Retention • ...

Page 2

... CE# or OE# is high. Refer to the Read cycle timing diagram for further details (Figure 4). ©2011 Silicon Storage Technology, Inc. 16 Mbit Multi-Purpose Flash Plus SST39WF1601 / SST39WF1602 Word-Program Operation The SST39WF1601/1602 are programmed on a word-by- word basis. Before programming, the sector where the word exists must be fully erased ...

Page 3

... Mbit Multi-Purpose Flash Plus SST39WF1601 / SST39WF1602 Erase-Suspend/Erase-Resume Commands The Erase-Suspend operation temporarily suspends a Sector- or Block-Erase operation thus allowing data to be read from any memory location, or program data into any sector/block that is not suspended for an Erase operation. The operation is executed by issuing one byte command sequence with Erase-Suspend command (B0H) ...

Page 4

... Silicon Storage Technology, Inc. 16 Mbit Multi-Purpose Flash Plus Hardware Block Protection The SST39WF1602 support top hardware block protec- tion, which protects the top 32 KWord block of the device. The SST39WF1601 support bottom hardware block pro- bit will ...

Page 5

... CFI Query mode. Product Identification The Product Identification mode identifies the devices as the SST39WF1601, SST39WF1602 and manufacturer as SST. This mode may be accessed software operations. Users may use the Software Product Identification opera- tion to identify the part (i.e., using the device ID) when using multiple manufacturers in the same socket ...

Page 6

... A10 A11 DQ7 DQ14 DQ13 RST# NC A19 DQ5 DQ12 V DD WP# A18 NC DQ2 DQ10 DQ11 A17 A6 A5 DQ0 DQ8 DQ9 CE# OE 1297 48-tfbga B3K P1.1 6 SST39WF1601 / SST39WF1602 SuperFlash Memory Y-Decoder I/O Buffers and Data Latches 1297 B1 DQ6 DQ4 DQ3 DQ1 S71297-06-000 01/11 ...

Page 7

... Mbit Multi-Purpose Flash Plus SST39WF1601 / SST39WF1602 CE FIGURE 3: Pin assignments for 48-ball WFBGA ©2011 Silicon Storage Technology, Inc. TOP VIEW (balls facing down) SST39WF160x A4 A6 A17 NC NC WE# RST WP# NC A10 A5 A18 A8 DQ8 DQ10 DQ4 OE# DQ9 A19 NC DQ5 DQ0 DQ1 DQ2 DQ3 V DQ12 ...

Page 8

... Silicon Storage Technology, Inc. 16 Mbit Multi-Purpose Flash Plus -A address lines will select the sector address lines will select the block OE# WE OUT High High OUT High OUT SST39WF1601 / SST39WF1602 Address Sector or block address, XXH for Chip-Erase See Table 6 S71297-06-000 T4.0 1297 T5.0 1297 01/11 ...

Page 9

... Valid Word-Addresses for Sec ID are from 000000H-000007H and 000008H to 00000FH. 7. The device does not remain in Software Product ID Mode if powered down. 8. With A -A =0; SST Manufacturer ID = 00BFH, is read with SST39WF1601 Device ID = BF274BH, is read with A SST39WF1602 Device ID = BF274AH, is read with Most significant address for SST39WF1601/1602 ...

Page 10

... Block Information ( Number of blocks 256B = block size) 32H 0000H blocks (001F = 31) 33H 0000H 34H 0001H z = 256 x 256 Bytes = 64 KByte/block (0100H = 256) ©2011 Silicon Storage Technology, Inc. 16 Mbit Multi-Purpose Flash Plus SST39WF1601 / SST39WF1602 1 -DQ : 100 millivolts 3 0 -DQ : 100 millivolts 3 0 pin) PP ...

Page 11

... Mbit Multi-Purpose Flash Plus SST39WF1601 / SST39WF1602 Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.) Temperature Under Bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55° ...

Page 12

... This parameter is measured only for initial qualification and after a design or process change that could affect this parameter endurance rating is qualified as a 10,000 cycle minimum for the whole device. A sector- or block-level rating would result in a END higher minimum specification. ©2011 Silicon Storage Technology, Inc. 16 Mbit Multi-Purpose Flash Plus SST39WF1601 / SST39WF1602 1 = 1.65-1.95V DD Limits Min Max ...

Page 13

... Mbit Multi-Purpose Flash Plus SST39WF1601 / SST39WF1602 AC CHARACTERISTICS TABLE 14: Read Cycle Timing Parameters V Symbol Parameter T Read Cycle Time RC T Chip Enable Access Time CE T Address Access Time AA T Output Enable Access Time CE# Low to Active Output CLZ 1 T OE# Low to Active Output OLZ 1 T CE# High to High-Z Output ...

Page 14

... DATA VALID INTERNAL PROGRAM OPERATION STARTS 2AAA 5555 ADDR XX55 XXA0 DATA SW1 SW2 WORD (ADDR/DATA µs prior to and 1µs after the command sequence but no other value. 14 SST39WF1601 / SST39WF1602 OHZ T T CHZ OH HIGH-Z DATA VALID 1297 F03 1297 F04.1 S71297-06-000 01/11 ...

Page 15

... Mbit Multi-Purpose Flash Plus SST39WF1601 / SST39WF1602 ADDRESS A 19-0 5555 CE OE# WE# DQ 15-0 XXAA SW0 Note: WP# must be held in proper logic state (V X can but no other value. IL IH, FIGURE 6: CE# Controlled Program Cycle Timing Diagram ADDRESS A 19-0 CE# OE# WE# DATA DQ 7 FIGURE 7: Data# Polling Timing Diagram © ...

Page 16

... SIX-BYTE CODE FOR CHIP-ERASE 5555 5555 2AAA XX55 XX80 XXAA XX55 SW1 SW2 SW3 SW4 ) 1 µs prior to and 1µs after the command sequence SST39WF1601 / SST39WF1602 T OES TWO READ CYCLES 1297 F07.1 WITH SAME OUTPUTS T SCE 5555 XX10 SW5 1297 F08.1 S71297-06-000 01/11 ...

Page 17

... Mbit Multi-Purpose Flash Plus SST39WF1601 / SST39WF1602 ADDRESS A 5555 19-0 CE# OE WE# DQ XXAA 15-0 SW0 Note: This device also supports CE# controlled Block-Erase operation. The WE# and CE# signals are interchangeable as long as minimum timings are met. (See Table 15 Block Address X WP# must be held in proper logic state (V ...

Page 18

... XXAA 15-0 SW0 Note: WP# must be held in proper logic state (V X can but no other value. IL IH, FIGURE 13: CFI Query Entry and Read ©2011 Silicon Storage Technology, Inc. 16 Mbit Multi-Purpose Flash Plus SST39WF1601 / SST39WF1602 5555 0000 T IDA T WPH T AA XX55 XX90 00BF SW1 ...

Page 19

... Mbit Multi-Purpose Flash Plus SST39WF1601 / SST39WF1602 THREE-BYTE SEQUENCE FOR SOFTWARE ID EXIT AND RESET ADDRESS A 5555 2AAA 14-0 DQ XXAA 15-0 CE# OE WE# SW0 Note: WP# must be held in proper logic state (V X can but no other value. IL IH, FIGURE 14: Software ID Exit/CFI Exit THREE-BYTE SEQUENCE FOR CFI QUERY ENTRY ...

Page 20

... RST# CE#/OE# FIGURE 16: RST# Timing Diagram (When no internal operation is in progress RST# CE#/OE# FIGURE 17: RST# Timing Diagram (During Program or Erase operation) ©2011 Silicon Storage Technology, Inc. 16 Mbit Multi-Purpose Flash Plus SST39WF1601 / SST39WF1602 T RHR T RY End-of-Write Detection (Toggle-Bit) 20 1297 F22.0 1297 F23.1 ...

Page 21

... Mbit Multi-Purpose Flash Plus SST39WF1601 / SST39WF1602 V IHT INPUT V ILT AC test inputs are driven at V (0.9 V IHT for inputs and outputs are V (0 FIGURE 18: AC Input/Output Reference Waveforms TO DUT 1297 F15.1 FIGURE 19: A Test Load Example ©2011 Silicon Storage Technology, Inc. V REFERENCE POINTS IT ) for a logic “ ...

Page 22

... Data Sheet FIGURE 20: Word-Program Algorithm ©2011 Silicon Storage Technology, Inc. 16 Mbit Multi-Purpose Flash Plus SST39WF1601 / SST39WF1602 Start Load data: XXAAH Address: 5555H Load data: XX55H Address: 2AAAH Load data: XXA0H Address: 5555H Load Word Address/Word Data Wait for end of Program ( Data# Polling ...

Page 23

... Mbit Multi-Purpose Flash Plus SST39WF1601 / SST39WF1602 Internal Timer Program/Erase Initiated Wait SCE Program/Erase Completed FIGURE 21: Wait Options ©2011 Silicon Storage Technology, Inc. Toggle Bit Program/Erase Initiated Read word Read same No word No Does DQ 6 match Yes Program/Erase Completed 23 Data Sheet Data# Polling ...

Page 24

... Load data: XX55H Address: 2AAAH Load data: XX88H Address: 5555H Wait T IDA Wait T IDA Read Sec ID X can but no other value 24 SST39WF1601 / SST39WF1602 Software Product ID Entry Command Sequence Load data: XXAAH Address: 5555H Load data: XX55H Address: 2AAAH Load data: XX90H Address: 5555H ...

Page 25

... Mbit Multi-Purpose Flash Plus SST39WF1601 / SST39WF1602 Load data: XXAAH Load data: XX55H Address: 2AAAH Load data: XXF0H Return to normal FIGURE 23: Software ID/CFI Exit Command Flowcharts ©2011 Silicon Storage Technology, Inc. Software ID Exit/CFI Exit/Sec ID Exit Command Sequence Load data: XXF0H Address: 5555H ...

Page 26

... Load data: XX10H Address: 5555H Wait T SCE Chip erased to FFFFH FIGURE 24: Erase Command Sequence ©2011 Silicon Storage Technology, Inc. 16 Mbit Multi-Purpose Flash Plus SST39WF1601 / SST39WF1602 Sector-Erase Command Sequence Command Sequence Load data: XXAAH Address: 5555H Load data: XX55H Address: 2AAAH Load data: XX80H ...

Page 27

... XXX Valid Combinations for SST39WF1601 SST39WF1601-70-4C-B3KE SST39WF1601-70-4C-MAQE SST39WF1601-70-4I-B3KE SST39WF1601-70-4I-MAQE Valid Combinations for SST39WF1602 SST39WF1602-70-4C-B3KE SST39WF1602-70-4C-MAQE SST39WF1602-70-4I-B3KE SST39WF1602-70-4I-MAQE Note: Valid combinations are those products in mass production or will be in mass production. Consult your SST sales representative to confirm availability of valid combinations and to determine availability of new combinations. ...

Page 28

... All linear dimensions are in millimeters. 3. Coplanarity: 0. Ball opening size is 0. 0.05 mm) FIGURE 26: 48-ball Very-Very-Thin-Profile, Fine-pitch Ball Grid Array (WFBGA) 4mm x 6mm SST Package Code MAQ ©2011 Silicon Storage Technology, Inc. 16 Mbit Multi-Purpose Flash Plus SST39WF1601 / SST39WF1602 BOTTOM VIEW 4.00 6.00 0.20 0. 1.10 0.10 ...

Page 29

... Changed 000010H to 000017H to 000008H to 00000FH three places in footnotes of Table 6 on page 9. 05 • EOL of SST39WF1601-70-4C-Y1QE, SST39WF1601-70-4I-Y1QE, SST39WF1602-70-4C-Y1QE, and SST39WF1602-70-4I-Y1QE. Replacement parts SST39WF1601-70-4C-MAQE, SST39WF1601-70-4I-MAQE, SST39WF1602-70-4C-MAQE, and SST39WF1602-70-4I-MAQE in this document. • Added MAQE package drawing and information. • Removed all 90ns speed products 06 • ...

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