TC1017-3.0VCTTR Microchip Technology, TC1017-3.0VCTTR Datasheet - Page 13

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TC1017-3.0VCTTR

Manufacturer Part Number
TC1017-3.0VCTTR
Description
IC,VOLT REGULATOR,FIXED,+3V,CMOS,TSOP,5PIN,PLASTIC
Manufacturer
Microchip Technology
Datasheet

Specifications of TC1017-3.0VCTTR

Rohs Compliant
YES
Regulator Topology
Positive Fixed
Voltage - Output
3V
Voltage - Input
Up to 6V
Voltage - Dropout (typical)
0.285V @ 150mA
Number Of Regulators
1
Current - Output
150mA (Min)
Operating Temperature
-40°C ~ 125°C
Mounting Type
Surface Mount
Package / Case
SOT-23-5, SC-74A, SOT-25
Number Of Outputs
1
Polarity
Positive
Input Voltage Max
6 V
Output Voltage
3 V
Output Type
Fixed
Dropout Voltage (max)
0.2 V at 50 mA
Output Current
150 mA
Line Regulation
0.04 % / V
Load Regulation
0.38 %
Voltage Regulation Accuracy
0.5 %
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Current - Limit (min)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

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Quantity
Price
Part Number:
TC1017-3.0VCTTR
Manufacturer:
MICROCHIP
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9 000
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Manufacturer:
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FIGURE 5-2:
Ambient Temperature (SC-70 package).
5.3
The TC1017 is also available in a SOT-23 package for
improved thermal performance. The thermal resistance
for the SOT-23 package is approximately 255°C/W
when the copper area used in the printed circuit board
layout is similar to the JEDEC J51-7 low thermal
conductivity standard or semi-G42-88 standard. For
applications with a larger or thicker copper area, the
thermal resistance can be lowered. See AN792, “A
Method to Determine How Much Power a SOT-23 Can
Dissipate in an Application”, DS00792, for a method to
determine the thermal resistance for a particular
application.
The TC1017 power dissipation capability is dependant
upon several variables: input voltage, output voltage,
load current, ambient temperature and maximum
junction temperature. The absolute maximum steady-
state junction temperature is rated at +125°C. The
power dissipation within the device is equal to:
EQUATION 5-4:
The V
compared to the (V
power dissipation within the LDO to be:
EQUATION 5-5:
To
capability, the following equation is used:
© 2005 Microchip Technology Inc.
P
D
determine
=
160
140
120
100
IN
80
60
40
20
0
Power Dissipation: SOT-23
V
-40
x I
IN
P
GND
D
V
-15
=
OUT
the
term is typically very small when
IN
V
Ambient Temperature (°C)
–V
IN
10
Maximum Current vs.
maximum
I
OUT
LOAD
V
) x I
OUT
35
+
LOAD
V
IN
60
I
LOAD
term, simplifying the
power
V
I
IN
GND
85
- V
OUT
dissipation
110
= 1V
EQUATION 5-6:
Given the following example:
Find:
1.
2.
3.
In this example, the TC1017 dissipates approximately
158.5 mW and the junction temperature is raised
40.5°C over the ambient. The absolute maximum
power dissipation is 157 mW when given a maximum
ambient temperature of +85°C.
Input voltage, output voltage or load current limits can
also be determined by substituting known values in the
power dissipation equations.
Figure 5-3 and Figure 5-4 depict typical maximum
power dissipation versus ambient temperature, as well
as typical maximum current versus ambient tempera-
ture with a 1V input voltage to output voltage
differential, respectively.
Where:
Internal power dissipation:
Maximum allowable ambient temperature:
Maximum
desired ambient:
T
P
T
T
R
A_MAX
DMAX
A_MAX
J_MAX
I
JA
V
LOAD
OUT
P
V
T
DMAX
IN
=
=
=
=
=
=
A
=
P
= the thermal resistance from
= the maximum junction
= the maximum ambient
D
T
158.5mW
84.5 C
=
=
=
=
allowable
125 C 40.5 C
V
4.1V 2.85
125 C 158.5mW 255 C/W
J_MAX
=
=
temperature allowed
junction to air
=
temperature
IN_MAX
=
T
----------------------------- -
125 C 85 C
---------------------------------- -
157mW
3.0V to 4.1V
2.85V ±2.5%
120 mA (output current)
+85°C (max. desired ambient)
----------------------------------------------
J_MAX
T
255 C/W
R
J_MAX
P
DMAX
JA
V
R
OUT_MIN
power
T
A
0.975
JA
T
A_MAX
R
TC1017
DS21813D-page 13
JA
dissipation
I
120mA
LOAD
at

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