NAND512W3A2DZA6F NUMONYX, NAND512W3A2DZA6F Datasheet - Page 28

• Manufacturer Part Number: NAND512W3A2DZA6F
• Manufacturer: NUMONYX

Specifications of NAND512W3A2DZA6F

• Cell Type: NAND
• Density: 512Mb
• Access Time (max): 12us
• Interface Type: Parallel
• Address Bus: 26b
• Operating Supply Voltage (typ): 3/3.3V
• Operating Temp Range: -40C to 85C
• Package Type: VFBGA
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 64M
• Supply Current: 30mA
• Mounting: Surface Mount
• Pin Count: 63
• Lead Free Status / RoHS Status: Compliant

Device operations
6.8
28/53
Read electronic signature
The device contains a manufacturer code and device code. To read these codes two steps
are required:
1.
2.
Refer to
Table 12.
first use one bus write cycle to issue the Read Electronic Signature command (90h),
followed by an address input of 00h
then perform two bus read operations – the first reads the manufacturer code and the
second, the device code. Further bus read operations are ignored.
Table 12: Electronic
Root part number
NAND01GW3A2C
NAND01GW4A2C
NAND512W3A2D
NAND512W4A2D
NAND01GR3A2C
NAND01GR4A2C
NAND512R3A2D
NAND512R4A2D
Electronic signature
signature, for information on the addresses.
Manufacturer code
0020h
0020h
20h
20h
NAND512xxA2D, NAND01GxxA2C
Device code
0046h
0056h
0072h
0074h
79h
36h
76h
78h