NAND512W3A2DN6F NUMONYX, NAND512W3A2DN6F Datasheet - Page 7

• Manufacturer Part Number: NAND512W3A2DN6F
• Manufacturer: NUMONYX

Specifications of NAND512W3A2DN6F

• Cell Type: NAND
• Density: 512Mb
• Access Time (max): 12us
• Interface Type: Parallel
• Address Bus: 26b
• Operating Supply Voltage (typ): 3/3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 64M
• Supply Current: 30mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / RoHS Status: Compliant

NAND512xxA2D, NAND01GxxA2C
Table 2.
Figure 1.
NAND01GxxA2C
NAND512xxA2D
Reference
NAND01GW3A2C
NAND01GW4A2C
Product description
NAND512W3A2D
NAND512W4A2D
NAND01GR3A2C
NAND01GR4A2C
Logic diagram
NAND512R3A2D
NAND512R4A2D
Part number
Density
1 Gbit
Mbits
512
WP
width
CL
Bus
AL
x16
x16
x8
x8
W
R
E
512+16
512+16
256+8
256+8
words
words
Page
bytes
bytes
size
NAND flash
16K+512
16K+512
8K+256
8K+256
Block
words
words
bytes
bytes
size
V DD
V SS
4096 blocks
8192 blocks
32 pages x
32 pages x
Memory
array
8
1.7 to 1.95 V
1.7 to 1.95 V
1.7 to 1.95 V
1.7 to 1.95 V
RB
2.7 to 3.6 V
2.7 to 3.6 V
2.7 to 3.6 V
2.7 to 3.6 V
Operating
I/O8-I/O15, x16
I/O0-I/O7, x8/x16
voltage
AI07557C
Random
access
15 µs
12 µs
15 µs
12 µs
15 µs
12 µs
15 µs
12 µs
Max
Sequential
access
50 ns
30 ns
50 ns
30 ns
50 ns
30 ns
50 ns
30 ns
Min
Timings
program
200 µs
Page
Typ
Description
Block
erase
2 ms
Typ
VFBGA63
Package
TSOP48
TSOP48
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