NAND08GW3B2CN6E NUMONYX, NAND08GW3B2CN6E Datasheet - Page 66

• Manufacturer Part Number: NAND08GW3B2CN6E
• Description: 8GBIT SLC NAND FLASH TSOP
• Manufacturer: NUMONYX

Specifications of NAND08GW3B2CN6E

• Cell Type: NAND
• Density: 8Gb
• Access Time (max): 25us
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 30b
• Operating Supply Voltage (typ): 3/3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Program/erase Volt (typ): 2.7 to 3.6V
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 1G
• Supply Current: 30mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / RoHS Status: Compliant

DC and AC parameters
Figure 42. Resistor value versus waveform timings for ready/busy signal
1. T = 25 °C.
12.2
Figure 43. Data protection
66/72
Data protection
The Numonyx NAND devices are designed to guarantee data protection during power
transitions.
A V
In the V
low (V
figure.
V DD
W
DD
IL
detection circuit disables all NAND operations, if V
DD
) to guarantee hardware protection during power transitions as shown in the below
Nominal Range
range from V
V LKO
Locked
LKO
to the lower limit of nominal range, the WP pin should be kept
Locked
DD
NAND04G-B2D, NAND08G-BxC
is below the V
Ai11086
LKO
threshold.