SDIN2B2-8G-T SanDisk, SDIN2B2-8G-T Datasheet

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SDIN2B2-8G-T

Manufacturer Part Number
SDIN2B2-8G-T
Description
Manufacturer
SanDisk
Type
Flash Diskr
Datasheet

Specifications of SDIN2B2-8G-T

Density
8GByte
Operating Supply Voltage (typ)
3.3V
Operating Temperature (min)
-25C
Operating Temperature (max)
85C
Package Type
TFBGA
Mounting
Surface Mount
Pin Count
169
Operating Temperature Classification
Commercial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Lead Free Status / RoHS Status
Supplier Unconfirmed
(JEDEC Package)
Data Sheet
Rev. 1.2
80-36-00592
July 2007
SanDisk Corporation
Corporate Headquarters • 601 McCarthy Boulevard • Milpitas, CA 95035
Phone (408) 801-1000 • Fax (408) 801-8657
www.sandisk.com

Related parts for SDIN2B2-8G-T

SDIN2B2-8G-T Summary of contents

Page 1

... Package) Data Sheet Rev. 1.2 80-36-00592 July 2007 SanDisk Corporation Corporate Headquarters • 601 McCarthy Boulevard • Milpitas, CA 95035 Phone (408) 801-1000 • Fax (408) 801-8657 www.sandisk.com ...

Page 2

... Corporation general policy does not recommend the use of its products in life support applications where in a failure ® or malfunction of the product may directly threaten life or injury. Per SanDisk Terms and Conditions of Sale, the user of SanDisk products in life support applications assumes all risk of such use and indemnifies SanDisk against all damages. See “Disclaimer of Liability.” ...

Page 3

... Power Up ....................................................................................................................... 16 3.4.2. Bus Operating Conditions .............................................................................................. 16 3.4.3. Bus Timing (Default) ...................................................................................................... 16 3.4.4. Bus Timing (High-Speed Mode) .................................................................................... 16 3.5. iNAND Registers ........................................................................................................ 16 3.5.1. Operating Conditions Register ....................................................................................... 17 3.5.2. Card Identification Register ........................................................................................... 17 3.5.3. Card Specific Data Register .......................................................................................... 18 © 2007 SanDisk Corporation SanDisk iNAND Data Sheet 3 80-36-00592 ...

Page 4

... Timing Diagrams and Values ......................................................................................... 23 4.3.9. Speed Class Specification ............................................................................................. 23 4.3.10. Erase Timeout Calculation ............................................................................................. 23 5. Appendix - Power Delivery and Capacitor Specifications .............................................. 24 5.1. SanDisk iNAND Power Domains ................................................................................ 24 5.2. Capacitor Connection Guidelines ............................................................................... 24 5.2.1. CREG Connections ....................................................................................................... 24 6. Appendix - Ordering Information ..................................................................................... 26 6.1. iNAND (JEDEC Package) ........................................................................................... 26 7. Disclaimer of Liability ....................................................................................................... 27 7 ...

Page 5

... The SanDisk iNAND provides memory for use in mass storage applications. In addition to the mass- storage-specific flash memory chip, iNAND includes an intelligent controller, which manages interface protocols, data storage and retrieval, error correction code (ECC) algorithms, defect handling and diagnostics, power management, wear leveling, and clock control ...

Page 6

... Standard footprint across all capacities 1.3. Document Scope This document describes the key features and specifications of the SanDisk iNAND as well as the information required to interface host system. Chapter 2 describes the physical and mechanical properties of iNAND, Chapter 3 contains the pins and register overview, and Chapter 4 gives a general overview of the SD protocol. ...

Page 7

... Power management for low power operation 1.6. Technology Independence The 512-byte sector size of the SanDisk iNAND is the same as that in an IDE magnetic disk drive. To write or read a sector (or multiple sectors), the host software simply issues a read or write command to the card. The command contains the address and number of sectors to write or read ...

Page 8

... WP Group 0 Single Block Mode Memory Memory Sectors Sectors Start Address (Read) Memory Memory Sectors Sectors Start Address © 2007 SanDisk Corporation Figure 2 - Memory Array Partitioning SanDisk iNAND Block Block Sector Sector 2 Sector 3 Sector n WP Group 1 WP Group 2 Figure 3 - Data Transfer Formats ...

Page 9

... The SPI Mode is a secondary communication protocol for iNAND devices. This mode is a subset of the SD Protocol, designed to communicate with an SPI channel, commonly found in Motorola and other vendors’ microcontrollers. © 2007 SanDisk Corporation Table 1 - Mode Definitions Description 9 Introduction SanDisk iNAND Data Sheet 80-36-00592 ...

Page 10

... Non-Operating: After soldered onto PC Board 2.3.2. Moisture Sensitivity The moisture sensitivity level for iNAND is MSL = 3. © 2007 SanDisk Corporation Value Measurement Average 250 uA Max. 100 mA Max. 200 mA Max. 100 mA Max. 200 mA Max. -25° 85° C -40° 85° Product Specifications SanDisk iNAND Data Sheet 80-36-00592 ...

Page 11

... System Reliability and Maintenance Table 5 - Reliability and Maintenance Specifications MTBF Preventative Maintenance Data Reliability © 2007 SanDisk Corporation Table 4 - System Performance Timing Value 15 MB/s 9 MB/s 100 ms 250 ms 1000 ms >1,000,000 hours None 14 <1 non-recoverable error in 10 bits read 11 Product Specifications SanDisk iNAND Data Sheet 80-36-00592 ...

Page 12

... Rev. 1.2 2.6. Physical Specifications The SanDisk iNAND is a 169-pin, thin fine-pitched ball grid array (BGA). See Figure 4 and Figure 5 (169-pin) for physical specifications and dimensions. Figure 4 - iNAND Specifications Top and Side View (Detail A) Figure 5 - iNAND Specifications Bottom View and Ball Data (Detail B) © ...

Page 13

... Product Specifications SanDisk iNAND Data Sheet Nominal Maximum --- 0.047 0.009 0.011 0.033 0.035 0.008 0.010 0.472 0.475 0.630 0.633 0.709 0.711 0.059 --- 0.138 --- 0.217 --- 0.256 --- 0.256 --- ...

Page 14

... Rev. 1.2 3. NAND I I NTERFACE 3.1. iNAND Ball Array Figure 6 illustrates the SanDisk iNAND ball array DAT3 J K RSRVD CREG L RSRVD RSRVD M RSRVD RSRVD RSRVD RSRVD N RSRVD RSRVD P R RSRVD RSRVD T RSRVD RSRVD U RSRVD RSRVD V RSRVD RSRVD W RSRVD RSRVD NC Y VSS ...

Page 15

... Rev. 1.2 3.2. Pins and Signal Description Table 7 contains the SanDisk iNAND functional pin assignment. Pin No. Name Pin No K10 NC A11 NC K11 B2 K12 NC B13 NC K13 D1 NC K14 D14 DAT0 H4 DAT1 L12 H5 L13 DAT2 H6 NC L14 H7 RSRVD M1 H8 RSRVD M2 H9 RSRVD M3 H10 RSRVD ...

Page 16

... Balls marked as RSRVD are reserved for future use and recommended to be left floating for future compatibility. 3.3. Bus Topologies SanDisk iNAND products support two communication protocols: SD and SPI. For more details, refer to Section 3.5 of the SDA Physical Layer Specification, Version 2.00. Section 6 of the specification contains a bus circuitry diagram for reference. ...

Page 17

... Binary checksum (CRC) Not used,always --- ―1‖ Note: SD-3C, LLC is a limited liability company established by Matsushita Electric Industrial Co. Ltd., SanDisk Corporation and Toshiba Corporation. *The CRC checksum is computed by using the following formula: CRC Calculation: G( 119 +…+(CIN-LSB)*x M(x)=(MID-MSB)*x CRC[6…0]=Remainder[(M(x)*x ...

Page 18

... Partial blocks for read allowed No Write block misalignment No Read block misalignment No DSR implemented --- Reserved 2 GB Device size 1 GB 512 MB According to card Max. read current @VDD min. performance According to card Max. read current @VDD max. 18 iNAND Interface Description SanDisk iNAND Data Sheet --- Description 80-36-00592 ...

Page 19

... Not used, always ―1‖ --- CSD Value Description 2.0 CSD structure --- Reserved 1.5 ms Data read access time-1 0 Data read access time-2 in CLK cycles (NSAC*100) Default 25MHz Max. data transfer rate High-speed 50MHz 010110110101b Card command classes 19 iNAND Interface Description SanDisk iNAND Data Sheet 80-36-00592 ...

Page 20

... Partial blocks for write allowed --- Reserved 0 File format group Has been copied Copy flag (OTP) Not protected Permanent write protection No protected Temporary write protection HD w/partition File format --- Reserved CRC7 CRC Not used, always ―1‖ --- 20 iNAND Interface Description SanDisk iNAND Data Sheet 80-36-00592 ...

Page 21

... SD Card Configuration Register The SD Card Configuration Register (SCR addition to the CSD Register. The SCR provides information about special features in SanDisk iNAND. For more information, refer to Section 5.6 in the SDA Physical Layer Specification, Version 2.00. 3.5.8. SD Card Registers in SPI Mode All registers are accessible in SPI Mode ...

Page 22

... See Section 4.6 of the SDA Physical Layer Specification, Version 2.00. 4.3.6. Commands See Section 4.7 of the SDA Physical Layer Specification, Version 2.00 for detailed information about iNAND commands. © 2007 SanDisk Corporation D ESCRIPTION frequency range. This section contains information PP 22 iNAND Protocol Description SanDisk iNAND Data Sheet 80-36-00592 ...

Page 23

... The speed class specification classifies performance by speed class number and offers the method to calculate performance. For more information, refer to Section 4.13 of the SDA Physical Layer Specification, Version 2.00. 4.3.10. Erase Timeout Calculation See Section 4.14 of the SDA Physical Layer Specification, Version 2.00. © 2007 SanDisk Corporation iNAND Protocol Description SanDisk iNAND Data Sheet 23 80-36-00592 ...

Page 24

... Rev. 1 PPENDIX OWER 5.1. SanDisk iNAND Power Domains SanDisk iNAND has three power domains assigned to VDDH, VDDF, and CREG as shown in Table 14. Pin 3 VDDH VDDF CREG 5.2. Capacitor Connection Guidelines 5.2.1. CREG Connections The CREG (K2) ball must only be connected to an external capacitor that is connected to VSS. This signal may not be left floating. The capacitor’ ...

Page 25

... Rev. 1.2 SanDisk recommends providing separate bypass capacitors for each power domain as shown in Figure 7. Note: Signal routing in the diagram is for illustration purposes only and the final routing depends on your PCB layout. Also, for clarity, the diagram does not show the VSS connection. All balls marked VSS should be connected to a ground (GND) plane ...

Page 26

... SDIN2B2-4G SDIN2B2-8G Note: If parts will be shipped by tape/reel, add “T” to the end of the part number. For example, SDIN2B2-8G would become SDIN2B2-8G- megabyte (MB million bytes; 1 gigabyte (GB billion bytes. Some of the listed capacity is used for formatting and other functions, and thus is not available for data storage. ...

Page 27

... SanDisk shall not be liable for any loss, injury or damage caused by use of the Products in any of the following applications:  ...

Page 28

... Rev. 1 ONTACT S USA SanDisk Corporation, Corporate Headquarters. 601 McCarthy Blvd Milpitas, CA 95035 Phone: +1-408-801-1000 Fax: +1-408-801-8657 Japan SanDisk Japan Inc. Asahi Seimei Gotanda Bldg., 3F 5-25-16 Higashi-Gotanda Shinagawa-ku Tokyo, 141-0022 Phone: +81-3-5423-8101 Fax: +81-3-5423-8102 Taiwan SanDisk Asia Ltd No. 6, Sec. 3 Minquan East Road ...

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