EESX1081 Omron, EESX1081 Datasheet
EESX1081
Manufacturer Part Number
EESX1081
Description
OPTO SWITCH, TRANSMISSIVE
Manufacturer
Omron
Type
Transmissiver
Specifications of EESX1081
Number Of Elements
1
Output Device
Phototransistor
Gap Width
5mm
Slit Width
0.5mm
Reverse Breakdown Voltage
4V
Collector-emitter Voltage
30V
Forward Current
50mA
Collector Current (dc) (max)
20mA
Power Dissipation
100mW
Fall Time
4000ns
Rise Time
4000ns
Pin Count
4
Mounting
Through Hole
Operating Temp Range
-25C to 85C
Operating Temperature Classification
Commercial
Svhc
No SVHC (15-Dec-2010)
Operating Temperature Range
-25°C To +85°C
Output Type
Phototransistor
External Depth
10mm
External Length / Height
13mm
External Width
5mm
Input Current
50mA
No. Of Input
RoHS Compliant
Lead Free Status / RoHS Status
Compliant
■ Dimensions
Note: All units are in millimeters unless otherwise indicated.
■ Electrical and Optical Characteristics (Ta = 25 C)
50
0.5 0.1
8.5 0.1
Emitter
Detector
Rising time
Falling time
K
A
A
K
C
E
Terminal No.
Photomicrosensor (Transmissive)
EE-SX1081
Cross section BB
Internal Circuit
Be sure to read Precautions on page 25.
5+0.1
Two, C1 0.3
EE-SX1081
Four,
0.5 0.1
Forward voltage
Reverse current
Peak emission wavelength
Light current
Dark current
Leakage current
Collector–Emitter saturated volt-
age
Peak spectral sensitivity wave-
length
Anode
Cathode
Collector
Emitter
Name
10 0.2
6.2 0.5
C
E
Item
7.5 0.2
Unless otherwise specified, the
tolerances are as shown below.
3 mm max.
3
6
10
18
Dimensions
mm
mm
mm
mm
Photomicrosensor (Transmissive)
Four, C0.3
13.7 0.3
(10.5)
6
10
18
30
Four, 0.25 0.1
2.5 0.2
Tolerance
0.3
0.375
0.45
0.55
0.65
(Optical axis)
V
I
I
I
I
V
tr
tf
6.5 0.1
R
L
D
LEAK
P
P
F
CE
Symbol
(sat)
Cross section AA
1.2 V typ., 1.5 V max.
0.01 A typ., 10 A max.
940 nm typ.
0.5 mA min., 14 mA max.
2 nA typ., 200 nA max.
---
0.1 V typ., 0.4 V max.
850 nm typ.
4 s typ.
4 s typ.
■ Features
• General-purpose model with a 5-mm-wide slot.
• PCB mounting type.
• High resolution with a 0.5-mm-wide aperture.
■ Absolute Maximum Ratings (Ta = 25 C)
Emitter
Detector
Ambient tem-
perature
Soldering temperature
Note: 1. Refer to the temperature rating chart if the ambient temper-
2. The pulse width is 10
3. Complete soldering within 10 seconds.
ature exceeds 25 C.
100 Hz.
Value
Item
Forward current
Pulse forward cur-
rent
Reverse voltage
Collector–Emitter
voltage
Emitter–Collector
voltage
Collector current
Collector dissipa-
tion
Operating
Storage
I
V
I
I
V
---
I
V
V
V
F
F
F
F
R
CE
CE
CC
CC
= 30 mA
= 20 mA
= 20 mA, V
= 20 mA, I
s maximum with a frequency of
= 4 V
= 10 V, 0 lx
= 10 V
= 5 V, R
= 5 V, R
I
I
V
V
V
I
P
Topr
Tstg
Tsol
F
FP
C
Symbol
R
CEO
ECO
C
L
L
L
Condition
CE
= 0.1 mA
= 100
= 100
= 10 V
50 mA
(see note 1)
1 A
(see note 2)
4 V
30 V
---
20 mA
100 mW
(see note 1)
–25 C to 85 C
–30 C to 100 C
260 C
(see note 3)
, I
, I
Rated value
L
L
= 5 mA
= 5 mA
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EESX1081 Summary of contents
Page 1
Photomicrosensor (Transmissive) EE-SX1081 Be sure to read Precautions on page 25. ■ Dimensions Note: All units are in millimeters unless otherwise indicated. Four, C0.3 13.7 0.3 5+0.1 Two, C1 0.3 0.5 0.1 7.5 0.2 10 0.2 8.5 0.1 6.2 0.5 ...
Page 2
Engineering Data Forward Current vs. Collector Dissipation Temperature Rating Ambient temperature Light Current vs. Collector Emitter Voltage Characteristics (Typical ...