UM9607 MICROSEMI, UM9607 Datasheet - Page 9

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UM9607

Manufacturer Part Number
UM9607
Description
Manufacturer
MICROSEMI
Type
Switchr
Datasheet

Specifications of UM9607

Configuration
Single
Power Dissipation
500mW
Operating Temperature Classification
Military
Reverse Voltage
100V
Operating Temperature (min)
-65C
Pin Count
2
Applications Frequency Range
UHF/SHF
Lead Free Status / RoHS Status
Not Compliant
Microwave Characterization
characterized as shunt switch elements at frequencies to 4 GHz
in microstrip circuits. Performance curves are given which
demonstrate switch performance in 0.025” (.635mm) alumina
microstrip.
biased microstrip circuits in which a UM9601 diode was
installed. Each circuit consisted of a 1 inch length of 50 Ohm
nominal impedance 0.025” (.635mm) thick alumina microstrip
and two SMA connectors. The data shown include the board
and connector loss. Measurements performed using 00.050”
(1.27mm) alumina substrates show similar performance at
frequencies to1.5 GHz
Copyright  2005
Rev. 0, 2006-01-17
The UM9601-UM9608 series has been designed and
The performance data were derived by evaluating externally
Microsemi
FOR MICROSTRIP 900 MHz ANTENNNA SWITCHES
require multi-throw switches. It is important to recognize that a
multi-throw switch will have 6dB higher isolation than
indicated for SPST switches. Also, a multi-throw switch using
shunt mounted PIN diodes require the diodes be placed a
quarter-wavelength from the common port.
achieved by using 2 shunt PIN diodes in each arm spaced a
quarter-wavelength from each other. In this case the isolation of
each section will be twice the dB value of the switch. The
insertion loss due to the diodes should be less than twice the
insertion loss of an SPST section due to the transforming effect
of the quarter-wave line on the capacitance of a single diode.
C
A further improvement in switch performance may be
These circuits simulate SPST switches. Many designs
AND MICROWAVE APPLICATIONS
O S
UM9601 – UM9608
O
S
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