IXGH 28N120BD1SN IXYS, IXGH 28N120BD1SN Datasheet - Page 6

• Manufacturer Part Number: IXGH 28N120BD1SN
• Manufacturer: IXYS

Specifications of IXGH 28N120BD1SN

• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 50A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247AD
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Compliant

Fig. 18. Forward current I
Fig. 21. Dynamic parameters Q
Fig. 24. Transient thermal resistance junction to case
IXYS reserves the right to change limits, test conditions and dimensions.
Z
I
0.001
F
K
thJC
0.01
K/W
f
2.0
1.5
1.0
0.5
0.0
0.1
0.00001
30
25
20
15
10
10
A
5
0
1
0
0
T
T
versus T
VJ
VJ
=150°C
=100°C
1
40
I
RM
Q
r
VJ
0.0001
2
80
F
T
versus V
3
VJ
T
V
120
VJ
F
= 25°C
r
, I
°C
RM
4
0.001
F
V
160
Q
t
rr
r
2000
1500
1000
Fig. 19. Reverse recovery charge Q
Fig. 22. Recovery time t
150
140
130
120
110
100
500
nC
ns
90
0
100
0.01
0
T
V
VJ
R
= 100°C
= 600V
versus -di
200
I
I
I
F
F
F
= 20A
= 10A
= 5A
400
F
/dt
I
I
I
0.1
F
F
F
= 20A
= 10A
= 5A
-di
600
rr
F
-di
T
V
/dt
versus -di
VJ
R
t
F
= 100°C
= 600V
/dt
A/μs
s
800
A/μs
DSEP 8-12A
1000
1000
F
r
/dt
1
V
I
RM
FR
Fig. 20. Peak reverse current I
120
Constants for Z
Fig. 23. Peak forward voltage V
40
30
20
10
80
40
A
V
0
0
1
2
3
i
0
0
T
V
t
t
VJ
R
I
I
I
fr
fr
F
F
F
= 100°C
= 600V
= 20A
= 10A
= 5A
versus di
200
versus -di
200
R
1.449
0.558
0.493
IXGH28N120BD1
IXGT28N120BD1
thi
400
400
thJC
(K/W)
F
/dt
calculation:
F
/dt
600
600
di
-di
T
I
F
F
V
VJ
/dt
F
FR
IXYS REF: G_28N120B(5Z)4-21-04-A
/dt
t
0.0052
0.0003
0.017
= 100°C
= 10A
i
A/μs
A/μs
800
800
(s)
RM
FR
1000
1000
and
μs
1.2
0.8
0.4
0.0
t
fr