Features
•
Epitaxial Planar Die Construction
•
Complementary NPN Types Available (MMBTA05 /
MMBTA06)
•
Ideal for Low Power Amplification and Switching
•
Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 3 and 4)
•
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
•
Case: SOT-23
•
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
•
Moisture Sensitivity: Level 1 per J-STD-020d
•
Terminal Connections: See Diagram
•
Terminals: Solderable per MIL-STD-202, Method 208
•
Lead Free Plating (Matte Tin Finish annealed over Alloy
42 leadframe).
•
MMBTA55 Marking (See Page 3): K2H, K2G
•
MMBTA56 Marking (See Page 3): K2G
•
Ordering Information: See Page 3
•
Weight: 0.008 grams (approximate)
Maximum Ratings
@T
= 25°C unless otherwise specified
A
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Electrical Characteristics
@T
Characteristic
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
ON CHARACTERISTICS (Note 2)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration pulse test used to minimize self-heating effect.
3. No purposefully added lead. Halogen and Antimony Free.
4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code
V9 are built with Non-Green Molding Compound and may contain Halogens or Sb
DS30054 Rev. 11 - 2
MMBTA55 / MMBTA56
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
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A
C
B C
B
TOP VIEW
E
D
E
G
H
K
J
L
C
B
E
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
d
R
θ JA
T
, T
j
STG
= 25°C unless otherwise specified
A
Symbol
Min
MMBTA55
-60
V
(BR)CBO
MMBTA56
-80
MMBTA55
-60
V
(BR)CEO
MMBTA56
-80
V
-4.0
(BR)EBO
MMBTA55
⎯
I
CBO
MMBTA56
MMBTA55
⎯
I
CEX
MMBTA56
100
h
FE
⎯
V
CE(SAT)
⎯
V
BE(SAT)
50
f
T
O
Fire Retardants.
2
3
1 of 3
www.diodes.com
SOT-23
Dim
Min
A
0.37
B
1.20
C
2.30
D
0.89
E
0.45
G
1.78
M
H
2.80
J
0.013
K
0.903
L
0.45
M
0.085
α
0°
All Dimensions in mm
MMBTA55
MMBTA56
Unit
-60
-80
-60
-80
-4.0
-500
mA
300
mW
°C/W
417
-55 to +150
Max
Unit
Test Condition
⎯
V
I
= -100μA, I
= 0
C
E
⎯
V
I
= -1.0mA, I
= 0
C
B
⎯
V
I
= -100μA, I
= 0
E
C
V
= -60V, I
= 0
CB
E
-100
nA
V
= -80V, I
= 0
CB
E
V
= -60V, I
= 0V
CE
BO
-100
nA
V
= -80V, I
= 0V
CE
BO
I
= -10mA, V
= -1.0V
⎯
⎯
C
CE
I
= -100mA, V
= -1.0V
C
CE
-0.25
V
I
= -100mA, I
= -10mA
C
B
-1.2
V
I
= -100mA, V
= -1.0V
C
CE
V
= -1.0V, I
= -100mA,
⎯
CE
C
MHz
f = 100MHz
MMBTA55 / MMBTA56
© Diodes Incorporated
Max
0.51
1.40
2.50
1.03
0.60
2.05
3.00
0.10
1.10
0.61
0.180
8°
V
V
V
°C