SI8610BD-B-IS Silicon Laboratories Inc, SI8610BD-B-IS Datasheet - Page 15

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SI8610BD-B-IS

Manufacturer Part Number
SI8610BD-B-IS
Description
IC ISOLATOR 1CH 5KV 16-SOIC
Manufacturer
Silicon Laboratories Inc
Datasheets

Specifications of SI8610BD-B-IS

Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
336-2057-5
Table 7. IEC 60664-1 (VDE 0844 Part 2) Ratings
Table 8. IEC 60747-5-2 Insulation Characteristics for Si86xxxx*
Table 9. IEC Safety Limiting Values
Parameter
Basic Isolation Group
Installation Classification
Parameter
Maximum Working Insulation
Voltage
Input to Output Test Voltage
Transient Overvoltage
Pollution Degree
(DIN VDE 0110, Table 1)
Insulation Resistance at T
V
*Note: Maintenance of the safety data is ensured by protective circuits. The Si86xxxx provides a climate classification of
Parameter
Case Temperature
Safety Input, Output,
or Supply Current
Device Power
Dissipation
Notes:
IO
1. Maximum value allowed in the event of a failure; also see the thermal derating curve in Figures 2 and 3.
2. The Si86xx is tested with VDD1 = VDD2 = 5.5 V, TJ = 150 ºC, CL = 15 pF, input a 150 Mbps 50% duty cycle square
= 500 V
40/125/21.
wave.
2
Symbol
S
,
P
T
I
S
S
D
Symbol
Material Group
Rated Mains Voltages < 150 V
Rated Mains Voltages < 300 V
Rated Mains Voltages < 400 V
Rated Mains Voltages < 600 V
V
V
V
V
IORM
I
IOTM
R
PR
= 5.5 V, T
S
JA
1
100 °C (WB SOIC-16),
= 140 °C/W (NB SOIC-8),
Test Condition
(V
Test Conditions
Production Test, t
J
Partial Discharge < 5 pC)
IORM
= 150 °C, T
Rev. 1.3
Test Condition
x 1.875 = V
Method b1
t = 60 sec
A
= 25 °C
m
RMS
RMS
RMS
RMS
PR
= 1 sec,
, 100%
Min Typ
Si8610/20/21/22
NB SOIC-8
SOIC-16
1200
2250
6000
>10
WB
Characteristic
2
SOIC-16
I-IV
I-III
I-II
I-II
I
9
WB
150
220
150
Specification
Max
SOIC-8
1182
6000
>10
630
NB
SOIC-8
2
WB SOIC-16
150
160
150
NB
9
I-IV
I-IV
I-III
I-III
I
Vpeak
Vpeak
Unit
Unit
mW
mA
°C
15

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