SI8641BC-B-IS1 Silicon Laboratories Inc, SI8641BC-B-IS1 Datasheet - Page 11

• Manufacturer Part Number: SI8641BC-B-IS1
• Description: IC ISOLATOR 4CH 3.75V 16-SOIC
• Manufacturer: Silicon Laboratories Inc

Specifications of SI8641BC-B-IS1

• Number Of Channels: 4
• Supply Voltage (max): 3.75 V
• Mounting Style: SMD/SMT
• Package / Case: SOIC-16
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 336-2087-5

Table 4. Electrical Characteristics
(V
Parameter
VDD Undervoltage Threshold
VDD Undervoltage Threshold
VDD Negative-Going Lockout
Hysteresis
Positive-Going Input Threshold
Negative-Going Input Threshold
Input Hysteresis
High Level Input Voltage
Low Level Input Voltage
High Level Output Voltage
Low Level Output Voltage
Input Leakage Current
Output Impedance
Enable Input High Current
Enable Input Low Current
Si8640Bx, Ex, Si8645Bx
V
V
V
V
Si8641Bx, Ex
V
V
V
V
Si8642Bx, Ex
V
V
V
V
DD1
DD1
DD2
DD1
DD2
DD1
DD2
DD1
DD2
DD1
DD2
DD1
DD2
1. The nominal output impedance of an isolator driver channel is approximately 50 , ±40%, which is a combination of the
2. t
3. Start-up time is the time period from the application of power to valid data at the output.
= 2.5 V ±5%, V
value of the on-chip series termination resistor and channel resistance of the output driver FET. When driving loads
where transmission line effects will be a factor, output pins should be appropriately terminated with controlled
impedance PCB traces.
the same supply voltages, load, and ambient temperature.
PSK(P-P)
is the magnitude of the difference in propagation delay times measured between different units operating at
1
DD2
= 2.5 V ±5%, T
DC Supply Current (All inputs 0 V or at supply)
VDDUV+
VDDUV–
VDD
Symbol
A
V
= –40 to 125 ºC)
I
VT+
VT–
V
I
V
V
ENH
V
Z
ENL
HYS
I
OH
OL
L
IH
IL
O
HYS
V
V
V
V
V
V
V
V
V
V
V
V
V
V
Test Condition
All inputs falling
All inputs rising
DD1
DD1
I
I
I
I
I
I
I
I
I
I
I
I
loh = –4 mA
= 0(Bx), 1(Ex)
= 0(Bx), 1(Ex)
= 1(Bx), 0(Ex)
= 1(Bx), 0(Ex)
= 0(Bx), 1(Ex)
= 0(Bx), 1(Ex)
= 1(Bx), 0(Ex)
= 1(Bx), 0(Ex)
= 0(Bx), 1(Ex)
= 0(Bx), 1(Ex)
= 1(Bx), 0(Ex)
= 1(Bx), 0(Ex)
V
V
lol = 4 mA
, V
ENx
ENx
, V
Rev. 1.1
DD2
DD2
= V
= V
falling
rising
IH
IL
V
DD2
V
1.95
1.88
0.38
Min
1.4
1.0
2.0
DD1
50
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
– 0.4
Si8640/41/42/45
,
2.24
2.16
1.67
1.23
0.44
Typ
2.3
0.2
2.0
2.0
1.0
2.4
6.1
2.5
1.4
2.3
5.2
3.6
1.8
1.8
4.4
4.4
70
50
—
—
—
2.375
2.325
Max
0.50
±10
1.9
1.4
0.8
0.4
1.6
3.8
9.2
4.0
2.2
3.7
7.8
5.4
2.9
2.9
6.6
6.6
95
—
—
—
—
—
Unit
mV
mA
mA
mA
µA
µA
µA

V
V
V
V
V
V
V
V
V
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