SI8662EC-B-IS1 Silicon Laboratories Inc, SI8662EC-B-IS1 Datasheet - Page 15

IC ISOLATOR 6CH 3.75KV 16-SOIC

SI8662EC-B-IS1

Manufacturer Part Number
SI8662EC-B-IS1
Description
IC ISOLATOR 6CH 3.75KV 16-SOIC
Manufacturer
Silicon Laboratories Inc
Datasheets

Specifications of SI8662EC-B-IS1

Number Of Channels
6
Supply Voltage (max)
3.75 KV
Mounting Style
SMD/SMT
Package / Case
SOIC-16 Narrow
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
336-2126-5
Table 9. IEC Safety Limiting Values
Table 7. IEC 60664-1 (VDE 0844 Part 2) Ratings
Table 8. IEC 60747-5-2 Insulation Characteristics for Si86xxxx*
Case Temperature
Safety Input, Output,
or Supply Current
Device Power
Dissipation
Notes:
Parameter
Basic Isolation Group
Installation Classification
Parameter
Maximum Working Insulation
Voltage
Input to Output Test Voltage
Transient Overvoltage
Pollution Degree
(DIN VDE 0110, Table 1)
Insulation Resistance at T
V
*Note: Maintenance of the safety data is ensured by protective circuits. The Si86xxxx provides a climate classification of
IO
1. Maximum value allowed in the event of a failure; also see the thermal derating curve in Figures 2 and 3.
2. The Si86xx is tested with VDD1 = VDD2 = 5.5 V, TJ = 150 ºC, CL = 15 pF, input a 150 Mbps 50% duty cycle square
= 500 V
Parameter
40/125/21.
wave.
2
Symbol
S
,
T
P
I
S
S
D
Symbol
V
V
Material Group
Rated Mains Voltages < 150 V
Rated Mains Voltages < 300 V
Rated Mains Voltages < 400 V
Rated Mains Voltages < 600 V
V
IORM
IOTM
R
PR
V
S
I
= 5.5 V, T
1
Test Condition
(NB SOIC-16),
JA
T
A
= 105 °C/W
(V
Production Test, t
= 25 °C
Partial Discharge < 5 pC)
Test Conditions
IORM
J
= 150 °C,
Test Condition
Rev. 1.2
x 1.875 = V
Method b1
t = 60 sec
m
Min
PR
RMS
RMS
RMS
RMS
= 1 sec,
, 100%
Typ
WB SOIC-16 NB SOIC-16
Si8660/61/62/63
SOIC-16
NB SOIC-16
1200
2250
6000
>10
150
220
415
WB
2
Characteristic
I-IV
I-III
I-II
I-II
9
I
Specification
Max
NB SOIC-16
6000
1182
>10
630
150
215
415
2
WB SOIC-16
9
I-IV
I-IV
I-III
I-III
I
Vpeak
Vpeak
Unit
Unit
mW
mA
°C
15

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