SI8661BD-B-IS Silicon Laboratories Inc, SI8661BD-B-IS Datasheet - Page 11

• Manufacturer Part Number: SI8661BD-B-IS
• Description: IC ISOLATOR 6CH 5.0KV 16-SOIC
• Manufacturer: Silicon Laboratories Inc

Specifications of SI8661BD-B-IS

• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 336-2121-5

Table 4. Electrical Characteristics
(V
Parameter
VDD Undervoltage Threshold
VDD Undervoltage Threshold
VDD Negative-Going Lockout
Hysteresis
Positive-Going Input Threshold
Negative-Going Input Threshold
Input Hysteresis
High Level Input Voltage
Low Level Input Voltage
High Level Output Voltage
Low Level Output Voltage
Input Leakage Current
Output Impedance
Si8660Bx, Ex
V
V
V
V
Si8661Bx, Ex
V
V
V
V
Si8662Bx, Ex
V
V
V
V
Si8663Bx, Ex
V
V
V
V
Notes:
DD1
DD1
DD2
DD1
DD2
DD1
DD2
DD1
DD2
DD1
DD2
DD1
DD2
DD1
DD2
DD1
DD2
1. The nominal output impedance of an isolator driver channel is approximately 50 , ±40%, which is a combination of the
2. t
3. Start-up time is the time period from the application of power to valid data at the output.
= 2.5 V ±5%, V
value of the on-chip series termination resistor and channel resistance of the output driver FET. When driving loads
where transmission line effects will be a factor, output pins should be appropriately terminated with controlled
impedance PCB traces.
same supply voltages, load, and ambient temperature.
PSK(P-P)
is the magnitude of the difference in propagation delay times measured between different units operating at the
1
DD2
= 2.5 V ±5%, T
DC Supply Current (All inputs 0 V or at supply)
VDDUV+
VDDUV–
A
VDD
Symbol
= –40 to 125 ºC)
V
VT+
VT–
V
V
V
V
Z
HYS
I
OH
OL
L
IH
IL
O
HYS
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
Test Condition
All inputs falling
All inputs rising
DD1
DD1
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
loh = –4 mA
= 0(Bx), 1(Ex)
= 0(Bx), 1(Ex)
= 1(Bx), 0(Ex)
= 1(Bx), 0(Ex)
= 0(Bx), 1(Ex)
= 0(Bx), 1(Ex)
= 1(Bx), 0(Ex)
= 1(Bx), 0(Ex)
= 0(Bx), 1(Ex)
= 0(Bx), 1(Ex)
= 1(Bx), 0(Ex)
= 1(Bx), 0(Ex)
= 0(Bx), 1(Ex)
= 0(Bx), 1(Ex)
= 1(Bx), 0(Ex)
= 1(Bx), 0(Ex)
lol = 4 mA
, V
, V
Rev. 1.2
DD2
DD2
falling
rising
V
DD1
,V
1.95
1.88
0.38
Min
1.4
1.0
2.0
50
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
DD2
Si8660/61/62/63
– 0.4
2.24
2.16
1.67
1.23
0.44
Typ
2.3
0.2
1.2
3.5
8.8
3.7
1.7
3.4
7.9
4.8
2.2
3.0
7.5
5.6
2.6
2.6
6.5
6.5
70
50
—
—
—
2.375
2.325
Max
0.50
12.3
10.5
11.1
±10
1.9
1.4
0.8
0.4
1.9
5.3
5.6
2.7
5.1
7.2
3.3
4.5
8.4
3.9
3.9
9.1
9.1
95
—
—
—
Unit
mV
mA
mA
mA
mA
µA

V
V
V
V
V
V
V
V
V
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