MC100EP196BMNG ON Semiconductor, MC100EP196BMNG Datasheet
MC100EP196BMNG
Manufacturer Part Number
MC100EP196BMNG
Description
IC PROG DELAY ECL 3.3V 32-QFN
Manufacturer
ON Semiconductor
Series
100EPr
Type
Programmable Delay Chipr
Specifications of MC100EP196BMNG
Input
ECL, LVCMOS, LVTTL
Output
ECL
Frequency - Max
1.2GHz
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
32-TFQFN Exposed Pad
Frequency-max
1.2GHz
No. Of Taps
1024
Delay Time Per Tap
2.2ns
Total Delay Time
12.4ns
Supply Voltage Range
3V To 3.6V
Operating Temperature Range
-40°C To +85°C
Digital Ic Case Style
QFN
No. Of Pins
32
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MC100EP196BMNGOS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MC100EP196BMNG
Manufacturer:
TI
Quantity:
72
IMH20TR1G
Dual Bias Resistor
Transistor
NPN Surface Mount
*Total for both Transistors.
1. Pulse Test: Pulse Width
MAXIMUM RATINGS
January, 2004 − Rev. 0
THERMAL CHARACTERISTICS
Q1 + Q2: NPN
ELECTRICAL CHARACTERISTICS
(T
Collector−Base Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current − Continuous
Power Dissipation*
Junction Temperature
Storage Temperature
Collector−Emitter Breakdown Voltage
(I
Collector−Base Breakdown Voltage
(I
Emitter−Base Breakdown Voltage
(I
Collector−Base Cutoff Current
(V
Emitter−Base Cutoff Current
(V
DC Current Gain (Note 1)
(V
Collector−Emitter Saturation Voltage
(I
Input Resistance
C
C
E
C
Low V
High Current: I
This is a Pb−Free Device
A
Semiconductor Components Industries, LLC, 2004
CB
EB
CE
= 50 mAdc, I
= 1.0 mAdc, I
= 50 mAdc, I
= 50 mAdc, I
= 25 C unless otherwise noted)
= 20 Vdc, I
= 4.0 V, I
= 5.0 Vdc, I
Characteristic
CC
Rating
Characteristic
(sat) 80 mV max at IC/IB = 50 mA/2.5 mA
C
C
E
= 0)
B
E
B
C
= 0)
= 0)
= 2.5 mAdc)
= 0)
= 0)
C
= 50 mAdc)
= 600 mA max
(T
A
= 25 C)
300 ms, D.C.
V
V
V
Symbol
Symbol
(BR)CBO
(BR)CEO
(BR)EBO
T
P
T
I
stg
C
D
J
2%.
V
V
V
Symbol
V
(BR)CEO
(BR)CBO
(BR)EBO
I
I
CE(sat)
h
CBO
EBO
R
FE
1
−55 to +150
Value
Max
600
300
150
5.0
30
15
1.54
Min
100
5.0
15
30
−
−
−
Max
2.86
600
0.5
0.5
80
−
−
−
mAdc
Unit
Unit
Vdc
Vdc
Vdc
mW
C
C
mAdc
mAdc
Unit
Vdc
Vdc
Vdc
mV
kW
−
IMH20TR1G
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
SC−74R
Style 21
318AA
1
Device
Q2
ORDERING INFORMATION
R1
(4)
6
(3)
http://onsemi.com
Package
SC−74R
(2)
SC−74
H20 = Specific Device Code
M
Publication Order Number:
(5)
= Date Code
MARKING
DIAGRAM
3000/Tape & Reel
H20 M
Shipping
IMH20TR1G/D
(6)
(1)
R1
Q
1
†
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MC100EP196BMNG Summary of contents
Page 1
IMH20TR1G Dual Bias Resistor Transistor NPN Surface Mount Low V (sat max at IC/ mA/2 High Current 600 mA max C This is a Pb−Free Device MAXIMUM RATINGS ( ...
Page 2
... Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...