LTC6909HMS#PBF Linear Technology, LTC6909HMS#PBF Datasheet - Page 4

• Manufacturer Part Number: LTC6909HMS#PBF
• Description: IC OSCILLATOR SIL 5.5V 16-MSOP
• Manufacturer: Linear Technology
• Type: Oscillator, Siliconr

Specifications of LTC6909HMS#PBF

• Frequency: 6.67MHz
• Voltage - Supply: 2.7 V ~ 5.5 V
• Current - Supply: 2.4mA
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 16-MSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Count: -

LTC6909
electricAl chArActeristics
Note 4: f
frequency is f
of the PH0, PH1 and PH2 pins as described in the Applications Information
section.
Note 5: Frequency accuracy is defined as the deviation from the f
equation. f
PH = 3, 4, 5, 6, 7 or 8.
Note 6: Guaranteed by 5V test.
Note 7: To conform to the Logic IC Standard, current out of a pin is
defined as a negative value.
Note 8: Output rise and fall times are measured between the 10% and the
90% power supply levels with no output loading. These specifications are
based on characterization.
typicAl perForMAnce chArActeristics
4
1800
1600
1400
1200
1000
800
400
600
200
–1
–2
–3
–4
–5
0
5
4
3
2
1
0
2.7
10k
Frequency Error vs R
Supply Current vs Supply Voltage
MASTER
GUARANTEED MAX
OVER TEMPERATURE
PH = 3, SSFM ENABLED
C
R
GUARANTEED MIN
OVER TEMPERATURE
R
LOAD
MASTER
LOAD
SET
MASTER
= 20k
= 5pF
= 5k
3.2
is the internal master oscillator frequency. The output
R
SET
= 20MHz • 10k/R
SUPPLY VOLTAGE (V)
100k
/PH. The PH value is determined by the connections
= 100k
TYPICAL MAX
TYPICAL MIN
R
3.7
SET
( )
R
SET
R
1M
SET
4.2
SET
SET
, V
= 400k
= 2M
, f
T
+
A
OUT
= 2.7V
= 25°C
4.7
6909 G04
6909 G01
= 20MHz • 10k/(R
10M
3000
2500
2000
1500
1000
500
–1
–2
–3
–4
–5
5
4
3
2
1
0
0
10k
10k
Frequency Error vs R
Supply Current
vs R
TYPICAL MAX
TYPICAL MIN
SET
V
OUT
SET
+
• PH),
V
+
= 2.7V, PH = 8
V
= 5V, PH = 3
+
(SSFM Enabled)
V
= 5V, PH = 8
+
100k
100k
= 2.7V, PH = 3
R
R
SET
SET
GUARANTEED MAX
OVER TEMPERATURE
GUARANTEED MIN
OVER TEMPERATURE
Note 9: Long term drift on silicon oscillators is primarily due to the
movement of ions and impurities within the silicon and is tested at 30°C
under otherwise nominal operating conditions. Long term drift is specified
as ppm/√kHr due to the typically nonlinear nature of the drift. To calculate
drift for a set time period, translate that time into thousands of hours, take
the square root and multiply by the typical drift number. For instance, a
year is 8.77kHr and would yield a drift of 888ppm at 300ppm/√kHr. Drift
without power applied to the device (aging) may be approximated as
1/10th of the drift with power, or 30ppm/√kHr for a 300ppm/√kHr device.
( )
( )
SET
1M
1M
, V
C
LOAD
T
+
A
= 5V
= 25°C
= 5pF
6909 G02
6909 G05
10M
10M
–0.25
–0.50
–0.75
–1.00
3000
2500
2000
1500
1000
1.00
0.75
0.50
0.25
500
0
0
–40
10k
Frequency Error vs Temperature
Supply Current
vs R
V
–20
SET
+
V
= 2.7V, PH = 8
+
V
= 5V, PH = 3
+
V
(SSFM Disabled)
+
= 5V, PH = 8
TEMPERATURE (°C)
= 2.7V, PH = 3
100k
0
R
SET
20
( )
40
1M
TYPICAL MAX
TYPICAL MIN
C
R
LOAD
LOAD
60
= 5pF
= 5k
6909 G03
6909 G06
6909fa
80
10M