MCP4531T-104E/MF Microchip Technology, MCP4531T-104E/MF Datasheet - Page 53

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MCP4531T-104E/MF

Manufacturer Part Number
MCP4531T-104E/MF
Description
IC DGTL POT 100K 128TAPS 8-DFN
Manufacturer
Microchip Technology
Datasheet

Specifications of MCP4531T-104E/MF

Package / Case
8-DFN
Taps
129
Resistance (ohms)
100K
Number Of Circuits
1
Temperature Coefficient
150 ppm/°C Typical
Memory Type
Volatile
Interface
I²C, 2-Wire Serial
Voltage - Supply
1.8 V ~ 5.5 V
Operating Temperature
-40°C ~ 125°C
Mounting Type
Surface Mount
Resistance In Ohms
100K
Number Of Pots
Single
Taps Per Pot
128
Resistance
100 KOhms
Wiper Memory
Volatile
Digital Interface
Serial (2-Wire, I2C)
Operating Supply Voltage
2.5 V, 3.3 V, 5 V
Supply Current
2.5 uA
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Supply Voltage (max)
5.5 V
Supply Voltage (min)
1.8 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
MCP4531T-104E/MFTR
7.0
The MCP4XXX’s I
this section. The I
commands are formatted.
The MCP4XXX supports four basic commands.
Depending on the location accessed determines the
commands that are supported.
For the Volatile Wiper Registers, these commands are:
• Write Data
• Read Data
• Increment Data
• Decrement Data
For the TCON Register, these commands are:
• Write Data
• Read Data
These commands have formats for both a single
command or continuous commands. These commands
are shown in
Each command has two operational states. These
operational states are referred to as:
• Normal Serial Commands
• High-Voltage Serial Commands
TABLE 7-1:
Normal serial commands are those where the HVC pin
is driven to V
mands, the HVC pin is driven to V
there are four possible commands.
Table 7-2
memory location.
Table 7-3
mands and their interaction with other device features.
© 2008 Microchip Technology Inc.
Write Data
Read Data
Increment
Decrement
Note 1:
Operation
Note:
Command
DEVICE COMMANDS
shows an overview of all the device com-
shows the supported commands for each
“n” indicates the number of times the
command operation is to be repeated.
Table
IH
High Voltage commands are supported
for
devices in the family.
Single
Continuous
Single
Random
Continuous
Single
Continuous
Single
Continuous
or V
2
Mode
I
C command formats are specified in
2
2
7-1.
compatibility
C COMMANDS
C protocol does not specify how
IL
. With High-Voltage Serial Com-
Clocks
18n + 11
18n + 11
# of Bit
9n + 11
9n + 11
29
29
48
20
20
with
IHH
(1)
. In each mode,
Both
Volatile Only
Both
Both
Both
Volatile Only
Volatile Only
Volatile Only
Volatile Only
Operates on
Non-Volatile
Non-Volatile
memory
Volatile/
MCP453X/455X/463X/465X
7.1
The MCP4XXX’s Command Byte has three fields: the
Address, the Command Operation, and 2 Data bits,
see
defined (D8).
The device memory is accessed when the Master
sends a proper Command Byte to select the desired
operation. The memory location getting accessed is
contained in the Command Byte’s AD3:AD0 bits. The
action desired is contained in the Command Byte’s
C1:C0 bits, see
desired memory location will be read, written,
Incremented (wiper setting +1) or Decremented (wiper
setting -1). The Increment and Decrement commands
are only valid on the volatile wiper registers.
If the Address bits and Command bits are not a valid
combination, then the MCP4XXX will generate a Not
Acknowledge pulse to indicate the invalid combination.
The I
tion to reset the MCP4XXX’s
D9 and D8 are the most significant bits for the digital
potentiometer’s wiper setting. The 8-bit devices utilize
D8 as their MSb while the 7-bit devices utilize D7 (from
the data byte) as it’s MSb.
FIGURE 7-1:
Figure
2
C Master device must then force a Start Condi-
Command Byte
A A
7-1. Currently only one of the data bits is
Memory Address
D
3
MCP4XXX
A
D
2
Table
COMMAND BYTE
D
A
1
Command Byte Format.
7-1. C1:C0 determines if the
D
A
0
Command Operation bits
C
1
10 = Decrement
11 = Read Data
00 = Write Data
01 = Increment
2
C module.
C
0
D
9
MSbits (Data)
DS22096A-page 53
D
8
A

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