MCP4151-503E/MS Microchip Technology, MCP4151-503E/MS Datasheet - Page 7

• Manufacturer Part Number: MCP4151-503E/MS
• Description: IC POT DGTL SNGL 50K SPI 8MSOP
• Manufacturer: Microchip Technology

Specifications of MCP4151-503E/MS

• Package / Case: 8-MSOP, Micro8™, 8-uMAX, 8-uSOP,
• Taps: 257
• Resistance (ohms): 50K
• Number Of Circuits: 1
• Temperature Coefficient: 150 ppm/°C Typical
• Memory Type: Volatile
• Interface: SPI Serial
• Voltage - Supply: 1.8 V ~ 5.5 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Resistance In Ohms: 50K
• Number Of Pots: Single
• Taps Per Pot: 256
• Resistance: 50 KOhms
• Wiper Memory: Volatile
• Digital Interface: Serial (SPI)
• Operating Supply Voltage: 2.5 V, 3.3 V, 5 V
• Supply Current: 1 mA
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Supply Voltage (max): 5.5 V
• Supply Voltage (min): 1.8 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

AC/DC CHARACTERISTICS (CONTINUED)
© 2008 Microchip Technology Inc.
DC Characteristics
Rheostat Integral
Non-linearity
MCP41X1
(Note 4, Note 8)
MCP4XX2
devices only
(Note 4)
Note 1:
Parameters
2:
3:
4:
5:
6:
7:
8:
9:
10: Supply current is independent of current through the resistor network.
Resistance is defined as the resistance between terminal A to terminal B.
INL and DNL are measured at V
MCP4XX1 only.
MCP4XX2 only, includes V
Resistor terminals A, W and B’s polarity with respect to each other is not restricted.
This specification by design.
Non-linearity is affected by wiper resistance (R
temperature.
The MCP4XX1 is externally connected to match the configurations of the MCP41X2 and MCP42X2, and
then tested.
POR/BOR is not rate dependent.
R-INL
Sym
Standard Operating Conditions (unless otherwise specified)
Operating Temperature
All parameters apply across the specified operating ranges unless noted.
V
Typical specifications represent values for V
DD
-1.125
-1.125
-1.125
-1.125
WZSE
-8.25
Min
-1.5
-6.0
-1.5
-5.5
-4.0
-1.5
-2.0
-1.5
-1.0
-1.5
-0.8
= +2.7V to 5.5V, 5 kΩ, 10 kΩ, 50 kΩ, 100 kΩ devices.
W
and V
with V
+0.25
+0.25
MCP413X/415X/423X/425X
±0.5
+4.5
±0.5
+4.5
±0.5
+2.5
±0.5
+2.5
±0.5
±0.5
±0.5
±0.5
Typ
Section 2.0
Section 2.0
Section 2.0
Section 2.0
Section 2.0
Section 2.0
Section 2.0
Section 2.0
WFSE
+1
+1
A
= V
.
DD
+1.125
+1.125
+1.125
+1.125
W
+8.25
Max
+1.5
+6.0
+1.5
+5.5
+4.0
+1.5
+2.0
+1.5
+1.0
+1.5
+0.8
), which changes significantly over voltage and
and V
–40°C ≤ T
B
= V
Units
LSb
LSb
LSb
LSb
LSb
LSb
LSb
LSb
LSb
LSb
LSb
LSb
LSb
LSb
LSb
LSb
SS
.
A
5 kΩ
10 kΩ
50 kΩ
100 kΩ 8-bit
≤ +125°C (extended)
DD
= 5.5V, T
8-bit
7-bit
8-bit
7-bit
8-bit
7-bit
7-bit
Conditions
A
5.5V, I
3.0V, I
(Note 7)
1.8V
5.5V, I
3.0V, I
(Note 7)
1.8V
5.5V, I
3.0V, I
(Note 7)
1.8V
5.5V, I
3.0V, I
(Note 7)
1.8V
5.5V, I
3.0V, I
(Note 7)
1.8V
5.5V, I
3.0V, I
(Note 7)
1.8V
5.5V, I
3.0V, I
(Note 7)
1.8V
5.5V, I
3.0V, I
(Note 7)
1.8v
= +25°C.
W
W
W
W
W
W
W
W
W
W
W
W
W
W
W
W
DS22060B-page 7
= 900 µA
= 480 µA
= 900 µA
= 480 µA
= 450 µA
= 240 µA
= 450 µA
= 240 µA
= 90 µA
= 48 µA
= 90 µA
= 48 µA
= 45 µA
= 24 µA
= 45 µA
= 24 µA