MCP14E8-E/SN Microchip Technology, MCP14E8-E/SN Datasheet

MCP14E8-E/SN

Manufacturer Part Number

MCP14E8-E/SN

Description

3A MOSFET Driver 8 SOIC 3.90mm (.150") TUBE

Manufacturer

Microchip Technology

Datasheet

1.MCP14E8-ESN.pdf (30 pages)

Specifications of MCP14E8-E/SN

Device Type

MOSFET

Module Configuration

Low Side

Peak Output Current

Output Resistance

2.8ohm

Input Delay

45ns

Output Delay

45ns

Supply Voltage Range

4.5V To 18V

Driver Case Style

SOIC

Rohs Compliant

Yes

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MCP14E8-E/SN

Manufacturer:

MICROCHIP

Quantity:

12 000

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Features

• High Peak Output Current: 2.0A (typical)

• Independent Enable Function for Each Driver

• Wide Input Supply Voltage Operating Range:

• Low Shoot-Through/Cross-Conduction Current in

• High Capacitive Load Drive Capability:

• Short Delay Times: 45 ns (typical)

• Low Supply Current:

• Latch-up Protected: Passed JEDEC JESD78A

• Logic Input will Withstand Negative Swing,

• Space-Saving Packages:

Applications

• Switch Mode Power Supplies

• Pulse Transformer Drive

• Line Drivers

• Motor and Solenoid Drive

Output

- 4.5V to 18V

Output Stage

- t

- With Logic ‘1’ Input/Enable – 1 mA (typical)

- With Logic ‘0’ Input/Enable – 300 µA (typical)

up to 5V

- 8-Lead SOIC, PDIP, 6x5 DFN

: 15 ns with 1000 pF load (typical)

: 12 ns with 1000 pF load (typical)

2.0A Dual High-Speed Power MOSFET Driver With Enable

MCP14E6/7/8

General Description

The MCP14E6/7/8 devices are high-speed MOSFET

drivers, capable of providing 2.0A of peak current. The

dual inverting, dual non-inverting and complementary

outputs are directly controlled from either TTL or

CMOS (3V to 18V). These devices also feature low

shoot-through

propagation delays, which make them ideal for high

switching frequency applications.

The MCP14E6/7/8 devices operate from a 4.5V to 18V

single power supply and can easily charge and

discharge 1000 pF of MOSFET gate capacitance. They

provide low enough impedances, in both the ON and

OFF states, to ensure the MOSFETs’ intended state

will not be affected, even by large transients.

The additional control of the MCP14E6/7/8 outputs is

allowed by the use of separate enable functions. The

ENB_A and ENB_B pins are active-high and are

internally pulled up to V

for standard operation.

The MCP14E6/7/8 dual output, 2.0A driver family is

offered in both surface-mount and pin-through-hole

packages with a -40

The low thermal resistance of the thermally enhanced

DFN package allows greater power dissipation

capability for driving heavier capacitive or resistive

loads.

These devices are highly latch-up resistant under any

conditions within their power and voltage ratings. They

are not subject to damage when up to 5V of noise

spiking (of either polarity) occurs on the ground pin.

The devices are fully latch-up protected when tested

according to JEDEC JESD78A. All terminals are fully

protected against Electrostatic Discharge (ESD), up to

4 kV (HBM) or 400V (MM).

current,

C to +125

. The pins may be left floating

fast

C temperature rating.

rise/fall

DS25006A-page 1

times

and

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